Peide Ye

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Gang QiuUniversity of MinnesotaPatvirtintas el. paštas umn.edu
Han LiuApple Inc.Patvirtintas el. paštas apple.com
Adam T. NealAir Force Research LabPatvirtintas el. paštas us.af.mil
Yi XUANUniversity of Pittsburgh, School of MedicinePatvirtintas el. paštas pitt.edu
Xianfan XuPurdue UniversityPatvirtintas el. paštas purdue.edu
Yanqing WuPeking UniversityPatvirtintas el. paštas pku.edu.cn
Wenzhuo Wu (武文倬)School of IE; Flex Lab; Birck Nanotechnology Center; Purdue Quantum Science&Engineering InstitutePatvirtintas el. paštas purdue.edu
Adam CharnasAir Force Research LaboratoryPatvirtintas el. paštas purdue.edu
Hong ZhouXidian UniversityPatvirtintas el. paštas xidian.edu.cn
Zehao LinPhD Candidate in Electrical & Computer Engineering, Purdue UniversityPatvirtintas el. paštas purdue.edu
Haiyan WangPurdue UniversityPatvirtintas el. paštas purdue.edu
Chang NiuPurdue UniversityPatvirtintas el. paštas purdue.edu
Muhammad Ashraful AlamJai N. Gupta Distinguished Professor of Electrical Engineering, Purdue UniversityPatvirtintas el. paštas purdue.edu
Ali ShakouriProfessor of Electrical and Computer Engineering, Purdue UniversityPatvirtintas el. paštas purdue.edu
Dennis Han Chung LinIMECPatvirtintas el. paštas imec.be
Yong P. ChenPurdue University; Aarhus University; WPI-AIMR; MUSTPatvirtintas el. paštas purdue.edu
Dieter WeissUniversitaet Regensburg, Max-Planck Institut FKF Stuttgart, TU München; Technical University MunichPatvirtintas el. paštas ur.de
M. HongNatl Taiwan Univ. Bell LaboratoriesPatvirtintas el. paštas phys.ntu.edu.tw
Sami AlghamdiAssociate Professor at King Abdulaziz University - PhD, Purdue UniversityPatvirtintas el. paštas kau.edu.sa
Mark LundstromProfessor of Electrical and Computer Engineering, Purdue UniversityPatvirtintas el. paštas purdue.edu

Stebėti

Peide Ye

Richard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering, Purdue University

Patvirtintas el. paštas purdue.edu - Pagrindinis puslapis

Microelectronic devices nano-materials nano-electronics condense-matter physics


Pavadinimas Rūšiuoti pagal šaltinius Rūšiuoti pagal metus Rūšiuoti pagal pavadinimą	Cituota Cituota	Metai
Phosphorene: an unexplored 2D semiconductor with a high hole mobility H Liu, AT Neal, Z Zhu, Z Luo, X Xu, D Tománek, PD Ye ACS nano 8 (4), 4033-4041, 2014	6731	2014
Semiconducting black phosphorus: synthesis, transport properties and electronic applications H Liu, Y Du, Y Deng, DY Peide Chemical Society Reviews 44 (9), 2732-2743, 2015	1573	2015
Black Phosphorus–Monolayer MoS₂ van der Waals Heterojunction p–n Diode Y Deng, Z Luo, NJ Conrad, H Liu, Y Gong, S Najmaei, PM Ajayan, J Lou, ... ACS nano 8 (8), 8292-8299, 2014	1360	2014
Bandgap engineering of two-dimensional semiconductor materials A Chaves, JG Azadani, H Alsalman, DR Da Costa, R Frisenda, AJ Chaves, ... npj 2D Materials and Applications 4 (1), 29, 2020	964	2020
Channel Length Scaling of MoS₂ MOSFETs H Liu, AT Neal, PD Ye ACS nano 6 (10), 8563-8569, 2012	937	2012
Chloride Molecular Doping Technique on 2D Materials: WS₂ and MoS₂ L Yang, K Majumdar, H Liu, Y Du, H Wu, M Hatzistergos, PY Hung, ... Nano letters 14 (11), 6275-6280, 2014	817	2014
Field-effect transistors made from solution-grown two-dimensional tellurene Y Wang, G Qiu, R Wang, S Huang, Q Wang, Y Liu, Y Du, WA Goddard III, ... Nature Electronics 1 (4), 228-236, 2018	806	2018
Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus Z Luo, J Maassen, Y Deng, Y Du, RP Garrelts, MS Lundstrom, PD Ye, ... Nature communications 6 (1), 8572, 2015	738	2015
Fabrication of fully transparent nanowire transistors for transparent and flexible electronics S Ju, A Facchetti, Y Xuan, J Liu, F Ishikawa, P Ye, C Zhou, TJ Marks, ... Nature nanotechnology 2 (6), 378-384, 2007	644	2007
GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric PD Ye, B Yang, KK Ng, J Bude, GD Wilk, S Halder, JCM Hwang Applied Physics Letters 86 (6), 2005	611	2005
Phosphorene excites materials scientists ES Reich Nature 506 (7486), 19, 2014	587	2014
InP-based transistor fabrication P Ye, Z Cheng, Y Xuan, Y Wu, B Adekore, J Fiorenza US Patent 8,329,541, 2012	565	2012
Steep-slope hysteresis-free negative capacitance MoS₂ transistors M Si, CJ Su, C Jiang, NJ Conrad, H Zhou, KD Maize, G Qiu, CT Wu, ... Nature nanotechnology 13 (1), 24-28, 2018	544	2018
Dual-Gate MOSFET With Atomic-Layer-Depositedas Top-Gate Dielectric H Liu, DY Peide IEEE electron device letters 33 (4), 546-548, 2012	544	2012
A ferroelectric semiconductor field-effect transistor M Si, AK Saha, S Gao, G Qiu, J Qin, Y Duan, J Jian, C Niu, H Wang, W Wu, ... Nature Electronics 2 (12), 580-586, 2019	508	2019
Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling Y Du, H Liu, Y Deng, PD Ye ACS nano 8 (10), 10035-10042, 2014	504	2014
Electrons in a periodic magnetic field induced by a regular array of micromagnets PD Ye, D Weiss, RR Gerhardts, M Seeger, K Von Klitzing, K Eberl, ... Physical review letters 74 (15), 3013, 1995	452	1995
GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition PD Ye, GD Wilk, B Yang, J Kwo, SNG Chu, S Nakahara, HJL Gossmann, ... Applied Physics Letters 83 (1), 180-182, 2003	420	2003
High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm Y Xuan, YQ Wu, PD Ye IEEE Electron Device Letters 29 (4), 294-296, 2008	410	2008
Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p–n Heterojunctions Y Xu, C Cheng, S Du, J Yang, B Yu, J Luo, W Yin, E Li, S Dong, P Ye, ... ACS nano 10 (5), 4895-4919, 2016	401	2016

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