Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well L Grenouillet, C Bru-Chevallier, G Guillot, P Gilet, P Duvaut, C Vannuffel, ...
Applied Physics Letters 76 (16), 2241-2243, 2000
261 2000 Optical interconnects L Pavesi, G Guillot
Springer series in optical sciences 119, 2006
232 2006 Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications A Spisser, R Ledantec, C Seassal, JL Leclercq, T Benyattou, D Rondi, ...
IEEE Photonics technology letters 10 (9), 1259-1261, 2002
193 2002 Application of 3C-SiC quantum dots for living cell imaging J Botsoa, V Lysenko, A Geloen, O Marty, JM Bluet, G Guillot
Applied Physics Letters 92 (17), 2008
191 2008 From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001) M Gendry, C Monat, J Brault, P Regreny, G Hollinger, B Salem, G Guillot, ...
Journal of applied physics 95 (9), 4761-4766, 2004
111 2004 How to grow cubic GaN with low hexagonal phase content on (001) SiC by molecular beam epitaxy B Daudin, G Feuillet, J Hübner, Y Samson, F Widmann, A Philippe, ...
Journal of applied physics 84 (4), 2295-2300, 1998
96 1998 Optical properties of silicon nanocrystal LEDs J De La Torre, A Souifi, A Poncet, C Busseret, M Lemiti, G Bremond, ...
Physica E: Low-dimensional Systems and Nanostructures 16 (3-4), 326-330, 2003
95 2003 Rapid thermal annealing in L Grenouillet, C Bru-Chevallier, G Guillot, P Gilet, P Ballet, P Duvaut, ...
Journal of applied physics 91 (9), 5902-5908, 2002
83 2002 The acceptor level of vanadium in III–V compounds B Clerjaud, C Naud, B Deveaud, B Lambert, B Plot, G Bremond, ...
Journal of applied physics 58 (11), 4207-4215, 1985
83 1985 Simulation of the capacitance–voltage characteristics of a single‐quantum‐well structure based on the self‐consistent solution of the Schrödinger and Poisson equations PN Brounkov, T Benyattou, G Guillot
Journal of applied physics 80 (2), 864-871, 1996
76 1996 Quenching effect of luminescence in bulk semi-insulating GaAs P Leyral, G Vincent, A Nouailhat, G Guillot
Solid State Communications 42 (1), 67-69, 1982
71 1982 Study of trapping phenomenon in 4H-SiC MESFETs: Dependence on substrate purity N Sghaier, JM Bluet, A Souifi, G Guillot, E Morvan, C Brylinski
IEEE Transactions on Electron Devices 50 (2), 297-302, 2003
67 2003 Experimental and theoretical investigation of carrier confinement in InAs quantum dashes grown on InP (001) P Miska, J Even, C Platz, B Salem, T Benyattou, C Bru-Chevalier, ...
Journal of applied physics 95 (3), 1074-1080, 2004
65 2004 Tunable microcavity based on InP-air Bragg mirrors R Le Dantec, T Benyattou, G Guillot, A Spisser, C Seassal, JL Leclercq, ...
IEEE journal of selected topics in quantum electronics 5 (1), 111-114, 1999
64 1999 1.54 μm room‐temperature electroluminescence of erbium‐doped GaAs and GaAlAs grown by molecular beam epitaxy P Galtier, JP Pocholle, MN Charasse, B De Cremoux, JP Hirtz, B Groussin, ...
Applied physics letters 55 (20), 2105-2107, 1989
63 1989 Interpretation of deep-level optical spectroscopy and deep-level transient spectroscopy data: application to irradiation defects in GaAs S Loualiche, A Nouailhat, G Guillot, M Lannoo
Physical Review B 30 (10), 5822, 1984
63 1984 Discharge mechanisms modeling in LPCVD silicon nanocrystals usingC–Vand capacitance transient techniques C Busseret, A Souifi, T Baron, G Guillot, F Martin, MN Semeria, J Gautier
Superlattices and Microstructures 28 (5-6), 493-500, 2000
62 2000 Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices T Baron, F Martin, P Mur, C Wyon, M Dupuy, C Busseret, A Souifi, ...
Applied surface science 164 (1-4), 29-34, 2000
62 2000 Deep level spectroscopy in InP: Fe G Bremond, A Nouailhat, G Guillot, B Cockayne
Electronics Letters 17 (1), 55-56, 1981
62 1981 Influence of the interfacial chemical environment on the luminescence of 3C SiC nanoparticles Y Zakharko, J Botsoa, S Alekseev, V Lysenko, JM Bluet, O Marty, ...
Journal of Applied Physics 107 (1), 2010
61 2010 
Georges BremondProfesseur, INSA LyonGeverifieerd e-mailadres voor insa-lyon.fr
