| Synergistic Interlayer and Defect Engineering in VS2 Nanosheets toward Efficient Electrocatalytic Hydrogen Evolution Reaction J Zhang, C Zhang, Z Wang, J Zhu, Z Wen, X Zhao, X Zhang, J Xu, Z Lu Small 14 (9), 1703098, 2018 | 255 | 2018 |
| Spin-momentum locking and spin-orbit torques in magnetic nano-heterojunctions composed of Weyl semimetal WTe 2 P Li, W Wu, Y Wen, C Zhang, J Zhang, S Zhang, Z Yu, SA Yang, ... Nature communications 9 (1), 1-10, 2018 | 169 | 2018 |
| Intrinsic point defects in inorganic perovskite CsPbI3 from first-principles prediction Y Li, C Zhang, X Zhang, D Huang, Q Shen, Y Cheng, W Huang Applied Physics Letters 111 (16), 162106, 2017 | 136 | 2017 |
| Giant planar Hall effect in the Dirac semimetal P Li, CH Zhang, JW Zhang, Y Wen, XX Zhang Physical Review B 98 (12), 121108, 2018 | 118 | 2018 |
| Giant ferroelectric resistance switching controlled by a modulatory terminal for low‐power neuromorphic in‐memory computing F Xue, X He, Z Wang, JRD Retamal, Z Chai, L Jing, C Zhang, H Fang, ... Advanced Materials, 2008709, 2021 | 105 | 2021 |
| Optoelectronic Ferroelectric Domain‐Wall Memories Made from a Single Van Der Waals Ferroelectric F Xue, X He, W Liu, D Periyanagounder, C Zhang, M Chen, CH Lin, L Luo, ... Advanced Functional Materials, 2004206, 2020 | 99 | 2020 |
| Fractal‐Theory‐Based Control of the Shape and Quality of CVD‐Grown 2D Materials J Li, M Chen, C Zhang, H Dong, W Lin, P Zhuang, Y Wen, B Tian, W Cai, ... Advanced Materials 31 (35), 1902431, 2019 | 78 | 2019 |
| Anisotropic planar Hall effect in the type-II topological Weyl semimetal P Li, C Zhang, Y Wen, L Cheng, G Nichols, DG Cory, GX Miao, XX Zhang Physical Review B 100 (20), 205128, 2019 | 75 | 2019 |
| Integrated memory devices based on 2D materials F Xue, C Zhang, Y Ma, Y Wen, X He, B Yu, X Zhang Advanced Materials 34 (48), 2201880, 2022 | 69 | 2022 |
| Fast water transport and molecular sieving through ultrathin ordered conjugated-polymer-framework membranes J Shen, Y Cai, C Zhang, W Wei, C Chen, L Liu, K Yang, Y Ma, Y Wang, ... Nature Materials, 1-8, 2022 | 68 | 2022 |
| Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe Y Li, Y Li, P Li, B Fang, X Yang, Y Wen, D Zheng, C Zhang, X He, ... Nature Communications 12 (1), 1-8, 2021 | 65 | 2021 |
| Room‐Temperature Magnetic Skyrmions and Large Topological Hall Effect in Chromium Telluride Engineered by Self‐Intercalation C Zhang, C Liu, J Zhang, Y Yuan, Y Wen, Y Li, D Zheng, Q Zhang, Z Hou, ... Advanced Materials 35 (1), 2205967, 2023 | 63 | 2023 |
| Unraveling the origin of ferroelectric resistance switching through the interfacial engineering of layered ferroelectric-metal junctions F Xue, X He, Y Ma, D Zheng, C Zhang, LJ Li, JH He, B Yu, X Zhang Nature Communications 12 (1), 1-8, 2021 | 63 | 2021 |
| Chiral Helimagnetism and One‐Dimensional Magnetic Solitons in a Cr‐Intercalated Transition Metal Dichalcogenide C Zhang, J Zhang, C Liu, S Zhang, Y Yuan, P Li, Y Wen, Z Jiang, B Zhou, ... Advanced Materials 33 (35), 2101131, 2021 | 60 | 2021 |
| Enhancing temperature stability in potassium-sodium niobate ceramics through phase boundary and composition design X Lv, J Wu, C Zhao, D Xiao, J Zhu, Z Zhang, C Zhang, X Zhang Journal of the European Ceramic Society 39 (2-3), 305-315, 2019 | 52 | 2019 |
| Field-free switching of perpendicular magnetization at room temperature using out-of-plane spins from TaIrTe4 Y Liu, G Shi, D Kumar, T Kim, S Shi, D Yang, J Zhang, C Zhang, F Wang, ... Nature Electronics, 1-7, 2023 | 51 | 2023 |
| Critical behavior of intercalated quasi-van der Waals ferromagnet C Zhang, Y Yuan, M Wang, P Li, J Zhang, Y Wen, S Zhou, XX Zhang Physical Review Materials 3 (11), 114403, 2019 | 42 | 2019 |
| Unveiling defect-mediated carrier dynamics in monolayer semiconductors by spatiotemporal microwave imaging Z Chu, CY Wang, J Quan, C Zhang, C Lei, A Han, X Ma, HL Tang, ... Proceedings of the National Academy of Sciences 117 (25), 13908-13913, 2020 | 39 | 2020 |
| High‐efficiency Magnon‐mediated Magnetization Switching in All‐oxide Heterostructures with Perpendicular Magnetic Anisotropy D Zheng, J Lan, B Fang, Y Li, C Liu, JO Ledesma‐Martin, Y Wen, P Li, ... Advanced Materials, 2203038, 2022 | 35 | 2022 |
| Homostructured negative differential resistance device based on zigzag phosphorene nanoribbons C Zhang, G Xiang, M Lan, Z Tang, L Deng, X Zhang RSC Advances 5 (50), 40358-40362, 2015 | 35 | 2015 |
xixiang zhangProfessor, King Abdullah University of Science and Technology(KAUST)Patvirtintas el. paštas kaust.edu.sa