| GaN/NbN epitaxial semiconductor/superconductor heterostructures R Yan, G Khalsa, S Vishwanath, Y Han, J Wright, S Rouvimov, DS Katzer, ... Nature 555 (7695), 183-189, 2018 | 167 | 2018 |
| Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates MT Hardy, BP Downey, N Nepal, DF Storm, DS Katzer, DJ Meyer Applied Physics Letters 110 (16), 2017 | 156 | 2017 |
| /InAlN/AlN/GaN MIS-HEMTs With 10.8 Johnson Figure of Merit BP Downey, DJ Meyer, DS Katzer, JA Roussos, M Pan, X Gao IEEE electron device letters 35 (5), 527-529, 2014 | 90 | 2014 |
| Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics VJ Gokhale, BP Downey, DS Katzer, N Nepal, AC Lang, RM Stroud, ... Nature communications 11 (1), 2314, 2020 | 88 | 2020 |
| High electron velocity submicrometer AlN/GaN MOS-HEMTs on freestanding GaN substrates DJ Meyer, DA Deen, DF Storm, MG Ancona, DS Katzer, R Bass, ... IEEE Electron Device Letters 34 (2), 199-201, 2013 | 69 | 2013 |
| Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy MT Hardy, EN Jin, N Nepal, DS Katzer, BP Downey, VJ Gokhale, ... Applied Physics Express 13 (6), 065509, 2020 | 67 | 2020 |
| Epitaxial lift-off and transfer of III-N materials and devices from SiC substrates DJ Meyer, BP Downey, DS Katzer, N Nepal, VD Wheeler, MT Hardy, ... IEEE Transactions on Semiconductor Manufacturing 29 (4), 384-389, 2016 | 58 | 2016 |
| Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates DS Katzer, N Nepal, DJ Meyer, BP Downey, VD Wheeler, DF Storm, ... Applied Physics Express 8 (8), 085501, 2015 | 56 | 2015 |
| Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy N Nepal, DS Katzer, BP Downey, VD Wheeler, LO Nyakiti, DF Storm, ... Journal of Vacuum Science & Technology A 38 (6), 2020 | 53 | 2020 |
| Epitaxial ScAlN etch-stop layers grown by molecular beam epitaxy for selective etching of AlN and GaN MT Hardy, BP Downey, DJ Meyer, N Nepal, DF Storm, DS Katzer IEEE Transactions on Semiconductor Manufacturing 30 (4), 475-479, 2017 | 52 | 2017 |
| Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates DF Storm, MT Hardy, DS Katzer, N Nepal, BP Downey, DJ Meyer, ... Journal of Crystal Growth 456, 121-132, 2016 | 48 | 2016 |
| Large-signal RF performance of nanocrystalline diamond coated AlGaN/GaN high electron mobility transistors DJ Meyer, TI Feygelson, TJ Anderson, JA Roussos, MJ Tadjer, ... IEEE Electron Device Letters 35 (10), 1013-1015, 2014 | 43 | 2014 |
| Compositionally graded III-N HEMTs for improved linearity: A simulation study MG Ancona, JP Calame, DJ Meyer, S Rajan, BP Downey IEEE Transactions on Electron Devices 66 (5), 2151-2157, 2019 | 38 | 2019 |
| Temperature and electric field induced metal-insulator transition in atomic layer deposited VO2 thin films MJ Tadjer, VD Wheeler, BP Downey, ZR Robinson, DJ Meyer, CR Eddy Jr, ... Solid-State Electronics 136, 30-35, 2017 | 35 | 2017 |
| Molecular beam epitaxy of transition metal nitrides for superconducting device applications DS Katzer, N Nepal, MT Hardy, BP Downey, DF Storm, EN Jin, R Yan, ... physica status solidi (a) 217 (3), 1900675, 2020 | 32 | 2020 |
| Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes TA Growden, DF Storm, EM Cornuelle, ER Brown, W Zhang, BP Downey, ... Applied Physics Letters 116 (11), 2020 | 28 | 2020 |
| Characterization of molecular beam epitaxy grown β-Nb2N films and AlN/β-Nb2N heterojunctions on 6H-SiC substrates N Nepal, DS Katzer, DJ Meyer, BP Downey, VD Wheeler, DF Storm, ... Applied Physics Express 9 (2), 021003, 2016 | 25 | 2016 |
| Effect of SiNx gate insulator thickness on electrical properties of SiNx/In0. 17Al0. 83N/AlN/GaN MIS–HEMTs BP Downey, DJ Meyer, DS Katzer, TM Marron, M Pan, X Gao Solid-State Electronics 106, 12-17, 2015 | 25 | 2015 |
| Current-induced degradation of nickel ohmic contacts to SiC BP Downey, JR Flemish, BZ Liu, TE Clark, SE Mohney Journal of electronic materials 38, 563-568, 2009 | 24 | 2009 |
| Epitaxial single-crystal ScAlN on 4H-SiC for high-velocity, low-loss SAW devices VJ Gokhale, BP Downey, MT Hardy, EN Jin, JA Roussos, DJ Meyer 2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems …, 2020 | 22 | 2020 |
David J. MeyerNaval Research LaboratoryPatvirtintas el. paštas nrl.navy.mil
