| Monolithic 3D integration of high endurance multi-bit ferroelectric FET for accelerating compute-in-memory S Dutta, H Ye, W Chakraborty, YC Luo, M San Jose, B Grisafe, A Khanna, ... 2020 IEEE International Electron Devices Meeting (IEDM), 36.4. 1-36.4. 4, 2020 | 120 | 2020 |
| Design of non-volatile capacitive crossbar array for in-memory computing YC Luo, A Lu, J Hur, S Li, S Yu 2021 IEEE International Memory Workshop (IMW), 1-4, 2021 | 49 | 2021 |
| Nonvolatile capacitive crossbar array for in‐memory computing J Hur, YC Luo, A Lu, TH Wang, S Li, AI Khan, S Yu Advanced Intelligent Systems 4 (8), 2100258, 2022 | 45 | 2022 |
| Ferroelectric HfO2-based synaptic devices: recent trends and prospects S Yu, J Hur, YC Luo, W Shim, G Choe, P Wang Semiconductor Science and Technology 36 (10), 104001, 2021 | 40 | 2021 |
| A novel scalable energy-efficient synaptic device: Crossbar ferroelectric semiconductor junction M Si, Y Luo, W Chung, H Bae, D Zheng, J Li, J Qin, G Qiu, S Yu, PD Ye 2019 IEEE International Electron Devices Meeting (IEDM), 6.6. 1-6.6. 4, 2019 | 38 | 2019 |
| Ferroelectric hafnium zirconium oxide compatible with back-end-of-line process J Hur, YC Luo, N Tasneem, AI Khan, S Yu IEEE Transactions on Electron Devices 68 (7), 3176-3180, 2021 | 37 | 2021 |
| Non-volatile, small-signal capacitance in ferroelectric capacitors YC Luo, J Hur, P Wang, AI Khan, S Yu Applied Physics Letters 117 (7), 2020 | 34 | 2020 |
| Characterizing Ferroelectric Properties of Hf0.5Zr0.5O2 From Deep-Cryogenic Temperature (4 K) to 400 K J Hur, YC Luo, Z Wang, S Lombardo, AI Khan, S Yu IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 7 …, 2021 | 27 | 2021 |
| Ferroelectric tunnel junction based crossbar array design for neuro-inspired computing YC Luo, J Hur, S Yu IEEE Transactions on Nanotechnology 20, 243-247, 2021 | 27 | 2021 |
| Tunable non-volatile gate-to-source/drain capacitance of FeFET for capacitive synapse TH Kim, O Phadke, YC Luo, H Mulaosmanovic, J Mueller, S Duenkel, ... IEEE Electron Device Letters 44 (10), 1628-1631, 2023 | 26 | 2023 |
| High-Peformance BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs Enabled by Channel Length Scaling down to 7 nm: Achieving Performance Enhancement with … Z Lin, M Si, YC Luo, X Lyu, A Charnas, Z Chen, Z Yu, W Tsai, PC McIntyre, ... 2021 IEEE International Electron Devices Meeting (IEDM), 17.4. 1-17.4. 4, 2021 | 26 | 2021 |
| Nonvolatile capacitive synapse: device candidates for charge domain compute-in-memory S Yu, YC Luo, TH Kim, O Phadke IEEE Electron Devices Magazine 1 (2), 23-32, 2023 | 23 | 2023 |
| Pulse-based capacitive memory window with high non-destructive read endurance in fully BEOL compatible ferroelectric capacitors S Mukherjee, J Bizindavyi, YC Luo, S Clima, J Read, MI Popovici, Y Xiang, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 13 | 2023 |
| Compute-in-memory: From device innovation to 3D system integration S Yu, W Shim, J Hur, Y Luo, G Choe, W Li, A Lu, X Peng ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021 | 13 | 2021 |
| Design and optimization of non-volatile capacitive crossbar array for in-memory computing YC Luo, A Lu, J Hur, S Li, S Yu IEEE Transactions on Circuits and Systems II: Express Briefs 69 (3), 784-788, 2021 | 10 | 2021 |
| Ferroelectric tunnel junction optimization by plasma-enhanced atomic layer deposition J Hur, YC Luo, P Wang, N Tasneem, AI Khan, S Yu 2020 IEEE Silicon Nanoelectronics Workshop (SNW), 11-12, 2020 | 10 | 2020 |
| 3-D heterogeneous integration of RRAM-based compute-in-memory: Impact of integration parameters on inference accuracy A Kaul, Y Luo, X Peng, M Manley, YC Luo, S Yu, MS Bakir IEEE Transactions on Electron Devices 70 (2), 485-492, 2022 | 9 | 2022 |
| A technology path for scaling embedded FeRAM to 28 nm and beyond with 2T1C structure YC Luo, J Hur, Z Wang, W Shim, AI Khan, S Yu IEEE Transactions on Electron Devices 69 (1), 109-114, 2021 | 9 | 2021 |
| Scalable in-memory clustered annealer with temporal noise of charge trap transistor for large scale travelling salesman problems A Lu, J Hur, YC Luo, H Li, DE Nikonov, IA Young, YK Choi, S Yu IEEE Journal on Emerging and Selected Topics in Circuits and Systems 13 (1 …, 2023 | 8 | 2023 |
| A ferroelectric-based volatile/non-volatile dual-mode buffer memory for deep neural network accelerators Y Luo, YC Luo, S Yu IEEE Transactions on Computers 71 (9), 2088-2101, 2021 | 8 | 2021 |