γ-GeSe: a new hexagonal polymorph from group IV–VI monochalcogenides S Lee, JE Jung, H Kim, Y Lee, JM Park, J Jang, S Yoon, A Ghosh, M Kim, ... Nano letters 21 (10), 4305-4313, 2021 | 79 | 2021 |
Nonvolatile and Neuromorphic Memory Devices Using Interfacial Traps in Two-Dimensional WSe2/MoTe2 Stack Channel S Park, Y Jeong, HJ Jin, J Park, H Jang, S Lee, W Huh, H Cho, HG Shin, ... ACS nano 14 (9), 12064-12071, 2020 | 52 | 2020 |
Nitrogen-Plasma-Treated Continuous Monolayer MoS2 for Improving Hydrogen Evolution Reaction AD Nguyen, TK Nguyen, CT Le, S Kim, F Ullah, Y Lee, S Lee, K Kim, ... ACS omega 4 (25), 21509-21515, 2019 | 43 | 2019 |
Fabrication and imaging of monolayer phosphorene with preferred edge configurations via graphene-assisted layer-by-layer thinning Y Lee, S Lee, JY Yoon, J Cheon, HY Jeong, K Kim Nano letters 20 (1), 559-566, 2019 | 31 | 2019 |
STEM Image Analysis Based on Deep Learning: Identification of Vacancy Defects and Polymorphs of MoS2 K Lee, J Park, S Choi, Y Lee, S Lee, J Jung, JY Lee, F Ullah, Z Tahir, ... Nano letters 22 (12), 4677-4685, 2022 | 30 | 2022 |
Versatile solution‐processed organic–inorganic hybrid superlattices for ultraflexible and transparent high‐performance optoelectronic devices MN Le, KJ Baeg, KT Kim, SH Kang, BD Choi, CY Park, SP Jeon, S Lee, ... Advanced Functional Materials 31 (29), 2103285, 2021 | 28 | 2021 |
Tailoring single-and double-sided fluorination of bilayer graphene via substrate interactions J Son, H Ryu, J Kwon, S Huang, J Yu, J Xu, K Watanabe, T Taniguchi, E Ji, ... Nano letters 21 (2), 891-898, 2020 | 28 | 2020 |
Engineering MoSe2/MoS2 heterojunction traps in 2D transistors for multilevel memory, multiscale display, and synaptic functions Y Jeong, HJ Lee, J Park, S Lee, HJ Jin, S Park, H Cho, S Hong, T Kim, ... npj 2D Materials and Applications 6 (1), 23, 2022 | 25 | 2022 |
Quaternary NAND Logic and Complementary Ternary Inverter with p‐MoTe2/n‐MoS2 Heterostack Channel Transistors S Park, HJ Lee, W Choi, HJ Jin, H Cho, Y Jeong, S Lee, K Kim, S Im Advanced Functional Materials 32 (13), 2108737, 2022 | 20 | 2022 |
Selective Growth and Robust Valley Polarization of Bilayer 3R-MoS2 F Ullah, JH Lee, Z Tahir, A Samad, CT Le, J Kim, D Kim, MU Rashid, ... ACS Applied Materials & Interfaces 13 (48), 57588-57596, 2021 | 20 | 2021 |
Universal oriented van der Waals epitaxy of 1D cyanide chains on hexagonal 2D crystals Y Lee, J Koo, S Lee, JY Yoon, K Kim, M Jang, J Jang, J Choe, BW Li, ... Advanced Science 7 (4), 1900757, 2020 | 17 | 2020 |
Atomically sharp, closed bilayer phosphorene edges by self-passivation S Lee, Y Lee, LP Ding, K Lee, F Ding, K Kim ACS nano 16 (8), 12822-12830, 2022 | 16 | 2022 |
Time-resolved imaging and analysis of the electron beam-induced formation of an open-cage metallo-azafullerene H Hoelzel, S Lee, KY Amsharov, N Jux, K Harano, E Nakamura, ... Nature Chemistry 15 (10), 1444-1451, 2023 | 15 | 2023 |
In-plane and out-of-plane excitonic coupling in 2D molecular crystals D Kim, S Lee, J Park, J Lee, HC Choi, K Kim, S Ryu Nature communications 14 (1), 2736, 2023 | 14 | 2023 |
Bowing-alleviated continuous bandgap engineering of wafer-scale WS2xSe2(1-x) monolayer alloys and their assembly into hetero-multilayers HS Kang, JH Kang, S Lee, K Lee, DH Koo, YS Kim, YJ Hong, YJ Kim, ... NPG Asia Materials 14 (1), 90, 2022 | 14 | 2022 |
Electrical Transport Properties Driven by Unique Bonding Configuration in γ-GeSe J Jang, J Kim, D Sung, JH Kim, JE Jung, S Lee, J Park, C Lee, H Bae, ... Nano letters 23 (8), 3144-3151, 2023 | 13 | 2023 |
Ultrathin Gate Dielectric Enabled by Nanofog Aluminum Oxide on Monolayer MoS2 JS Ko, Z Zhang, S Lee, M Jaikissoon, RKA Bennett, K Kim, AC Kummel, ... ESSDERC 2023-IEEE 53rd European Solid-State Device Research Conference …, 2023 | 8 | 2023 |
5 nm Ultrathin Crystalline Ferroelectric P(VDF‐TrFE)‐Brush Tuned for Hysteresis‐Free Sub 60 mV dec−1 Negative‐Capacitance Transistors H Cho, HJ Jin, S Lee, S Jeon, Y Cho, S Park, M Jang, LJ Widiapradja, ... Advanced Materials 35 (22), 2300478, 2023 | 8 | 2023 |
Single-crystalline metallic films induced by van der Waals epitaxy on black phosphorus Y Lee, H Kim, TK Yun, JC Kim, S Lee, SJ Yang, M Jang, D Kim, H Ryu, ... Chemistry of Materials 33 (10), 3593-3601, 2021 | 8 | 2021 |
Mechanical removal of surface residues on graphene for TEM characterizations DG Kim, S Lee, K Kim Applied Microscopy 50, 1-6, 2020 | 8 | 2020 |