| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 656 | 2019 |
| Lattice instabilities in metallic elements G Grimvall, B Magyari-Köpe, V Ozoliņš, KA Persson Reviews of Modern Physics 84 (2), 945-986, 2012 | 563 | 2012 |
| Achieving direct band gap in germanium through integration of Sn alloying and external strain S Gupta, B Magyari-Köpe, Y Nishi, KC Saraswat Journal of Applied Physics 113 (7), 2013 | 519 | 2013 |
| HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides MJ Mleczko, C Zhang, HR Lee, HH Kuo, B Magyari-Köpe, RG Moore, ... Science advances 3 (8), e1700481, 2017 | 282 | 2017 |
| Electronic correlation effects in reduced rutile within the method SG Park, B Magyari-Köpe, Y Nishi Physical Review B—Condensed Matter and Materials Physics 82 (11), 115109, 2010 | 244 | 2010 |
| Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in for Resistive Switching Memory SG Park, B Magyari-Köpe, Y Nishi IEEE Electron Device Letters 32 (2), 197-199, 2010 | 173 | 2010 |
| Advances in non-volatile memory and storage technology Y Nishi, B Magyari-Kope Woodhead Publishing, 2019 | 151 | 2019 |
| Model of metallic filament formation and rupture in NiO for unipolar switching HD Lee, B Magyari-Köpe, Y Nishi Physical Review B—Condensed Matter and Materials Physics 81 (19), 193202, 2010 | 146 | 2010 |
| GeSn technology: Extending the Ge electronics roadmap S Gupta, R Chen, B Magyari-Kope, H Lin, B Yang, A Nainani, Y Nishi, ... 2011 International Electron Devices Meeting, 16.6. 1-16.6. 4, 2011 | 145 | 2011 |
| ON-OFF switching mechanism of resistive–random–access–memories based on the formation and disruption of oxygen vacancy conducting channels K Kamiya, M Young Yang, SG Park, B Magyari-Köpe, Y Nishi, M Niwa, ... Applied Physics Letters 100 (7), 2012 | 129 | 2012 |
| Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiOand Pr0. 7Ca0. 3MnO3 B Magyari-Köpe, M Tendulkar, SG Park, HD Lee, Y Nishi Nanotechnology 22 (25), 254029, 2011 | 107 | 2011 |
| First principles calculations of oxygen vacancy-ordering effects in resistance change memory materials incorporating binary transition metal oxides B Magyari-Köpe, SG Park, HD Lee, Y Nishi Journal of Materials Science 47, 7498-7514, 2012 | 106 | 2012 |
| Nanoscale (∼10nm) 3D vertical ReRAM and NbO2threshold selector with TiN electrode E Cha, J Woo, D Lee, S Lee, J Song, Y Koo, J Lee, CG Park, MY Yang, ... 2013 IEEE International Electron Devices Meeting, 10.5. 1-10.5. 4, 2013 | 97 | 2013 |
| Low-temperature crystal structure of perovskite: An ab initio total energy study B Magyari-Köpe, L Vitos, G Grimvall, B Johansson, J Kollar Physical Review B 65 (19), 193107, 2002 | 84 | 2002 |
| Self-diffusion rates in Al from combined first-principles and model-potential calculations N Sandberg, B Magyari-Köpe, TR Mattsson Physical review letters 89 (6), 065901, 2002 | 83 | 2002 |
| Theoretical prediction of low-energy crystal structures and hydrogen storage energetics in B Magyari-Köpe, V Ozoliņš, C Wolverton Physical Review B—Condensed Matter and Materials Physics 73 (22), 220101, 2006 | 76 | 2006 |
| Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations L Zhao, S Clima, B Magyari-Köpe, M Jurczak, Y Nishi Applied Physics Letters 107 (1), 2015 | 69 | 2015 |
| A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in Resistive Random Access Memory KH Xue, B Traore, P Blaise, LRC Fonseca, E Vianello, G Molas, ... IEEE Transactions on Electron Devices 61 (5), 1394-1402, 2014 | 68 | 2014 |
| Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories K Kamiya, MY Yang, T Nagata, SG Park, B Magyari-Koepe, T Chikyow, ... Physical Review B—Condensed Matter and Materials Physics 87 (15), 155201, 2013 | 67 | 2013 |
| Elastic anomalies in Ag-Zn alloys B Magyari-Köpe, G Grimvall, L Vitos Physical Review B 66 (6), 064210, 2002 | 66 | 2002 |
