| Two Magnetic Regimes in Doped ZnO Corresponding to a Dilute Magnetic Semiconductor<? format?> and a Dilute Magnetic Insulator AJ Behan, A Mokhtari, HJ Blythe, D Score, XH Xu, JR Neal, AM Fox, ... Physical review letters 100 (4), 047206, 2008 | 423 | 2008 |
| Morphological properties of AlN piezoelectric thin films deposited by DC reactive magnetron sputtering XH Xu, HS Wu, CJ Zhang, ZH Jin Thin solid films 388 (1-2), 62-67, 2001 | 355 | 2001 |
| Chalcogenide perovskites–an emerging class of ionic semiconductors S Perera, H Hui, C Zhao, H Xue, F Sun, C Deng, N Gross, C Milleville, ... Nano Energy 22, 129-135, 2016 | 272 | 2016 |
| Geometric and energetic aspects of aluminum nitride cages HS Wu, FQ Zhang, XH Xu, CJ Zhang, H Jiao The Journal of Physical Chemistry A 107 (1), 204-209, 2003 | 184 | 2003 |
| Carrier-induced ferromagnetism in n-type ZnMnAlO and ZnCoAlO thin films at room temperature XH Xu, HJ Blythe, M Ziese, AJ Behan, JR Neal, A Mokhtari, RM Ibrahim, ... New Journal of Physics 8 (8), 135, 2006 | 178 | 2006 |
| Residential indoor and outdoor ultrafine particles in Windsor, Ontario J Kearney, L Wallace, M MacNeill, X Xu, K VanRyswyk, H You, R Kulka, ... Atmospheric environment 45 (40), 7583-7593, 2011 | 136 | 2011 |
| Redox gated polymer memristive processing memory unit B Zhang, F Fan, W Xue, G Liu, Y Fu, X Zhuang, XH Xu, J Gu, RW Li, ... Nature communications 10 (1), 736, 2019 | 134 | 2019 |
| Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films J Shang, W Xue, Z Ji, G Liu, X Niu, X Yi, L Pan, Q Zhan, XH Xu, RW Li Nanoscale 9 (21), 7037-7046, 2017 | 132 | 2017 |
| Sequencing bias: comparison of different protocols of microRNA library construction G Tian, XY Yin, H Luo, XH Xu, L Bolund, XQ Zhang BMC biotechnology 10, 1-9, 2010 | 106 | 2010 |
| Roles of Kruppel-associated box (KRAB)-associated co-repressor KAP1 Ser-473 phosphorylation in DNA damage response C Hu, S Zhang, X Gao, X Gao, X Xu, YA Lv, Y Zhang, Z Zhu, C Zhang, Q Li, ... Journal of Biological Chemistry 287 (23), 18937-18952, 2012 | 105 | 2012 |
| High-Temperature Quantum Anomalous Hall Effect in Codoped Topological Insulators S Qi, Z Qiao, X Deng, ED Cubuk, H Chen, W Zhu, E Kaxiras, SB Zhang, ... Physical review letters 117 (5), 056804, 2016 | 98 | 2016 |
| A 1D vanadium dioxide nanochannel constructed via electric‐field‐induced ion transport and its superior metal–insulator transition W Xue, G Liu, Z Zhong, Y Dai, J Shang, Y Liu, H Yang, X Yi, H Tan, L Pan, ... Advanced Materials 29 (39), 1702162, 2017 | 97 | 2017 |
| Role of donor defects in enhancing ferromagnetism of Cu-doped ZnO films XL Li, XH Xu, ZY Quan, JF Guo, HS Wu, GA Gehring Journal of applied physics 105 (10), 2009 | 82 | 2009 |
| Nanometer-thick yttrium iron garnet films with perpendicular anisotropy and low damping J Ding, C Liu, Y Zhang, U Erugu, Z Quan, R Yu, E McCollum, S Mo, ... Physical Review Applied 14 (1), 014017, 2020 | 79 | 2020 |
| Structural and electronic properties of interfaces in graphene and hexagonal boron nitride lateral heterostructures J Zhang, W Xie, X Xu, S Zhang, J Zhao Chemistry of Materials 28 (14), 5022-5028, 2016 | 78 | 2016 |
| Identification of potential regional sources of atmospheric total gaseous mercury in Windsor, Ontario, Canada using hybrid receptor modeling X Xu, US Akhtar Atmospheric Chemistry and Physics 10 (15), 7073-7083, 2010 | 71 | 2010 |
| Magnetic and transport properties of n-type Fe-doped In2O3 ferromagnetic thin films XH Xu, FX Jiang, J Zhang, XC Fan, HS Wu, GA Gehring Applied Physics Letters 94 (21), 2009 | 67 | 2009 |
| Abundant valley-polarized states in two-dimensional ferromagnetic van der Waals heterostructures H Zhang, W Yang, Y Ning, X Xu Physical Review B 101 (20), 205404, 2020 | 65 | 2020 |
| Intrinsic and interfacial effect of electrode metals on the resistive switching behaviors of zinc oxide films WH Xue, W Xiao, J Shang, XX Chen, XJ Zhu, L Pan, HW Tan, WB Zhang, ... Nanotechnology 25 (42), 425204, 2014 | 63 | 2014 |
| FeAu/FePt exchange-spring media fabricated by magnetron sputtering and postannealing F Wang, X Xu, Y Liang, J Zhang, H Wu Applied Physics Letters 95 (2), 2009 | 63 | 2009 |
