Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p -type GaN RH Horng, DS Wuu, YC Lien, WH Lan
Applied Physics Letters 79 (18), 2925-2927, 2001
231 2001 Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates DS Wuu, WK Wang, WC Shih, RH Horng, CE Lee, WY Lin, JS Fang
IEEE Photonics technology letters 17 (2), 288-290, 2005
215 2005 Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template DS Wuu, WK Wang, KS Wen, SC Huang, SH Lin, SY Huang, CF Lin, ...
Applied Physics Letters 89 (16), 2006
196 2006 GaN-based light-emitting diodes with indium tin oxide texturing window layers using natural lithography RH Horng, CC Yang, JY Wu, SH Huang, CE Lee, DS Wuu
Applied Physics Letters 86 (22), 2005
176 2005 High-quality InGaN∕ GaN heterojunctions and their photovoltaic effects X Zheng, RH Horng, DS Wuu, MT Chu, WY Liao, MH Wu, RM Lin, YC Lu
Applied Physics Letters 93 (26), 2008
152 2008 An efficient and stable photoelectrochemical system with 9% solar-to-hydrogen conversion efficiency via InGaP/GaAs double junction P Varadhan, HC Fu, YC Kao, RH Horng, JH He
Nature communications 10 (1), 5282, 2019
148 2019 Fabrication of pyramidal patterned sapphire substrates for high-efficiency InGaN-based light emitting diodes DS Wuu, WK Wang, KS Wen, SC Huang, SH Lin, RH Horng, YS Yu, ...
Journal of The Electrochemical Society 153 (8), G765, 2006
146 2006 Growth and etching characteristics of gallium oxide thin films by pulsed laser deposition SL Ou, DS Wuu, YC Fu, SP Liu, RH Horng, L Liu, ZC Feng
Materials Chemistry and Physics 133 (2-3), 700-705, 2012
141 2012 High-bandwidth green semipolar (20–21) InGaN/GaN micro light-emitting diodes for visible light communication SWH Chen, YM Huang, YH Chang, Y Lin, FJ Liou, YC Hsu, J Song, ...
Acs Photonics 7 (8), 2228-2235, 2020
136 2020 Improved conversion efficiency of GaN/InGaN thin-film solar cells RH Horng, ST Lin, YL Tsai, MT Chu, WY Liao, MH Wu, RM Lin, YC Lu
IEEE Electron Device Letters 30 (7), 724-726, 2009
131 2009 Improvements of permeation barrier coatings using encapsulated parylene interlayers for flexible electronic applications TN Chen, DS Wuu, CC Wu, CC Chiang, YP Chen, RH Horng
Plasma Processes and Polymers 4 (2), 180-185, 2007
126 2007 High-performance transparent barrier films of SiOx∕ SiNx stacks on flexible polymer substrates TN Chen, DS Wuu, CC Wu, CC Chiang, YP Chen, RH Horng
Journal of the Electrochemical Society 153 (10), F244, 2006
125 2006 See-Through Solar-Blind Photodetectors for Use in Harsh Environments TC Wei, DS Tsai, P Ravadgar, JJ Ke, ML Tsai, DH Lien, CY Huang, ...
IEEE Journal of Selected Topics in Quantum Electronics 20 (6), 112-117, 2014
116 2014 Thermal annealing effect on material characterizations of β-Ga2O3 epilayer grown by metal organic chemical vapor deposition CY Huang, RH Horng, DS Wuu, LW Tu, HS Kao
Applied Physics Letters 102 (1), 2013
103 2013 The diagram of feedback regimes revisited S Donati, RH Horng
IEEE Journal of selected topics in quantum electronics 19 (4), 1500309-1500309, 2012
103 2012 High-power GaN-mirror-Cu light-emitting diodes for vertical current injection using laser liftoff and electroplating techniques WY Lin, DS Wuu, KF Pan, SH Huang, CE Lee, WK Wang, SC Hsu, YY Su, ...
IEEE photonics technology letters 17 (9), 1809-1811, 2005
102 2005 Tunability of p- and n-channel TiOx thin film transistors WC Peng, YC Chen, JL He, SL Ou, RH Horng, DS Wuu
Scientific reports 8 (1), 9255, 2018
98 2018 Microdisplays: mini‐LED, micro‐OLED, and micro‐LED WC Miao, FH Hsiao, Y Sheng, TY Lee, YH Hong, CW Tsai, HL Chen, ...
Advanced Optical Materials 12 (7), 2300112, 2024
97 2024 Properties of SiO2-like barrier layers on polyethersulfone substrates by low-temperature plasma-enhanced chemical vapor deposition DS Wuu, WC Lo, LS Chang, RH Horng
Thin Solid Films 468 (1-2), 105-108, 2004
97 2004 Light emitting diode with a metal-coated reflective permanent substrate and the method for manufacturing the same KH Chang, KC Lin, RH Horng, MF Huang, DS Wuu, SC Wei
US Patent 6,287,882, 2001
95 2001