Straipsniai su viešo pasiekiamumo įpareigojimais - Panni WangSužinokite daugiau
Niekur nepasiekiama: 12
Exploiting hybrid precision for training and inference: A 2T-1FeFET based analog synaptic weight cell
X Sun, P Wang, K Ni, S Datta, S Yu
2018 IEEE international electron devices meeting (IEDM), 3.1. 1-3.1. 4, 2018
Įpareigojimai: US Department of Defense
Direct comparison of ferroelectric properties in Hf0. 5Zr0. 5O2 between thermal and plasma-enhanced atomic layer deposition
J Hur, N Tasneem, G Choe, P Wang, Z Wang, AI Khan, S Yu
Nanotechnology 31 (50), 505707, 2020
Įpareigojimai: US National Science Foundation, US Department of Defense
Ferroelectric HfO2-based synaptic devices: recent trends and prospects
S Yu, J Hur, YC Luo, W Shim, G Choe, P Wang
Semiconductor Science and Technology 36 (10), 104001, 2021
Įpareigojimai: US Department of Defense
Ferroelectric devices and circuits for neuro-inspired computing
P Wang, S Yu
MRS Communications 10 (4), 538-548, 2020
Įpareigojimai: US Department of Defense
Investigating ferroelectric minor loop dynamics and history effect—Part I: Device characterization
P Wang, Z Wang, X Sun, J Hur, S Datta, AI Khan, S Yu
IEEE Transactions on Electron Devices 67 (9), 3592-3597, 2020
Įpareigojimai: US Department of Defense
Investigating Ferroelectric Minor Loop Dynamics and History Effect--Part II: Physical Modeling and Impact on Neural Network Training
P Wang, Z Wang, X Sun, J Hur, S Datta, AI Khan, S Yu
IEEE Transactions on Electron Devices, 2020
Įpareigojimai: US Department of Defense
Impact of random phase distribution in ferroelectric transistors-based 3-D NAND architecture on in-memory computing
G Choe, W Shim, P Wang, J Hur, AI Khan, S Yu
IEEE Transactions on Electron Devices 68 (5), 2543-2548, 2021
Įpareigojimai: US Department of Defense
Interplay of switching characteristics, cycling endurance and multilevel retention of ferroelectric capacitor
J Hur, P Wang, Z Wang, G Choe, N Tasneem, AI Khan, S Yu
2020 IEEE International Electron Devices Meeting (IEDM), 39.5. 1-39.5. 4, 2020
Įpareigojimai: US Department of Defense
Ferroelectric tunnel junction optimization by plasma-enhanced atomic layer deposition
J Hur, YC Luo, P Wang, N Tasneem, AI Khan, S Yu
2020 IEEE Silicon Nanoelectronics Workshop (SNW), 11-12, 2020
Įpareigojimai: US Department of Defense
Investigating dynamic minor loop of ferroelectric capacitor
P Wang, Z Wang, N Tasneem, J Hur, AI Khan, S Yu
2019 19th Non-Volatile Memory Technology Symposium (NVMTS), 1-4, 2019
Įpareigojimai: US Department of Defense
Ferroelectric transistors for synaptic devices: Challenges and prospects
S Yu, P Wang, X Peng
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit …, 2020
Įpareigojimai: US Department of Defense
Modeling multi-states in ferroelectric tunnel junction
YC Luo, J Hur, P Wang, AI Khan, S Yu
2020 Device Research Conference (DRC), 1-2, 2020
Įpareigojimai: US Department of Defense
Kur nors pasiekiama: 10
Drain–erase scheme in ferroelectric field-effect transistor—Part I: Device characterization
P Wang, Z Wang, W Shim, J Hur, S Datta, AI Khan, S Yu
IEEE Transactions on Electron Devices 67 (3), 955-961, 2020
Įpareigojimai: US National Science Foundation, US Department of Defense
Cryogenic behavior of NbO2 based threshold switching devices as oscillation neurons
P Wang, AI Khan, S Yu
Applied Physics Letters 116 (16), 2020
Įpareigojimai: US National Science Foundation
Drain-erase scheme in ferroelectric field effect transistor—Part II: 3-D-NAND architecture for in-memory computing
P Wang, W Shim, Z Wang, J Hur, S Datta, AI Khan, S Yu
IEEE Transactions on Electron Devices 67 (3), 962-967, 2020
Įpareigojimai: US National Science Foundation, US Department of Defense
Non-volatile, small-signal capacitance in ferroelectric capacitors
YC Luo, J Hur, P Wang, AI Khan, S Yu
Applied Physics Letters 117 (7), 2020
Įpareigojimai: US National Science Foundation, US Department of Defense
Integrated crossbar array with resistive synapses and oscillation neurons
J Woo, P Wang, S Yu
IEEE Electron Device Letters 40 (8), 1313-1316, 2019
Įpareigojimai: US National Science Foundation, US Department of Defense
The impact of ferroelectric FETs on digital and analog circuits and architectures
X Chen, X Sun, P Wang, S Datta, XS Hu, X Yin, M Jerry, S Yu, AF Laguna, ...
IEEE Design & Test 37 (1), 79-99, 2019
Įpareigojimai: US Department of Defense, Chinese Academy of Sciences, National Natural …
Benchmark of ferroelectric transistor-based hybrid precision synapse for neural network accelerator
Y Luo, P Wang, X Peng, X Sun, S Yu
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 5 …, 2019
Įpareigojimai: US Department of Defense
Depolarization Field Induced Instability of Polarization States in HfO2 Based Ferroelectric FET
Z Wang, MM Islam, P Wang, S Deng, S Yu, AI Khan, K Ni
2020 IEEE International Electron Devices Meeting (IEDM), 4.5. 1-4.5. 4, 2020
Įpareigojimai: US National Science Foundation
Leidyklos ir finansavimo informaciją automatiškai nustato kompiuterio programa