Axel Hoffmann

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Bruno K MeyerJustus Liebig University GiessenPatvirtintas el. paštas mailbox.tu-berlin.de
juergen christenProfessor of Physics, Magdeburg UniversityPatvirtintas el. paštas ovgu.de
Christian ThomsenTU BerlinPatvirtintas el. paštas tu-berlin.de
Markus R. WagnerPaul-Drude-Institut für FestkörperelektronikPatvirtintas el. paštas pdi-berlin.de
Gordon CallsenUniversity of Bremen, Institute of Solid State PhysicsPatvirtintas el. paštas ifp.uni-bremen.de
Nikolay LedentsovVI Systems GmbHPatvirtintas el. paštas v-i-systems.com
Ronny KirsteResearch associate, NCSUPatvirtintas el. paštas ncsu.edu
Matthew R. PhillipsEmeritus Professor of Applied Physics, University of Technology SydneyPatvirtintas el. paštas uts.edu.au
Sebastian ReparazINSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONAPatvirtintas el. paštas icmab.es
Sergey MaksimenkoBelarusian State University, Research Institute for Nuclear Problems, DirectorPatvirtintas el. paštas bsu.by
Christian NenstielTechnische Universität BerlinPatvirtintas el. paštas physik.tu-berlin.de
Dagmar GerthsenKITPatvirtintas el. paštas kit.edu
Kazumasa HiramatsuMie University, Emeritus ProfessorePatvirtintas el. paštas elec.mie-u.ac.jp
Zlatko SitarKobe Steel Distinguished Professor of Materials Science and Engineerign, North Carolina StatePatvirtintas el. paštas ncsu.edu
Wolfgang GehlhoffProf. Dr., Technische Universität BerlinPatvirtintas el. paštas sol.physik.tu-berlin.de
Dietz NikolausGeorgia State UniversityPatvirtintas el. paštas gsu.edu
Andrei SchliwaPrincipal Scientist @ Technische Universität BerlinPatvirtintas el. paštas tu-berlin.de
Anna RodinaChief Scientist, Ioffe InstitutePatvirtintas el. paštas mail.ioffe.ru
Hiroshi AMANO (天野　浩)Nagoya University (名古屋大学)Patvirtintas el. paštas nuee.nagoya-u.ac.jp
Ramon CollazoProfessor of Materials Science and Engineering, NCSUPatvirtintas el. paštas ncsu.edu

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Axel Hoffmann

Institute of Solid State Physics, Technical University of Berlin

Patvirtintas el. paštas tu-berlin.de - Pagrindinis puslapis

Semiconductor physics Nanostructures Devices


Pavadinimas Rūšiuoti pagal šaltinius Rūšiuoti pagal metus Rūšiuoti pagal pavadinimą	Cituota Cituota	Metai
Bound exciton and donor–acceptor pair recombinations in ZnO BK Meyer, H Alves, DM Hofmann, W Kriegseis, D Forster, F Bertram, ... physica status solidi (b) 241 (2), 231-260, 2004	2029	2004
Zinc Oxide: From Fundamental Properties Towards Novel Applications CF Klingshirn, BK Meyer, A Waag, A Hoffmann, J Geurts Springer, 2010	787	2010
Energy relaxation by multiphonon processes in InAs/GaAs quantum dots R Heitz, M Veit, NN Ledentsov, A Hoffmann, D Bimberg, VM Ustinov, ... Physical Review B 56 (16), 10435, 1997	641	1997
Group III nitride semiconductor compounds: physics and applications Clarendon Press, 1998	571*	1998
Nitrogen-related local vibrational modes in ZnO: N A Kaschner, U Haboeck, M Strassburg, M Strassburg, G Kaczmarczyk, ... Applied Physics Letters 80 (11), 1909-1911, 2002	565	2002
Zone-boundary phonons in hexagonal and cubic GaN H Siegle, G Kaczmarczyk, L Filippidis, AP Litvinchuk, A Hoffmann, ... Physical Review B 55 (11), 7000, 1997	395	1997
Behind the weak excitonic emission of ZnO quantum dots: ZnO/Zn (OH) 2 core-shell structure H Zhou, H Alves, DM Hofmann, W Kriegseis, BK Meyer, G Kaczmarczyk, ... Applied physics letters 80 (2), 210-212, 2002	392	2002
Development of advanced high heat flux and plasma-facing materials C Linsmeier, M Rieth, J Aktaa, T Chikada, A Hoffmann, J Hoffmann, ... Nuclear Fusion 57 (9), 092007, 2017	334	2017
Excited states and energy relaxation in stacked InAs/GaAs quantum dots R Heitz, A Kalburge, Q Xie, M Grundmann, P Chen, A Hoffmann, ... Physical Review B 57 (15), 9050, 1998	323	1998
Properties of the yellow luminescence in undoped GaN epitaxial layers DM Hofmann, D Kovalev, G Steude, BK Meyer, A Hoffmann, L Eckey, ... Phys. Rev. B 72 (23), 16702, 1995	322	1995
Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers MR Wagner, G Callsen, JS Reparaz, JH Schulze, R Kirste, M Cobet, ... Physical Review B—Condensed Matter and Materials Physics 84 (3), 035313, 2011	252	2011
Exciton fine structure in undoped GaN epitaxial films D Volm, K Oettinger, T Streibl, D Kovalev, M Ben-Chorin, J Diener, ... Physical Review B 53 (24), 16543, 1996	250	1996
High Si and Ge n-type doping of GaN doping-Limits and impact on stress S Fritze, A Dadgar, H Witte, M Bügler, A Rohrbeck, J Bläsing, A Hoffmann, ... Applied Physics Letters 100 (12), 2012	243	2012
Semiconductor nanostructures D Bimberg Springer, 2008	237	2008
Existence of a phonon bottleneck for excitons in quantum dots R Heitz, H Born, F Guffarth, O Stier, A Schliwa, A Hoffmann, D Bimberg Physical review b 64 (24), 241305, 2001	232	2001
Free excitons in wurtzite GaN AV Rodina, M Dietrich, A Göldner, L Eckey, A Hoffmann, AL Efros, ... Physical Review B 64 (11), 115204, 2001	222	2001
Quantitative determination of hexagonal minority phase in cubic GaN using Raman spectroscopy H Siegle, L Eckey, A Hoffmann, C Thomsen, BK Meyer, D Schikora, ... Solid State Communications 96 (12), 943-949, 1995	204	1995
Interrelation of structural and electronic properties in quantum dots using an eight-band model M Winkelnkemper, A Schliwa, D Bimberg Physical Review B—Condensed Matter and Materials Physics 74 (15), 155322, 2006	202	2006
Optical properties of the nitrogen acceptor in epitaxial ZnO A Zeuner, H Alves, DM Hofmann, BK Meyer, A Hoffmann, U Haboeck, ... physica status solidi (b) 234 (3), R7-R9, 2002	198	2002
Gain studies of (Cd, Zn) Se quantum islands in a ZnSe matrix M Strassburg, V Kutzer, UW Pohl, A Hoffmann, I Broser, NN Ledentsov, ... Applied physics letters 72 (8), 942-944, 1998	189	1998

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