| High-mobility window for two-dimensional electron gases at ultrathin AlN∕ GaN heterojunctions Y Cao, D Jena Applied physics letters 90 (18), 2007 | 363 | 2007 |
| Heat‐transport mechanisms in superlattices YK Koh, Y Cao, DG Cahill, D Jena Advanced Functional Materials 19 (4), 610-615, 2009 | 283 | 2009 |
| AlN/GaN insulated-gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance T Zimmermann, D Deen, Y Cao, J Simon, P Fay, D Jena, HG Xing IEEE Electron Device Letters 29 (7), 661-664, 2008 | 216 | 2008 |
| 1.9-kV AlGaN/GaN lateral Schottky barrier diodes on silicon M Zhu, B Song, M Qi, Z Hu, K Nomoto, X Yan, Y Cao, W Johnson, E Kohn, ... IEEE Electron Device Letters 36 (4), 375-377, 2015 | 211 | 2015 |
| MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 J Guo, G Li, F Faria, Y Cao, R Wang, J Verma, X Gao, S Guo, E Beam, ... IEEE Electron device letters 33 (4), 525-527, 2012 | 188 | 2012 |
| An experimental demonstration of GaN CMOS technology R Chu, Y Cao, M Chen, R Li, D Zehnder IEEE Electron Device Letters 37 (3), 269-271, 2016 | 180 | 2016 |
| High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth Y Cao, R Chu, R Li, M Chen, R Chang, B Hughes Applied Physics Letters 108, 062103, 2016 | 149 | 2016 |
| 600 V/ Normally-Off GaN Vertical Trench Metal–Oxide–Semiconductor Field-Effect Transistor R Li, Y Cao, M Chen, R Chu IEEE Electron Device Letter 37 (11), 1466, 2016 | 144 | 2016 |
| 210-GHz InAlN/GaN HEMTs with dielectric-free passivation R Wang, G Li, O Laboutin, Y Cao, W Johnson, G Snider, P Fay, D Jena, ... IEEE electron device letters 32 (7), 892-894, 2011 | 136 | 2011 |
| Nanowire Channel InAlN/GaN HEMTs With High Linearity ofand DS Lee, H Wang, A Hsu, M Azize, O Laboutin, Y Cao, JW Johnson, ... IEEE electron device letters 34 (8), 969-971, 2013 | 132 | 2013 |
| Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design D Jena, J Simon, A Wang, Y Cao, K Goodman, J Verma, S Ganguly, G Li, ... physica status solidi (a) 208 (7), 1511-1516, 2011 | 115 | 2011 |
| ScAlN/GaN high-electron-mobility transistors with 2.4-A/mm current density and 0.67-S/mm transconductance AJ Green, JK Gillespie, RC Fitch, DE Walker, M Lindquist, A Crespo, ... IEEE Electron Device Letters 40 (7), 1056-1059, 2019 | 106 | 2019 |
| 220-GHz quaternary barrier InAlGaN/AlN/GaN HEMTs R Wang, G Li, J Verma, B Sensale-Rodriguez, T Fang, J Guo, Z Hu, ... IEEE Electron device letters 32 (9), 1215-1217, 2011 | 98 | 2011 |
| 3.3 kV multi-channel AlGaN/GaN Schottky barrier diodes with P-GaN termination M Xiao, Y Ma, K Cheng, K Liu, A Xie, E Beam, Y Cao, Y Zhang IEEE Electron Device Letters 41 (8), 1177-1180, 2020 | 96 | 2020 |
| Polarization-induced GaN-on-insulator E/D mode p-channel heterostructure FETs G Li, R Wang, B Song, J Verma, Y Cao, S Ganguly, A Verma, J Guo, ... IEEE electron device letters 34 (7), 852-854, 2013 | 85 | 2013 |
| Quaternary Barrier InAlGaN HEMTs With of 230/300 GHz R Wang, G Li, G Karbasian, J Guo, B Song, Y Yue, Z Hu, O Laboutin, ... IEEE electron device letters 34 (3), 378-380, 2013 | 81 | 2013 |
| Compositional modulation and optical emission in AlGaN epitaxial films M Gao, ST Bradley, Y Cao, D Jena, Y Lin, SA Ringel, J Hwang, WJ Schaff, ... Journal of Applied physics 100 (10), 2006 | 76 | 2006 |
| MBE growth of high conductivity single and multiple AlN/GaN heterojunctions Y Cao, K Wang, G Li, T Kosel, H Xing, D Jena Journal of Crystal Growth 323 (1), 529-533, 2011 | 70 | 2011 |
| RF power performance of Sc (al, Ga) N/GaN HEMTs at Ka-band AJ Green, N Moser, NC Miller, KJ Liddy, M Lindquist, M Elliot, JK Gillespie, ... IEEE Electron Device Letters 41 (8), 1181-1184, 2020 | 67 | 2020 |
| Threshold Voltage Control in HEMTs by Work-Function Engineering G Li, T Zimmermann, Y Cao, C Lian, X Xing, R Wang, P Fay, HG Xing, ... IEEE Electron Device Letters 31 (9), 954-956, 2010 | 66 | 2010 |
Debdeep JenaCornell UniversityPatvirtintas el. paštas cornell.edu