| Reverse leakage analysis for as-grown and regrown vertical GaN-on-GaN Schottky barrier diodes K Fu, H Fu, X Huang, TH Yang, CY Cheng, PR Peri, H Chen, J Montes, ... IEEE Journal of the Electron Devices Society 8, 74-83, 2020 | 68 | 2020 |
| High voltage vertical GaN pn diodes with hydrogen-plasma based guard rings H Fu, K Fu, SR Alugubelli, CY Cheng, X Huang, H Chen, TH Yang, ... IEEE Electron Device Letters 41 (1), 127-130, 2019 | 67 | 2019 |
| 1700V/30A 4H-SiC MOSFET with low cut-in voltage embedded diode and room temperature boron implanted termination CT Yen, CC Hung, HT Hung, LS Lee, CY Lee, TM Yang, YF Huang, ... 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 34 | 2015 |
| Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress H Fu, K Fu, C Yang, H Liu, KA Hatch, P Peri, DH Mudiyanselage, B Li, ... Materials Today 49, 296-323, 2021 | 30 | 2021 |
| Demonstration of lateral IGBTs in 4H-SiC KW Chu, WS Lee, CY Cheng, CF Huang, F Zhao, LS Lee, YS Chen, ... IEEE electron device letters 34 (2), 286-288, 2013 | 28 | 2013 |
| Gate length scaling beyond Si: mono-layer 2D channel FETs robust to short channel effects CJ Dorow, A Penumatcha, A Kitamura, C Rogan, KP O’Brien, S Lee, ... 2022 International Electron Devices Meeting (IEDM), 7.5. 1-7.5. 4, 2022 | 27 | 2022 |
| The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices K Fu, H Fu, X Deng, PY Su, H Liu, K Hatch, CY Cheng, D Messina, ... Applied Physics Letters 118 (22), 2021 | 26 | 2021 |
| Negative bias temperature instability of SiC MOSFET CT Yen, HT Hung, CC Hung, CY Lee, HY Lee, LS Lee, YF Huang, ... Materials Science Forum 858, 595-598, 2016 | 9 | 2016 |
| Electron transport analysis of 4H-SiC with full-band Monte Carlo simulation including real-space Coulomb interactions CY Cheng, D Vasileska Journal of Applied Physics 127 (15), 2020 | 4 | 2020 |
| Effect of fixed oxide charges and donor-like interface traps on the breakdown voltage of SiC devices with FGR and JTE terminations CT Yen, HT Hung, CC Hung, CY Lee, LS Lee, YF Huang, TM Yang, ... Materials Science Forum 821, 729-732, 2015 | 4 | 2015 |
| Static and transient simulation of 4H-SiC VDMOS using full-band monte carlo simulation that includes real-space treatment of the coulomb interactions CY Cheng, D Vasileska IEEE Transactions on Electron Devices 67 (9), 3705-3710, 2020 | 3 | 2020 |
| Novel Full-Band Monte Carlo Device Simulator with Real-Space Treatment of the Short-Range Coulomb Interactions for Modeling 4H-SiC Power Devices CY Cheng, D Vasileska 2020 International Conference on Simulation of Semiconductor Processes and …, 2020 | | 2020 |
| A Full-Band Monte Carlo Transport Simulator for Wide Bandgap Materials in Power Electronics CY Cheng Arizona State University, 2020 | | 2020 |
| Full-Band Device Simulator with Real-Space Treatment of the Short-Range Coulomb Interac-tions for Modeling 4H-SiC VDMOS Devices D Vasileska, CY Cheng | | |
| Lateral High-Voltage 4H-SiC IGBTs WS Lee, CY Cheng, KW Chu, CF Huang, F Zhao, LS Lee, YS Chen, ... | | |
Kai FuThe University of UtahPatvirtintas el. paštas utah.edu