Straipsniai su viešo pasiekiamumo įpareigojimais - Anthony O'NeillSužinokite daugiau
Niekur nepasiekiama: 9
3D determination of a MOSFET gate morphology by FIB tomography
BJ Inkson, S Olsen, DJ Norris, AG O'Neill, G Möbus
Microscopy of Semiconducting Materials 2003, 611-616, 2018
Įpareigojimai: UK Engineering and Physical Sciences Research Council
Micro-machinability studies of single crystal silicon using diamond end-mill
ZJ Choong, D Huo, P Degenaar, A O’Neill
International Manufacturing Science and Engineering Conference 49897 …, 2016
Įpareigojimai: UK Engineering and Physical Sciences Research Council
High-Mobility SiC MOSFETs Using a Thin-SiO2/Al2O3 Gate Stack
J Urresti, F Arith, K Vassilevski, AK Tiwari, S Olsen, NG Wright, AG O'Neill
Materials Science Forum 924, 494-497, 2018
Įpareigojimai: UK Engineering and Physical Sciences Research Council
High Mobility 4H-SiC MOSFET
A O’Neill, F Arith, J Urresti, K Vasilevskiy, N Wright, S Olsen
2018 14th IEEE International Conference on Solid-State and Integrated …, 2018
Įpareigojimai: UK Engineering and Physical Sciences Research Council
High Mobility 4H-SiC MOSFET Using a Thin SiO2/Al2O3 Gate Stack
F Arith, J Urrcsti, K Vasilevskiy, S Oisenl, N Wright, A O'Neill
2018 48th European Solid-State Device Research Conference (ESSDERC), 30-33, 2018
Įpareigojimai: UK Engineering and Physical Sciences Research Council
Characterisation of 4H-SiC MOS capacitor with a protective coating for harsh environments applications
SK Roy, JU Ibanez, A O'Neill, NG Wright, AB Horsfall
Materials Science Forum 897, 327-330, 2017
Įpareigojimai: UK Engineering and Physical Sciences Research Council
Electrical Characterization of Epitaxial Graphene Field-Effect Transistors with High-k Al2O3 Gate Dielectric Fabricated on SiC Substrates
T Hopf, K Vassilevski, E Escobedo-Cousin, P King, NG Wright, A O'Neill, ...
Materials Science Forum 821, 937-940, 2015
Įpareigojimai: UK Engineering and Physical Sciences Research Council
W: Ti Intraneural Flexible Electrode for Acute Peripheral Nerve Stimulation Studies
C Silveira, E Brunton, E Escobedo-Cousin, G Gupta, R Whittaker, ...
2020 27th IEEE International Conference on Electronics, Circuits and Systems …, 2020
Įpareigojimai: UK Engineering and Physical Sciences Research Council
Measurements of gate-oxide interface roughness in strained-Si virtual substrate SiGe/Si MOSFET device structures
DJ Norris, AG Cullis, SH Olsen, AG O'Neill, J Zhang
Microscopy of Semiconducting Materials 2003, 389-392, 2018
Įpareigojimai: UK Engineering and Physical Sciences Research Council
Kur nors pasiekiama: 34
Experimental observation of negative capacitance in ferroelectrics at room temperature
DJR Appleby, NK Ponon, KSK Kwa, B Zou, PK Petrov, T Wang, NM Alford, ...
Nano letters 14 (7), 3864-3868, 2014
Įpareigojimai: UK Engineering and Physical Sciences Research Council
Effect of deposition conditions and post deposition anneal on reactively sputtered titanium nitride thin films
NK Ponon, DJR Appleby, E Arac, PJ King, S Ganti, KSK Kwa, A O'Neill
Thin Solid Films 578, 31-37, 2015
Įpareigojimai: UK Engineering and Physical Sciences Research Council
The sinusoidal probe: a new approach to improve electrode longevity
HS Sohal, A Jackson, R Jackson, GJ Clowry, K Vassilevski, A O’Neill, ...
Frontiers in neuroengineering 7, 10, 2014
Įpareigojimai: UK Engineering and Physical Sciences Research Council, Wellcome Trust
Genomewide linkage scan of schizophrenia in a large multicenter pedigree sample using single nucleotide polymorphisms
PA Holmans, B Riley, AE Pulver, MJ Owen, DB Wildenauer, PV Gejman, ...
Molecular psychiatry 14 (8), 786-795, 2009
Įpareigojimai: US National Institutes of Health
Mechanical flexibility reduces the foreign body response to long-term implanted microelectrodes in rabbit cortex
HS Sohal, GJ Clowry, A Jackson, A O’Neill, SN Baker
PloS one 11 (10), e0165606, 2016
Įpareigojimai: UK Engineering and Physical Sciences Research Council, UK Medical Research …
Increased Mobility in Enhancement Mode 4H-SiC MOSFET Using a Thin SiO2 / Al2O3 Gate Stack
F Arith, J Urresti, K Vasilevskiy, S Olsen, N Wright, A O’Neill
IEEE Electron Device Letters 39 (4), 564-567, 2018
Įpareigojimai: UK Engineering and Physical Sciences Research Council
Ferroelectric properties in thin film barium titanate grown using pulsed laser deposition
DJR Appleby, NK Ponon, KSK Kwa, S Ganti, U Hannemann, PK Petrov, ...
Journal of Applied Physics 116 (12), 2014
Įpareigojimai: UK Engineering and Physical Sciences Research Council
Opto‐electro‐thermal optimization of photonic probes for optogenetic neural stimulation
N Dong, R Berlinguer‐Palmini, A Soltan, N Ponon, A O'Neil, A Travelyan, ...
Journal of biophotonics 11 (10), e201700358, 2018
Įpareigojimai: UK Engineering and Physical Sciences Research Council, Wellcome Trust
Closed-loop optogenetic control of the dynamics of neural activity in non-human primates
B Zaaimi, M Turnbull, A Hazra, Y Wang, C Gandara, F McLeod, ...
Nature biomedical engineering 7 (4), 559-575, 2023
Įpareigojimai: UK Engineering and Physical Sciences Research Council, UK Medical Research …
Two non-synonymous markers in PTPN21, identified by genome-wide association study data-mining and replication, are associated with schizophrenia
J Chen, G Lee, AH Fanous, Z Zhao, P Jia, A O'neill, D Walsh, KS Kendler, ...
Schizophrenia research 131 (1-3), 43-51, 2011
Įpareigojimai: US National Institutes of Health
Design and Analysis of High Mobility Enhancement-Mode 4H-SiC MOSFETs Using a Thin-SiO2/Al2O3 Gate-Stack
J Urresti, F Arith, S Olsen, N Wright, A O’Neill
IEEE Transactions on Electron Devices 66 (4), 1710-1716, 2019
Įpareigojimai: UK Engineering and Physical Sciences Research Council
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