Huili Grace Xing

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Debdeep JenaCornell UniversityPatvirtintas el. paštas cornell.edu
Kazuki NomotoCornell UniversityPatvirtintas el. paštas cornell.edu
Patrick Fayelectrical engineering, University of Notre DamePatvirtintas el. paštas nd.edu
Zongyang HuElectrical and Computer Engineering, Cornell UniversityPatvirtintas el. paštas cornell.edu
Rusen YanCornell UniversityPatvirtintas el. paštas cornell.edu
Alan SeabaughProfessor of Electrical Engineering, University of Notre DamePatvirtintas el. paštas nd.edu
Berardi Sensale RodriguezThe University of UtahPatvirtintas el. paštas alumni.nd.edu
Wenshen LiIntelPatvirtintas el. paštas cornell.edu
Bo SongAnalog DevicesPatvirtintas el. paštas analog.com
Guowang LiGoogle, WaymoPatvirtintas el. paštas google.com
Yu CaoQorvoPatvirtintas el. paštas qorvo.com
Mingda ZhuFinisar CorporationPatvirtintas el. paštas finisar.com
Umesh MishraUCSBPatvirtintas el. paštas ece.ucsb.edu
Tian FangUniversity of Notre DamePatvirtintas el. paštas alumni.nd.edu
David A MullerProfessor of Applied and Engineering Physics, Cornell UniversityPatvirtintas el. paštas cornell.edu
Sergei RouvimovResearch Associate Professor, University of Notre DamePatvirtintas el. paštas nd.edu
Jai VermaSystem Validation Engineer, Intel CorporationPatvirtintas el. paštas alumni.nd.edu
Kristof TahyUniversity of Notre Dame, Intel Corp.Patvirtintas el. paštas alumni.nd.edu
Reet ChaudhuriSoctera | Cornell University | IntelPatvirtintas el. paštas cornell.edu
Steven DenBaarsProfessor of Materials, University of California Santa BarbaraPatvirtintas el. paštas engineering.ucsb.edu

Stebėti

Huili Grace Xing

Prof. of ECE & MSE, Cornell University

Patvirtintas el. paštas cornell.edu - Pagrindinis puslapis

families of GaN & AlN families of Ga2O3 2D materials devices epitaxy


Pavadinimas Rūšiuoti pagal šaltinius Rūšiuoti pagal metus Rūšiuoti pagal pavadinimą	Cituota Cituota	Metai
Broadband graphene terahertz modulators enabled by intraband transitions B Sensale-Rodriguez, R Yan, MM Kelly, T Fang, K Tahy, WS Hwang, ... Nature communications 3 (1), 780, 2012	1186	2012
Thermal conductivity of monolayer molybdenum disulfide obtained from temperature-dependent Raman spectroscopy R Yan, JR Simpson, S Bertolazzi, J Brivio, M Watson, X Wu, A Kis, T Luo, ... ACS nano 8 (1), 986-993, 2014	946	2014
Exciton Dynamics in Suspended Monolayer and Few-Layer MoS₂ 2D Crystals H Shi, R Yan, S Bertolazzi, J Brivio, B Gao, A Kis, D Jena, HG Xing, ... ACS nano 7 (2), 1072-1080, 2013	927	2013
Polarization-induced hole doping in wide–band-gap uniaxial semiconductor heterostructures J Simon, V Protasenko, C Lian, H Xing, D Jena Science 327 (5961), 60-64, 2010	898	2010
Carrier statistics and quantum capacitance of graphene sheets and ribbons T Fang, A Konar, H Xing, D Jena Applied Physics Letters 91 (9), 2007	856	2007
Heavy doping effects in Mg-doped GaN P Kozodoy, H Xing, SP DenBaars, UK Mishra, A Saxler, R Perrin, ... Journal of Applied Physics 87 (4), 1832-1835, 2000	503	2000
High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates H Xing, Y Dora, A Chini, S Heikman, S Keller, UK Mishra IEEE Electron Device Letters 25 (4), 161-163, 2004	499	2004
InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts andof 370 GHz Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ... IEEE Electron Device Letters 33 (7), 988-990, 2012	439	2012
Intrinsic electron mobility limits in β-Ga2O3 N Ma, N Tanen, A Verma, Z Guo, T Luo, HG Xing, D Jena Applied Physics Letters 109 (21), 2016	421	2016
High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes WS Hwang, A Verma, H Peelaers, V Protasenko, S Rouvimov, ... Applied Physics Letters 104 (20), 2014	404	2014
Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment R Yan, S Fathipour, Y Han, B Song, S Xiao, M Li, N Ma, V Protasenko, ... Nano letters 15 (9), 5791-5798, 2015	395	2015
Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering T Fang, A Konar, H Xing, D Jena Physical Review B—Condensed Matter and Materials Physics 78 (20), 205403, 2008	332	2008
Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior W Sik Hwang, M Remskar, R Yan, V Protasenko, K Tahy, S Doo Chae, ... Applied physics letters 101 (1), 2012	323	2012
Enhancement-Mode Ga₂O₃Vertical Transistors With Breakdown Voltage >1 kV Z Hu, K Nomoto, W Li, N Tanen, K Sasaki, A Kuramata, T Nakamura, ... IEEE Electron Device Letters 39 (6), 869-872, 2018	320	2018
Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators B Sensale-Rodriguez, R Yan, S Rafique, M Zhu, W Li, X Liang, ... Nano letters 12 (9), 4518-4522, 2012	314	2012
Graphene nanoribbon tunnel transistors Q Zhang, T Fang, H Xing, A Seabaugh, D Jena IEEE Electron Device Letters 29 (12), 1344-1346, 2008	307	2008
Field-Plated Ga₂O₃ Trench Schottky Barrier Diodes With a BV²/ of up to 0.95 GW/cm² W Li, K Nomoto, Z Hu, D Jena, HG Xing IEEE Electron Device Letters 41 (1), 107-110, 2019	276	2019
Unique prospects for graphene-based terahertz modulators B Sensale-Rodriguez, T Fang, R Yan, MM Kelly, D Jena, L Liu Applied Physics Letters 99 (11), 2011	257	2011
Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy R Yan, Q Zhang, W Li, I Calizo, T Shen, CA Richter, AR Hight-Walker, ... Applied Physics Letters 101 (2), 2012	233	2012
Polarization-enhanced Mg doping of AlGaN/GaN superlattices P Kozodoy, YP Smorchkova, M Hansen, H Xing, SP DenBaars, UK Mishra, ... Applied Physics Letters 75 (16), 2444-2446, 1999	233	1999

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