Neophytos Neophytou

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Mark LundstromProfessor of Electrical and Computer Engineering, Purdue UniversityPatvirtintas el. paštas purdue.edu
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityPatvirtintas el. paštas purdue.edu
Mischa ThesbergGlobal TCAD SolutionsPatvirtintas el. paštas globaltcad.com
Hossein KaramitaheriUniversity of KashanPatvirtintas el. paštas kashanu.ac.ir
Dario NarducciDepartment of Material Science, University of Milano BicoccaPatvirtintas el. paštas unimib.it
Samuel FosterValidation Engineer, Offshore Renewable Energy CatapultPatvirtintas el. paštas ore.catapult.org.uk
Dmitri E. NikonovDistinguished Engineer, Kepler ComputingPatvirtintas el. paštas intel.com
Mahdi PourfathTU WIENPatvirtintas el. paštas iue.tuwien.ac.at
Gengchiau LiangNational Yang Ming Chiao Tung UniversityPatvirtintas el. paštas nycu.edu.tw
Vassilios VargiamidisUniversity of WarwickPatvirtintas el. paštas warwick.ac.uk
Abhijeet paulGraduate Student Purdue University, Device Engineer GlobalfoundriesPatvirtintas el. paštas globalfoundries.com
Laura de Sousa OliveiraUniversity of WyomingPatvirtintas el. paštas uwyo.edu
Bruno LorenziResearch fellow @ University of Milano BicoccaPatvirtintas el. paštas unimib.it
Marisol Martin-GonzalezProfessor & Group Leader - Micro & Nanotecnology Institute - IMN-CSICPatvirtintas el. paštas csic.es
Siegfried SelberherrInstitute for Microelectronics, TU WienPatvirtintas el. paštas TUWien.ac.at
Jing GuoProfessor, University of FloridaPatvirtintas el. paštas ufl.edu
rahim faezsharif university of technologyPatvirtintas el. paštas sharif.edu
Dr. Miguel Muñoz Rojo - ERC granteeTenured permanent researcher (CSIC) & Associate Prof. (University of Twente)Patvirtintas el. paštas csic.es
Jaime Andres Perez-TabordaUniversidad Nacional de ColombiaPatvirtintas el. paštas unal.edu.co
RASEONG KIMIntel CorporationPatvirtintas el. paštas intel.com

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Neophytos Neophytou

School of Engineering, University of Warwick

Patvirtintas el. paštas warwick.ac.uk - Pagrindinis puslapis

materials engineering nanotechnology


Pavadinimas Rūšiuoti pagal šaltinius Rūšiuoti pagal metus Rūšiuoti pagal pavadinimą	Cituota Cituota	Metai
Thermoelectrics: From history, a window to the future D Beretta, N Neophytou, JM Hodges, MG Kanatzidis, D Narducci, ... Materials Science and Engineering: R: Reports 138, 100501, 2019	546	2019
Performance projections for ballistic graphene nanoribbon field-effect transistors G Liang, N Neophytou, DE Nikonov, MS Lundstrom IEEE Transactions on Electron Devices 54 (4), 677-682, 2007	323	2007
Bandstructure effects in silicon nanowire electron transport N Neophytou, A Paul, MS Lundstrom, G Klimeck IEEE Transactions on Electron Devices 55 (6), 1286-1297, 2008	221	2008
Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si N Neophytou, X Zianni, H Kosina, S Frabboni, B Lorenzi, D Narducci Nanotechnology 24 (20), 205402, 2013	168	2013
Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation G Liang, N Neophytou, MS Lundstrom, DE Nikonov Journal of Applied Physics 102 (5), 2007	159	2007
On the Lorenz number of multiband materials M Thesberg, H Kosina, N Neophytou Physical Review B 95 (12), 125206, 2017	122	2017
Engineering enhanced thermoelectric properties in zigzag graphene nanoribbons H Karamitaheri, N Neophytou, M Pourfath, R Faez, H Kosina Journal of Applied Physics 111 (5), 2012	118	2012
Atomistic simulations of low-field mobility in Si nanowires: Influence of confinement and orientation N Neophytou, H Kosina Physical Review B—Condensed Matter and Materials Physics 84 (8), 085313, 2011	118	2011
Ultra-low thermal conductivities in large-area Si-Ge nanomeshes for thermoelectric applications JA Perez-Taborda, M Muñoz Rojo, J Maiz, N Neophytou, ... Scientific reports 6 (1), 32778, 2016	117	2016
Contact effects in graphene nanoribbon transistors G Liang, N Neophytou, MS Lundstrom, DE Nikonov Nano letters 8 (7), 1819-1824, 2008	100	2008
Effects of confinement and orientation on the thermoelectric power factor of silicon nanowires N Neophytou, H Kosina Physical Review B—Condensed Matter and Materials Physics 83 (24), 245305, 2011	94	2011
A tight-binding study of the ballistic injection velocity for ultrathin-body SOI MOSFETs Y Liu, N Neophytou, T Low, G Klimeck, MS Lundstrom IEEE transactions on electron devices 55 (3), 866-871, 2008	77	2008
Band-structure effects on the performance of III–V ultrathin-body SOI MOSFETs Y Liu, N Neophytou, G Klimeck, MS Lundstrom IEEE transactions on electron devices 55 (5), 1116-1122, 2008	76	2008
Bandstructure effects in silicon nanowire hole transport N Neophytou, A Paul, G Klimeck IEEE Transactions on Nanotechnology 7 (6), 710-719, 2008	67	2008
Optimizing thermoelectric power factor by means of a potential barrier N Neophytou, H Kosina Journal of Applied Physics 114 (4), 2013	64	2013
Influence of defects on nanotube transistor performance N Neophytou, D Kienle, E Polizzi, MP Anantram Applied Physics Letters 88 (24), 2006	63	2006
Band alignment and scattering considerations for enhancing the thermoelectric power factor of complex materials: The case of Co-based half-Heusler alloys C Kumarasinghe, N Neophytou Physical Review B 99 (19), 195202, 2019	59	2019
Thermal conductivity of silicon nanomeshes: Effects of porosity and roughness S Wolf, N Neophytou, H Kosina Journal of Applied Physics 115 (20), 2014	59	2014
Impact of the scattering physics on the power factor of complex thermoelectric materials P Graziosi, C Kumarasinghe, N Neophytou Journal of Applied Physics 126 (15), 2019	58	2019
Performance analysis of 60-nm gate-length III–V InGaAs HEMTs: Simulations versus experiments N Neophytou, T Rakshit, MS Lundstrom IEEE Transactions on Electron Devices 56 (7), 1377-1387, 2009	58	2009

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