Straipsniai su viešo pasiekiamumo įpareigojimais - Sayeef SalahuddinSužinokite daugiau
Niekur nepasiekiama: 32
Deterministic switching of ferromagnetism at room temperature using an electric field
JT Heron, JL Bosse, Q He, Y Gao, M Trassin, L Ye, JD Clarkson, C Wang, ...
Nature 516 (7531), 370-373, 2014
Įpareigojimai: US Department of Energy, Government of Spain
The era of hyper-scaling in electronics
S Salahuddin, K Ni, S Datta
Nature electronics 1 (8), 442-450, 2018
Įpareigojimai: US Department of Defense
Analysis and compact modeling of negative capacitance transistor with high ON-current and negative output differential resistance—Part II: Model validation
G Pahwa, T Dutta, A Agarwal, S Khandelwal, S Salahuddin, C Hu, ...
IEEE Transactions on Electron Devices 63 (12), 4986-4992, 2016
Įpareigojimai: Council of Scientific and Industrial Research, India, Department of Science …
Improved subthreshold swing and short channel effect in FDSOI n-channel negative capacitance field effect transistors
D Kwon, K Chatterjee, AJ Tan, AK Yadav, H Zhou, AB Sachid, R Dos Reis, ...
IEEE Electron Device Letters 39 (2), 300-303, 2017
Įpareigojimai: US Department of Energy
Negative capacitance behavior in a leaky ferroelectric
AI Khan, U Radhakrishna, K Chatterjee, S Salahuddin, DA Antoniadis
IEEE Transactions on Electron Devices 63 (11), 4416-4422, 2016
Įpareigojimai: US National Science Foundation
Power absorption in acoustically driven ferromagnetic resonance
D Labanowski, A Jung, S Salahuddin
Applied Physics Letters 108 (2), 2016
Įpareigojimai: US National Science Foundation
Work function engineering for performance improvement in leaky negative capacitance FETs
AI Khan, U Radhakrishna, S Salahuddin, D Antoniadis
IEEE Electron Device Letters 38 (9), 1335-1338, 2017
Įpareigojimai: US National Science Foundation, US Department of Defense
Experimental Demonstration of a Ferroelectric HfO2-Based Content Addressable Memory Cell
AJ Tan, K Chatterjee, J Zhou, D Kwon, YH Liao, S Cheema, C Hu, ...
IEEE Electron Device Letters 41 (2), 240-243, 2019
Įpareigojimai: US Department of Defense
BSIM compact model of quantum confinement in advanced nanosheet FETs
A Dasgupta, SS Parihar, P Kushwaha, H Agarwal, MY Kao, S Salahuddin, ...
IEEE Transactions on Electron Devices 67 (2), 730-737, 2020
Įpareigojimai: Department of Science & Technology, India
Ultrafast magnetization switching in nanoscale magnetic dots
A El-Ghazaly, B Tran, A Ceballos, CH Lambert, A Pattabi, S Salahuddin, ...
Applied Physics Letters 114 (23), 2019
Įpareigojimai: US National Science Foundation, US Department of Energy
Hot electrons as the dominant source of degradation for sub-5nm HZO FeFETs
AJ Tan, M Pešić, L Larcher, YH Liao, LC Wang, JH Bae, C Hu, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
Įpareigojimai: US Department of Defense
Fast read-after-write and depolarization fields in high endurance n-type ferroelectric FETs
M Hoffmann, AJ Tan, N Shanker, YH Liao, LC Wang, JH Bae, C Hu, ...
IEEE Electron Device Letters 43 (5), 717-720, 2022
Įpareigojimai: US Department of Defense
Flexible spin-orbit torque devices
OJ Lee, L You, J Jang, V Subramanian, S Salahuddin
Applied Physics Letters 107 (25), 2015
Įpareigojimai: US Department of Energy
Surface states in a monolayer MoS2 transistor
Z Lu, O Lee, JC Wong, S Salahuddin
Journal of Materials Research 31 (7), 911-916, 2016
Įpareigojimai: US National Science Foundation
Electric field-induced permittivity enhancement in negative-capacitance FET
YH Liao, D Kwon, S Cheema, N Shanker, AJ Tan, MY Kao, LC Wang, ...
IEEE Transactions on Electron Devices 68 (3), 1346-1351, 2021
Įpareigojimai: US Department of Defense
FeFETs for near-memory and in-memory compute
S Salahuddin, A Tan, S Cheema, N Shanker, M Hoffmann, JH Bae
2021 IEEE International Electron Devices Meeting (IEDM), 19.4. 1-19.4. 4, 2021
Įpareigojimai: US Department of Defense
Enhancement in Capacitance and Transconductance in 90 nm nFETs with HfO2-ZrO2 Superlattice Gate Stack for Energy-efficient Cryo-CMOS
W Li, LC Wang, SS Cheema, N Shanker, C Hu, S Salahuddin
2022 International Electron Devices Meeting (IEDM), 22.3. 1-22.3. 4, 2022
Įpareigojimai: US Department of Defense
CMOS Demonstration of Negative Capacitance HfO2-ZrO2 Superlattice Gate Stack in a Self-Aligned, Replacement Gate Process
N Shanker, M Cook, SS Cheema, W Li, R Rastogi, D Pipitone, C Chen, ...
2022 International Electron Devices Meeting (IEDM), 34.3. 1-34.3. 4, 2022
Įpareigojimai: US Department of Defense
Demonstration of Low EOT Gate Stack and Record Transconductance on nm nFETs Using 1.8 nm Ferroic HfO2-ZrO2 Superlattice
W Li, LC Wang, SS Cheema, N Shanker, JH Park, YH Liao, SL Hsu, ...
2021 IEEE International Electron Devices Meeting (IEDM), 13.6. 1-13.6. 4, 2021
Įpareigojimai: US Department of Defense
Quantitative study of EOT lowering in negative capacitance HfO₂-ZrO₂ superlattice gate stacks
M Hoffmann, SS Cheema, N Shanker, W Li, S Salahuddin
2022 International Electron Devices Meeting (IEDM), 13.2. 1-13.2. 4, 2022
Įpareigojimai: US Department of Defense
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