| Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy CW Liu, JJ Dai, SK Wu, NQ Diep, SH Huynh, TT Mai, HC Wen, CT Yuan, ... Scientific reports 10 (1), 12972, 2020 | 41 | 2020 |
| Screw-dislocation-driven growth mode in two dimensional GaSe on GaAs (001) substrates grown by molecular beam epitaxy NQ Diep, CW Liu, SK Wu, WC Chou, SH Huynh, EY Chang Scientific reports 9 (1), 17781, 2019 | 27 | 2019 |
| Pressure induced structural phase crossover of a GaSe epilayer grown under screw dislocation driven mode and its phase recovery NQ Diep, SK Wu, CW Liu, SH Huynh, WC Chou, CM Lin, DZ Zhang, ... Scientific reports 11 (1), 19887, 2021 | 13 | 2021 |
| Molecular beam epitaxy of two-dimensional GaTe nanostructures on GaAs (001) substrates: implication for near-infrared photodetection SH Huynh, NQ Diep, TV Le, SK Wu, CW Liu, DL Nguyen, HC Wen, ... ACS Applied Nano Materials 4 (9), 8913-8921, 2021 | 12 | 2021 |
| Structural and surface characterizations of 2D β-In2Se3/3D β-Ga2O3 heterostructures grown on c-Sapphire substrates by molecular beam epitaxy UR Nallasani, SK Wu, NQ Diep, YY Lin, HC Wen, WC Chou, CH Chia Scientific reports 14 (1), 5146, 2024 | 5 | 2024 |
| Monotonous alloying-driven band edge emission in two-dimensional hexagonal GaSe 1− x Te x semiconductors for visible to near-infrared photodetection NQ Diep, YX Chen, DL Nguyen, MN Duong, SK Wu, CW Liu, HC Wen, ... Journal of Materials Chemistry C 11 (5), 1772-1781, 2023 | 5 | 2023 |
| Growth mode transition in two-dimensional GaSe on three-dimensional GaN/sapphire platform: implication for self-powered photodetection NQ Diep, QT Tran, TBT Huynh, HC Wen, WC Chou, SH Huynh, VQ Le, ... ACS Applied Nano Materials 7 (3), 3042-3049, 2024 | 3 | 2024 |
| Molecular Beam Epitaxy of Mixed Dimensional InGaSe/GaSe Hybrid Heterostructures on C-Sapphire QT Tran, TBT Huynh, TH Pham, UR Nallasani, HJ Wang, NQ Diep, ... ACS Applied Electronic Materials 6 (10), 7448-7455, 2024 | | 2024 |
| Screw-Dislocation-Driven Growth Mode and Optical Properties of Two-Dimensional Gallium Selenide on Gallium Arsenide (001) by Molecular Beam Epitaxy NQ Diep PQDT-Global, 2019 | | 2019 |
| 以分子束磊晶成長二維硒化鎵在砷化鎵 (001) 之螺旋差排生長模式和光學特性 NHUQ DIEP 交通大學電子物理系所學位論文, 1-49, 2019 | | 2019 |
Sa Hoang HuynhPh.D, Senior Engineer, MBE Center, IQE plcGeverifieerd e-mailadres voor iqep.com