Hongping Zhao

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Nelson TansuHead of School & Professor, School of Electrical & Mechanical Engineering [EEE, ME, & BME]Patvirtintas el. paštas adelaide.edu.au
A F M Anhar Uddin BhuiyanAssistant Professor, Electrical and Computer Engineering, University of Massachusetts LowellPatvirtintas el. paštas uml.edu
Zixuan FengThe Ohio State UniversityPatvirtintas el. paštas osu.edu
Jing ZhangAssociate Professor, Rochester Institute of TechnologyPatvirtintas el. paštas rit.edu
Jinwoo HwangAssociate Professor, Materials Science and Engineering, Ohio State UniversityPatvirtintas el. paštas osu.edu
Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityPatvirtintas el. paštas ece.osu.edu
Md Rezaul KarimIntel CorporationPatvirtintas el. paštas osu.edu
Yuxuan ZhangFinwave Semiconductor Inc.Patvirtintas el. paštas finwavesemi.com
Kathleen KashProfessor of Physics, Case Western Reserve UniversityPatvirtintas el. paštas case.edu
Aaron ArehartAssistant Research Professor of Electrical and Computer Engineering, The Ohio State UniversityPatvirtintas el. paštas osu.edu
Steven RingelThe Ohio State UniversityPatvirtintas el. paštas osu.edu
Shin MouAir Force Research LaboratoryPatvirtintas el. paštas us.af.mil
Adam T. NealAir Force Research LabPatvirtintas el. paštas us.af.mil
Uttam SingisettiProfessor, Electrical Engineering, Univeristy at Buffalo (SUNY)Patvirtintas el. paštas buffalo.edu
Leonard BrillsonThe Ohio State UniversityPatvirtintas el. paštas osu.edu
Baishakhi MazumderUniversity at BuffaloPatvirtintas el. paštas buffalo.edu
Philip FengWally Rhines Endowed Professor of ECE, Graduate Faculty in Physics, University of FloridaPatvirtintas el. paštas ufl.edu
Vijay Gopal Thirupakuzi VangipuramThe Ohio State UniversityPatvirtintas el. paštas buckeyemail.osu.edu
Kaitian ZhangThe Ohio State UniversityPatvirtintas el. paštas osu.edu
Marko J. TadjerNaval Research LaboratoryPatvirtintas el. paštas nrl.navy.mil

Stebėti

Hongping Zhao

Professor of Electrical & Computer Engineering, Materials Science & Engineering, OSU

Patvirtintas el. paštas osu.edu - Pagrindinis puslapis

wide and ultrawide bandgap semiconductor materials and devices III-nitridesII-IV-nitridesIII-Oxides


Pavadinimas Rūšiuoti pagal šaltinius Rūšiuoti pagal metus Rūšiuoti pagal pavadinimą	Cituota Cituota	Metai
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells H Zhao, G Liu, J Zhang, JD Poplawsky, V Dierolf, N Tansu Optics express 19 (S4), A991-A1007, 2011	634	2011
MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties Z Feng, AFM Anhar Uddin Bhuiyan, MR Karim, H Zhao Applied Physics Letters 114 (25), 2019	336	2019
Donors and deep acceptors in β-Ga2O3 AT Neal, S Mou, S Rafique, H Zhao, E Ahmadi, JS Speck, KT Stevens, ... Applied Physics Letters 113 (6), 2018	301	2018
Self-consistent analysis of strain-compensated InGaN–AlGaN quantum wells for lasers and light-emitting diodes H Zhao, RA Arif, YK Ee, N Tansu IEEE Journal of Quantum Electronics 45 (1), 66-78, 2008	264	2008
Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition S Rafique, L Han, MJ Tadjer, JA Freitas, NA Mahadik, H Zhao Applied Physics Letters 108 (18), 2016	249	2016
Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes H Zhao, G Liu, RA Arif, N Tansu Solid-State Electronics 54 (10), 1119-1124, 2010	235	2010
Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers J Zhang, H Zhao, N Tansu Applied Physics Letters 97 (11), 2010	234	2010
Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes H Zhao, G Liu, J Zhang, RA Arif, N Tansu Journal of Display Technology 9 (4), 212-225, 2013	211	2013
Analysis of InGaN-delta-InN quantum wells for light-emitting diodes H Zhao, G Liu, N Tansu Applied Physics Letters 97 (13), 2010	204	2010
Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile H Zhao, G Liu, XH Li, GS Huang, JD Poplawsky, ST Penn, V Dierolf, ... Applied Physics Letters 95 (6), 2009	199	2009
III-nitride photonics N Tansu, H Zhao, G Liu, XH Li, J Zhang, H Tong, YK Ee IEEE Photonics Journal 2 (2), 241-248, 2010	179	2010
MOCVD epitaxy of β-(AlxGa1− x) 2O3 thin films on (010) Ga2O3 substrates and N-type doping AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, Z Chen, HL Huang, ... Applied Physics Letters 115 (12), 2019	169	2019
Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes C Joishi, S Rafique, Z Xia, L Han, S Krishnamoorthy, Y Zhang, S Lodha, ... Applied Physics Express 11 (3), 031101, 2018	167	2018
Optical signatures of deep level defects in Ga2O3 H Gao, S Muralidharan, N Pronin, MR Karim, SM White, T Asel, G Foster, ... Applied Physics Letters 112 (24), 2018	164	2018
Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition S Rafique, L Han, AT Neal, S Mou, MJ Tadjer, RH French, H Zhao Applied Physics Letters 109 (13), 2016	161	2016
Spontaneous emission and characteristics of staggered InGaN quantum-well light-emitting diodes RA Arif, H Zhao, YK Ee, N Tansu IEEE Journal of Quantum Electronics 44 (6), 573-580, 2008	161	2008
Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses YK Ee, P Kumnorkaew, RA Arif, H Tong, H Zhao, JF Gilchrist, N Tansu IEEE journal of selected topics in quantum electronics 15 (4), 1218-1225, 2009	156	2009
Design analysis of staggered InGaN quantum wells light-emitting diodes at 500–540 nm H Zhao, RA Arif, N Tansu IEEE Journal of selected topics in quantum electronics 15 (4), 1104-1114, 2009	154	2009
LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates S Rafique, MR Karim, JM Johnson, J Hwang, H Zhao Applied Physics Letters 112 (5), 2018	143	2018
Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid-and deep-ultraviolet spectral regimes J Zhang, H Zhao, N Tansu Applied Physics Letters 98 (17), 2011	141	2011

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