Planar Fully depleted SOI technology: A Powerful architecture for the 20nm node and beyond O Faynot, F Andrieu, O Weber, C Fenouillet-Béranger, P Perreau, ...
2010 International Electron Devices Meeting, 3.2. 1-3.2. 4, 2010
332 2010 Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well L Grenouillet, C Bru-Chevallier, G Guillot, P Gilet, P Duvaut, C Vannuffel, ...
Applied Physics Letters 76 (16), 2241-2243, 2000
261 2000 Electrically driven high-Q quantum dot-micropillar cavities C Böckler, S Reitzenstein, C Kistner, R Debusmann, A Löffler, T Kida, ...
Applied Physics Letters 92 (9), 2008
199 2008 Vertically stacked-nanowires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain S Barraud, V Lapras, MP Samson, L Gaben, L Grenouillet, ...
2016 IEEE International Electron Devices Meeting (IEDM), 17.6. 1-17.6. 4, 2016
128 2016 Demonstration of BEOL-compatible ferroelectric Hf0.5 Zr0.5 O2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications T Francois, L Grenouillet, J Coignus, P Blaise, C Carabasse, N Vaxelaire, ...
2019 IEEE International Electron Devices Meeting (IEDM), 15.7. 1-15.7. 4, 2019
127 2019 High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond Q Liu, M Vinet, J Gimbert, N Loubet, R Wacquez, L Grenouillet, Y Le Tiec, ...
2013 IEEE International Electron Devices Meeting, 9.2. 1-9.2. 4, 2013
123 2013 High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET K Cheng, A Khakifirooz, N Loubet, S Luning, T Nagumo, M Vinet, Q Liu, ...
2012 International Electron Devices Meeting, 18.1. 1-18.1. 4, 2012
122 2012 14nm FDSOI technology for high speed and energy efficient applications O Weber, E Josse, F Andrieu, A Cros, E Richard, P Perreau, E Baylac, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
118 2014 Nanophotonic devices for optical interconnect D Van Thourhout, T Spuesens, SK Selvaraja, L Liu, G Roelkens, R Kumar, ...
IEEE Journal of Selected Topics in Quantum Electronics 16 (5), 1363-1375, 2010
107 2010 Rapid thermal annealing in L Grenouillet, C Bru-Chevallier, G Guillot, P Gilet, P Ballet, P Duvaut, ...
Journal of applied physics 91 (9), 5902-5908, 2002
83 2002 Resistive RAM endurance: Array-level characterization and correction techniques targeting deep learning applications A Grossi, E Vianello, MM Sabry, M Barlas, L Grenouillet, J Coignus, ...
IEEE Transactions on Electron Devices 66 (3), 1281-1288, 2019
79 2019 Roadmap on ferroelectric hafnia-and zirconia-based materials and devices JPB Silva, R Alcala, UE Avci, N Barrett, L Bégon-Lours, M Borg, S Byun, ...
APL Materials 11 (8), 2023
75 2023 Impact of back bias on ultra-thin body and BOX (UTBB) devices Q Liu, F Monsieur, A Kumar, T Yamamoto, A Yagishita, P Kulkarni, ...
2011 Symposium on VLSI Technology-Digest of Technical Papers, 160-161, 2011
69 2011 UTBB FDSOI transistors with dual STI for a multi-Vt strategy at 20nm node and below L Grenouillet, M Vinet, J Gimbert, B Giraud, JP Noel, Q Liu, P Khare, ...
2012 International Electron Devices Meeting, 3.6. 1-3.6. 4, 2012
62 2012 High-density 3D monolithically integrated multiple 1T1R multi-level-cell for neural networks E Esmanhotto, L Brunet, N Castellani, D Bonnet, T Dalgaty, L Grenouillet, ...
2020 IEEE International Electron Devices Meeting (IEDM), 36.5. 1-36.5. 4, 2020
54 2020 Demonstration of BEOL-compatible ferroelectric Hf T Francois, L Grenouillet, J Coignus, P Blaise, C Carabasse, N Vaxelaire
IEDM Tech. Dig, 15.7, 2019
49 2019 Nanosecond laser anneal (NLA) for Si-implanted HfO2 ferroelectric memories integrated in back-end of line (BEOL) L Grenouillet, T Francois, J Coignus, S Kerdiles, N Vaxelaire, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
46 2020 FDSOI CMOS devices featuring dual strained channel and thin BOX extendable to the 10nm node Q Liu, B DeSalvo, P Morin, N Loubet, S Pilorget, F Chafik, S Maitrejean, ...
2014 IEEE International Electron Devices Meeting, 9.1. 1-9.1. 4, 2014
38 2014 Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf0. 5Zr0. 5O2 and Si: HfO2-based MFM capacitors T Francois, L Grenouillet, J Coignus, N Vaxelaire, C Carabasse, ...
Applied Physics Letters 118 (6), 2021
37 2021 A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies B DeSalvo, P Morin, M Pala, G Ghibaudo, O Rozeau, Q Liu, A Pofelski, ...
2014 IEEE international electron devices meeting, 7.2. 1-7.2. 4, 2014
35 2014 
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