| Quantum spin Hall state in monolayer 1T'-WTe2 S Tang, C Zhang, D Wong, Z Pedramrazi, HZ Tsai, C Jia, B Moritz, ... Nature Physics 13 (7), 683-687, 2017 | 885 | 2017 |
| Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition S Tang, H Wang, Y Zhang, A Li, H Xie, X Liu, L Liu, T Li, F Huang, X Xie, ... Scientific reports 3 (1), 2666, 2013 | 266 | 2013 |
| Electric-field-tuned topological phase transition in ultrathin Na3Bi JL Collins, A Tadich, W Wu, LC Gomes, JNB Rodrigues, C Liu, ... Nature 564 (7736), 390-394, 2018 | 224 | 2018 |
| Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride S Tang, H Wang, HS Wang, Q Sun, X Zhang, C Cong, H Xie, X Liu, ... Nature communications 6 (1), 6499, 2015 | 223 | 2015 |
| Mobile metallic domain walls in an all-in-all-out magnetic insulator EY Ma, YT Cui, K Ueda, S Tang, K Chen, N Tamura, PM Wu, J Fujioka, ... Science 350 (6260), 538-541, 2015 | 215 | 2015 |
| Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe2 Thin Films Y Zhang, MM Ugeda, C Jin, SF Shi, AJ Bradley, A Martín-Recio, H Ryu, ... Nano letters 16 (4), 2485-2491, 2016 | 208 | 2016 |
| Strong correlations and orbital texture in single-layer 1T-TaSe2 Y Chen, W Ruan, M Wu, S Tang, H Ryu, HZ Tsai, RL Lee, S Kahn, F Liou, ... Nature Physics 16 (2), 218-224, 2020 | 203 | 2020 |
| Observation of topologically protected states at crystalline phase boundaries in single-layer WSe2 MM Ugeda, A Pulkin, S Tang, H Ryu, Q Wu, Y Zhang, D Wong, ... Nature communications 9 (1), 3401, 2018 | 172 | 2018 |
| Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches XXMJ Lingxiu Chen, Li He, Hui Shan Wang, Haomin Wang, Shujie Tang, Chunxiao ... nature communication, 2017 | 157 | 2017 |
| Persistent Charge-Density-Wave Order in Single-Layer TaSe2 H Ryu, Y Chen, H Kim, HZ Tsai, S Tang, J Jiang, F Liou, S Kahn, C Jia, ... Nano letters 18 (2), 689-694, 2018 | 148 | 2018 |
| Evidence for quantum spin liquid behaviour in single-layer 1T-TaSe2 from scanning tunnelling microscopy W Ruan, Y Chen, S Tang, J Hwang, HZ Tsai, RL Lee, M Wu, H Ryu, ... Nature Physics 17 (10), 1154-1161, 2021 | 134 | 2021 |
| Nucleation and growth of single crystal graphene on hexagonal boron nitride S Tang, G Ding, X Xie, J Chen, C Wang, X Ding, F Huang, W Lu, M Jiang Carbon 50 (1), 329-331, 2012 | 120 | 2012 |
| Distinct Electronic Structure for the Extreme Magnetoresistance in YSb ZXS Junfeng He, Chaofan Zhang, Nirmal J Ghimire, Tian Liang, Chunjing Jia ... PRL, 2016 | 102* | 2016 |
| Ubiquitous strong electron–phonon coupling at the interface of FeSe/SrTiO3 DLZS Chaofan Zhang, Zhongkai Liu, Zhuoyu Chen, Yanwu Xie, Ruihua He, Shujie ... Nature communications, 2017 | 79 | 2017 |
| Electronic structure of monolayer 1T′-MoTe2 grown by molecular beam epitaxy S Tang, C Zhang, C Jia, H Ryu, C Hwang, M Hashimoto, D Lu, Z Liu, ... Apl Materials 6 (2), 2018 | 62 | 2018 |
| Layer-by-layer thinning of graphene by plasma irradiation and post-annealing X Yang, S Tang, G Ding, X Xie, M Jiang, F Huang Nanotechnology 23 (2), 025704, 2011 | 61 | 2011 |
| Visualization of multifractal superconductivity in a two-dimensional transition metal dichalcogenide in the weak-disorder regime C Rubio-Verdú, AM Garcı́a-Garcı́a, H Ryu, DJ Choi, J Zaldı́var, S Tang, ... Nano letters 20 (7), 5111-5118, 2020 | 59 | 2020 |
| Manipulating Topological Domain Boundaries in the Single-Layer Quantum Spin Hall Insulator 1T′–WSe2 Z Pedramrazi, C Herbig, A Pulkin, S Tang, M Phillips, D Wong, H Ryu, ... Nano letters 19 (8), 5634-5639, 2019 | 49 | 2019 |
| Electronic Band Structure of In-Plane Ferroelectric van der Waals β′-In2Se3 JL Collins, C Wang, A Tadich, Y Yin, C Zheng, J Hellerstedt, ... ACS Applied Electronic Materials 2 (1), 213-219, 2020 | 47 | 2020 |
| Epitaxial growth and characterization of high quality Bi2O2Se thin films on SrTiO3 substrates by pulsed laser deposition Y Song, Z Li, H Li, S Tang, G Mu, L Xu, W Peng, D Shen, Y Chen, X Xie, ... Nanotechnology 31 (16), 165704, 2020 | 46 | 2020 |
Zhi-xun ShenDepartment of Physics and Applied Physics, Stanford University, Stanford Institute for Materials andPatvirtintas el. paštas stanford.edu