Optical, structural and electrical properties of device-quality hydrogenated amorphous silicon-nitrogen films deposited by plasma-enhanced chemical vapour deposition F Giorgis, F Giuliani, CF Pirri, E Tresso, C Summonte, R Rizzoli, R Galloni, ... Philosophical Magazine B 77 (4), 925-944, 1998 | 109 | 1998 |
Optoelectronic properties, structure and composition of -SiC:H films grown in undiluted and diluted silane-methane plasma A Desalvo, F Giorgis, CF Pirri, E Tresso, P Rava, R Galloni, R Rizzoli, ... Journal of applied physics 81 (12), 7973-7980, 1997 | 71 | 1997 |
Wide band-gap silicon-carbon alloys deposited by very high frequency plasma enhanced chemical vapor deposition C Summonte, R Rizzoli, M Bianconi, A Desalvo, D Iencinella, F Giorgis Journal of applied physics 96 (7), 3987-3997, 2004 | 60 | 2004 |
A dielectric calculation of energy loss to valence electrons of channelled protons in silicon A Desalvo, R Rosa Journal of Physics C: Solid State Physics 10 (10), 1595, 1977 | 56 | 1977 |
Homojunction and heterojunction silicon solar cells deposited by low temperature–high frequency plasma enhanced chemical vapour deposition J Plá, E Centurioni, C Summonte, R Rizzoli, A Migliori, A Desalvo, ... Thin Solid Films 405 (1-2), 248-255, 2002 | 41 | 2002 |
Silicon nanocrystals in carbide matrix C Summonte, M Allegrezza, M Bellettato, F Liscio, M Canino, A Desalvo, ... Solar energy materials and solar cells 128, 138-149, 2014 | 40 | 2014 |
TMAH-textured, a-Si/c-Si, heterojunction solar cells with 10% reflectance M Rosa, M Allegrezza, M Canino, C Summonte, A Desalvo Solar Energy Materials and Solar Cells 95 (11), 2987-2993, 2011 | 39 | 2011 |
Monte Carlo simulation of elastic and inelastic scattering of electrons in thin films. I. Valence electron losses A Desalvo, A Parisini, R Rosa Journal of Physics D: Applied Physics 17 (12), 2455, 1984 | 33 | 1984 |
A dielectric calculation of energy loss to valence electrons under channeling conditions F Bonsignori, A Desalvo Journal of Physics and Chemistry of Solids 31 (10), 2191-2198, 1970 | 33 | 1970 |
Axial-to planar-channeling transition G Della Mea, AV Drigo, SL Russo, P Mazzoldi, GG Bentini, A Desalvo, ... Physical Review B 7 (9), 4029, 1973 | 32 | 1973 |
Atomic collisions in solids G Della Mea, AV Drigo, SL Russo, P Mazzoldi, S Yamaguchi, GG Bentini, ... Plenum, New York, 1975 | 29* | 1975 |
Monte Carlo simulation of elastic and inelastic scattering of electrons in thin films. II. Core electron losses A Desalvo, R Rosa Journal of Physics D: Applied Physics 20 (6), 790, 1987 | 26 | 1987 |
Monte Carlo calculations on spatial distribution of implanted ions in silicon A Desalvo, R Rosa Radiation Effects 31 (1), 41-45, 1976 | 26 | 1976 |
Computer evaluation of primary deposited energy profiles in ion‐implanted silicon under channeling conditions A Desalvo, R Rosa, F Zignani Journal of Applied Physics 43 (9), 3755-3760, 1972 | 26 | 1972 |
A dielectric approach to electronic energy loss in real solids under channeling conditions F Bonsignori, A Desalvo Lettere al Nuovo Cimento (1969-1970) 1 (12), 589-591, 1969 | 26 | 1969 |
Boron doping of silicon rich carbides: Electrical properties C Summonte, M Canino, M Allegrezza, M Bellettato, A Desalvo, R Shukla, ... Materials Science and Engineering: B 178 (9), 551-558, 2013 | 25 | 2013 |
From the chemical constant to quantum statistics: A thermodynamic route to quantum mechanics A Desalvo LS Olschki, 1993 | 24 | 1993 |
Ultrathin μc-Si films deposited by PECVD R Rizzoli, C Summonte, J Plá, E Centurioni, G Ruani, A Desalvo, ... Thin Solid Films 383 (1-2), 7-10, 2001 | 23 | 2001 |
Plasma-enhanced chemical vapour deposition of microcrystalline silicon: on the dynamics of the amorphous-microcrystalline interface by optical methods C Summonte, R Rizzoli, A Desalvo, F Zignani, E Centurioni, R Pinghini, ... Philosophical Magazine B 80 (4), 459-473, 2000 | 23 | 2000 |
Electrical conductivity of high-purity zinc A Desalvo, P Gondi, FA Levi, F Zignani Il Nuovo Cimento (1955-1965) 31, 904-913, 1964 | 21 | 1964 |