Gerard Ghibaudo

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Cristoloveanu, SorinGrenoble INPPatvirtintas el. paštas grenoble-inp.fr
barbara de salvoCEA LETIPatvirtintas el. paštas cea.fr
Babis DimitriadisDepartment of Physics Aristotle University of Thessaloniki, 54124, GreecePatvirtintas el. paštas physics.auth.gr
Frederic BoeufSTMicroelectronicsPatvirtintas el. paštas st.com
Christoforos THEODOROUIMEP-LAHC, Minatec, Grenoble INPPatvirtintas el. paštas minatec.inpg.fr
Sylvain BARRAUDCEA-LETI, Minatec CampusPatvirtintas el. paštas cea.fr
Quentin RafhayUniversité Grenoble AlpesPatvirtintas el. paštas phelma.grenoble-inp.fr
Francois AndrieuCEA LETIPatvirtintas el. paštas cea.fr
Jan A. ChroboczekINPGPatvirtintas el. paštas enserg.fr
ANDREAS TSORMPATZOGLOUDepartment of Informatics and Telecommunications, University of Ioannina, Arta, GreecePatvirtintas el. paštas uoi.gr
Maud VinetQuobly (ex CEA)Patvirtintas el. paštas quobly.io
Yong XuNanjing University of Posts and TelecommunicationsPatvirtintas el. paštas njupt.edu.cn
Dae-Young JeonDepartment of Electrical Engineering, Gyeongsang National University, South KoreaPatvirtintas el. paštas gnu.ac.kr
Dimitrios TassisAristotle University of ThessalonikiPatvirtintas el. paštas auth.gr
elisa vianelloScientist, CEA LetiPatvirtintas el. paštas cea.fr
Thierry BaronCNRS, Université Grenoble AlpesPatvirtintas el. paštas cea.fr
Vincent DelayeCEA, LETI, MINATEC CampusPatvirtintas el. paštas cea.fr
Laurent MONTESGrenoble INP, PHELMA, IMEP-LahcPatvirtintas el. paštas grenoble-inp.fr
Remi CoquandAdvanced devices Engineer, PhDPatvirtintas el. paštas cea.fr
Takeo MinariNational Institute for Materials Science (NIMS)Patvirtintas el. paštas nims.go.jp

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Gerard Ghibaudo

IMEP-LAHC/CROMA, Minatec-INP Grenoble

Patvirtintas el. paštas minatec.inpg.fr - Pagrindinis puslapis

Semiconductor devices


Pavadinimas Rūšiuoti pagal šaltinius Rūšiuoti pagal metus Rūšiuoti pagal pavadinimą	Cituota Cituota	Metai
A new method for the extraction of MOSFET parameters G Ghibaudo Electronics letters 24, 543-544, 1988	983	1988
Improved analysis of low frequency noise in field‐effect MOS transistors G Ghibaudo, O Roux, C Nguyen‐Duc, F Balestra, J Brini physica status solidi (a) 124 (2), 571-581, 1991	868	1991
Review on high-k dielectrics reliability issues G Ribes, J Mitard, M Denais, S Bruyere, F Monsieur, C Parthasarathy, ... IEEE Transactions on Device and materials Reliability 5 (1), 5-19, 2005	678	2005
Electrical noise and RTS fluctuations in advanced CMOS devices G Ghibaudo, T Boutchacha Microelectronics Reliability 42 (4-5), 573-582, 2002	427	2002
A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with gate-all-around or independent gates (Φ-Flash), suitable for full 3D integration A Hubert, E Nowak, K Tachi, V Maffini-Alvaro, C Vizioz, C Arvet, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009	344	2009
Ultimately thin double-gate SOI MOSFETs T Ernst, S Cristoloveanu, G Ghibaudo, T Ouisse, S Horiguchi, Y Ono, ... IEEE transactions on electron devices 50 (3), 830-838, 2003	301	2003
HfO₂-Based OxRAM Devices as Synapses for Convolutional Neural Networks D Garbin, E Vianello, O Bichler, Q Rafhay, C Gamrat, G Ghibaudo, ... IEEE Transactions on Electron Devices 62 (8), 2494-2501, 2015	232	2015
Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors Y Xu, T Minari, K Tsukagoshi, JA Chroboczek, G Ghibaudo Journal of Applied Physics 107 (11), 2010	232	2010
15nm-diameter 3D stacked nanowires with independent gates operation: ΦFET C Dupré, A Hubert, S Becu, M Jublot, V Maffini-Alvaro, C Vizioz, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008	193	2008
Improved split CV method for effective mobility extraction in sub-0.1-μm Si MOSFETs K Romanjek, F Andrieu, T Ernst, G Ghibaudo IEEE Electron Device Letters 25 (8), 583-585, 2004	191	2004
Ionizing radiation induced leakage current on ultra-thin gate oxides A Scarpa, A Paccagnella, F Montera, G Ghibaudo, G Pananakakis, ... IEEE Transactions on Nuclear Science 44 (6), 1818-1825, 1997	188	1997
Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices B De Salvo, G Ghibaudo, G Pananakakis, P Masson, T Baron, N Buffet, ... IEEE Transactions on Electron Devices 48 (8), 1789-1799, 2001	175	2001
Device and circuit cryogenic operation for low temperature electronics F Balestra, G Ghibaudo Kluwer Academic Publishers, 2001	166	2001
Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects S Eminente, S Cristoloveanu, R Clerc, A Ohata, G Ghibaudo Solid-State Electronics 51 (2), 239-244, 2007	163	2007
3DVLSI with CoolCube process: An alternative path to scaling P Batude, C Fenouillet-Beranger, L Pasini, V Lu, F Deprat, L Brunet, ... 2015 Symposium on VLSI Technology (VLSI Technology), T48-T49, 2015	158	2015
A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment F Monsieur, E Vincent, D Roy, S Bruyere, JC Vildeuil, G Pananakakis, ... 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th …, 2002	156	2002
Temperature dependence of the Fowler–Nordheim current in metal‐oxide‐degenerate semiconductor structures G Pananakakis, G Ghibaudo, R Kies, C Papadas Journal of Applied Physics 78 (4), 2635-2641, 1995	149	1995
Unexpected mobility degradation for very short devices: A new challenge for CMOS scaling A Cros, K Romanjek, D Fleury, S Harrison, R Cerutti, P Coronel, ... 2006 International Electron Devices Meeting, 1-4, 2006	147	2006
75 nm damascene metal gate and high-k integration for advanced CMOS devices B Guillaumot, X Garros, F Lime, K Oshima, B Tavel, JA Chroboczek, ... Digest. International Electron Devices Meeting,, 355-358, 2002	147	2002
Dry oxidation of silicon: A new model of growth including relaxation of stress by viscous flow A Fargeix, G Ghibaudo Journal of applied physics 54 (12), 7153-7158, 1983	147	1983

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