| Smooth etching of single crystal 6H‐SiC in an electron cyclotron resonance plasma reactor JR Flemish, K Xie, JH Zhao Applied physics letters 64 (17), 2315-2317, 1994 | 81 | 1994 |
| High etch rates of SiC in magnetron enhanced SF6 plasmas GF McLane, JR Flemish Applied physics letters 68 (26), 3755-3757, 1996 | 76 | 1996 |
| Low damage and residue‐free dry etching of 6H–SiC using electron cyclotron resonance plasma K Xie, JR Flemish, JH Zhao, WR Buchwald, L Casas Applied physics letters 67 (3), 368-370, 1995 | 67 | 1995 |
| A high-current and high-temperature 6H-SiC thyristor K Xie, JH Zhao, JR Flemish, T Burke, WR Buchwald, G Lorenzo, H Singh IEEE Electron Device Letters 17 (3), 142-144, 1996 | 63 | 1996 |
| Profile and morphology control during etching of SiC using electron cyclotron resonant plasmas JR Flemish, K Xie Journal of the Electrochemical Society 143 (8), 2620, 1996 | 58 | 1996 |
| Low hydrogen content silicon nitride films from electron cyclotron resonance plasmas JR Flemish, RL Pfeffer Journal of applied physics 74 (5), 3277-3281, 1993 | 52 | 1993 |
| Selective wet etching of GaInP, GaAs, and InP in solutions of HCl, CH 3 COOH, and H 2 O 2 JR Flemish, KA Jones Journal of The Electrochemical Society 140 (3), 844, 1993 | 46 | 1993 |
| Phosphorus incorporation in plasma deposited diamond films SN Schauer, JR Flemish, R Wittstruck, MI Landstrass, MA Plano Applied physics letters 64 (9), 1094-1096, 1994 | 39 | 1994 |
| Raman study of low growth temperature GaAs TA Gant, H Shen, JR Flemish, L Fotiadis, M Dutta Applied physics letters 60 (12), 1453-1455, 1992 | 38 | 1992 |
| Silicon carbide thyristors for electric guns T Burke, K Xie, H Singh, T Podlesak, J Flemish, J Carter, S Schneider, ... IEEE Transactions on Magnetics 33 (1), 432-437, 1997 | 34 | 1997 |
| Optimization of a photonically controlled microwave switch and attenuator JR Flemish, RL Haupt IEEE transactions on microwave theory and techniques 58 (10), 2582-2588, 2010 | 29 | 2010 |
| Growth and characterization of phosphorus doped diamond films JR Flemish, SN Schauer, R Wittstruck, MI Landstrass, MA Plano Diamond and Related Materials 3 (4-6), 672-676, 1994 | 27 | 1994 |
| Monolithic, segmented light emitting diode array L Gordon, O Shchekin, A Tandon, R Sharma, J Flemish, A Papou, W Yu, ... US Patent 10,957,820, 2021 | 26 | 2021 |
| A new silicon‐based photoconductive microwave switch JR Flemish, HW Kwan, RL Haupt, M Lanagan Microwave and Optical technology letters 51 (1), 248-252, 2009 | 25 | 2009 |
| Current-induced degradation of nickel ohmic contacts to SiC BP Downey, JR Flemish, BZ Liu, TE Clark, SE Mohney Journal of electronic materials 38, 563-568, 2009 | 24 | 2009 |
| Reliability of aluminum-bearing ohmic contacts to SiC under high current density BP Downey, SE Mohney, TE Clark, JR Flemish Microelectronics Reliability 50 (12), 1967-1972, 2010 | 20 | 2010 |
| Determination of the composition of strained InGaAsP layers on InP substrates using photoreflectance and double‐crystal x‐ray diffractometry JR Flemish, H Shen, KA Jones, M Dutta, VS Ban Journal of applied physics 70 (4), 2152-2155, 1991 | 20 | 1991 |
| Adaptive nulling using photoconductive attenuators RL Haupt, J Flemish, D Aten IEEE Transactions on Antennas and Propagation 59 (3), 869-876, 2010 | 18 | 2010 |
| Method and apparatus for growing semiconductor heterostructures KA Jones, JR Flemish, A Tripathi, VS Ban US Patent 5,254,210, 1993 | 18 | 1993 |
| Dry Etching of SiC for Advanced Device Applications JR Flemish, K Xie, GF McLane MRS Online Proceedings Library 421, 153-164, 1996 | 17 | 1996 |
