| Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics H Liu, H Fu, K Fu, SR Alugubelli, PY Su, Y Zhao, FA Ponce Applied Physics Letters 114 (8), 2019 | 36 | 2019 |
| Effect of capping procedure on quantum dot morphology: Implications on optical properties and efficiency of InAs/GaAs quantum dot solar cells EC Weiner, R Jakomin, DN Micha, H Xie, PY Su, LD Pinto, MP Pires, ... Solar Energy Materials and Solar Cells 178, 240-248, 2018 | 33 | 2018 |
| Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress H Fu, K Fu, C Yang, H Liu, KA Hatch, P Peri, DH Mudiyanselage, B Li, ... Materials Today 49, 296-323, 2021 | 30 | 2021 |
| The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices K Fu, H Fu, X Deng, PY Su, H Liu, K Hatch, CY Cheng, D Messina, ... Applied Physics Letters 118 (22), 2021 | 26 | 2021 |
| Lateral and vertical growth of Mg-doped GaN on trench-patterned GaN films PY Su, H Liu, C Yang, K Fu, H Fu, Y Zhao, FA Ponce Applied Physics Letters 117 (10), 2020 | 17 | 2020 |
| Demonstration of GaN-based metal–insulator–semiconductor junction by hydrogen plasma treatment C Yang, H Fu, PY Su, H Liu, K Fu, X Huang, TH Yang, H Chen, J Zhou, ... Applied Physics Letters 117 (5), 2020 | 10 | 2020 |
| Influence of substrate misorientation on the optical properties of Mg-doped GaN H Liu, PY Su, Z Wu, R Liu, FA Ponce Journal of Applied Physics 127 (19), 2020 | 6 | 2020 |
| Characterization of MOCVD regrown p-GaN and the interface properties for vertical GaN power devices K Fu, X Qi, H Fu, PY Su, H Liu, TH Yang, C Yang, J Montes, J Zhou, ... Semiconductor Science and Technology 36 (1), 014005, 2020 | 5 | 2020 |
| Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures X Huang, D Li, PY Su, H Fu, H Chen, C Yang, J Zhou, X Qi, TH Yang, ... Nano Energy 76, 105013, 2020 | 5 | 2020 |
| The effect of low-angle off-axis GaN substrate orientation on the surface morphology of Mg-doped GaN epilayers PY Su, H Liu, S Wang, Z Wu, R Liu, FA Ponce Journal of Applied Physics 128 (5), 2020 | 4 | 2020 |
| Effect of InAs quantum dots capped with GaAs on atomic-scale ordering in Ga0. 5In0. 5P PY Su, H Liu, RMS Kawabata, EC Weiner, R Jakomin, MP Pires, RR King, ... Journal of Applied Physics 125 (5), 2019 | 4 | 2019 |
| Methods for improving thin film quality JL Winkler, P Raisanen, PY Su US Patent US20230175129A1, 2023 | 1 | 2023 |
| Structural and Optical Properties of III-V Semiconductor Materials for Photovoltaics and Power Electronic Applications PY Su Arizona State University, 2020 | | 2020 |
| Effect of InAs quantum dots capped with GaAs on ordering in Ga0. 5In0. 5P PY Su, H Liu, RMS Kawabata, EC Weiner, R Jakomin, MP Pires, RR King, ... | | |