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ESRA EVCİN BAYDİLLİ
ESRA EVCİN BAYDİLLİ
Hakkari Üniversitesi
Geverifieerd e-mailadres voor hakkari.edu.tr
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Evaluation of gamma-irradiation effects on the electrical properties of Al/(ZnO-PVA)/p-Si type Schottky diodes using current-voltage measurements
A Kaymaz, EE Baydilli, HU Tecimer, Ş Altındal, Y Azizian-Kalandaragh
Radiation Physics and Chemistry 183, 109430, 2021
392021
Detection of current transport mechanisms for graphene-doped-PVA interlayered metal/semiconductor structures
EE Baydilli, SO Tan, HU Tecimer, Ş Altındal
Physica B: Condensed Matter 598, 412457, 2020
212020
Investigation of gamma-irradiation effects on electrical characteristics of Al/(ZnO–PVA)/p-Si Schottky diodes using capacitance and conductance measurements
A Kaymaz, H Uslu Tecimer, E Evcin Baydilli, Ş Altındal
Journal of Materials Science: Materials in Electronics 31, 8349-8358, 2020
192020
Determination of temperature sensitivity and current-transport mechanisms of the GaAs-based MS contact
A Kaymaz, EE Baydilli, H Tecimer, HU Tecimer, Ş Altındal
Materials Today Communications 35, 106380, 2023
132023
On the multi-parallel diodes model in Au/PVA/n-GaAs Schottky diodes and investigation of conduction mechanisms (CMs) in a temperature range of 80–360 K
E Evcin Baydilli, A Kaymaz, H Uslu Tecimer, Ş Altındal
Journal of Electronic Materials 49, 7427-7434, 2020
122020
The determination of the temperature and voltage dependence of the main device parameters of Au/7% Gr-doped PVA/n-GaAs-type Schottky Diode (SD)
E Evcin Baydilli, Ş Altındal, H Tecimer, A Kaymaz, H Uslu Tecimer
Journal of Materials Science: Materials in Electronics 31, 17147-17157, 2020
102020
Investigation of the dielectric properties of Au/Bi4Ti3O12-SiO2/n-Si (MFIS) type structures depending on gamma-irradiation
EE Baydilli
Microelectronics Reliability 140, 114868, 2023
42023
Overview of the irradiation-dependent behaviour of the negative dielectric properties of GaAs-based MIS devices
EE Baydilli, A Kaymaz, Ş Altındal
Radiation Physics and Chemistry, 111877, 2024
22024
The effect of Cu-doping to the DLC interlayer on the temperature dependent current-conduction mechanisms and barrier shape of the Schottky devices
EE Baydilli
Materials Science in Semiconductor Processing 184, 108828, 2024
12024
The Role of Co/Zn-Doped Organic Interlayer on the Operating Performance of Schottky Devices as an Ionizing Radiation Sensor
A Kaymaz, EE Baydilli
IEEE Sensors Journal, 2024
12024
Overview of the irradiation-dependent behaviour of the negative dielectric properties of GaAs-based MIS devices
E EVCİN BAYDİLLİ, A Kaymaz, Ş ALTINDAL
Radiation Physics and Chemistry 222, 2024
2024
THE INVESTIGATIONS OF TEMPERATURE DEPENDENT CURRENT-TRANSPORT MECHANISMS WITH PURE AND GRAPHENE DOPED PVA INTERFACE LAYER METAL-SEMICONDUCTURE DIODE
E EVCİN BAYDİLLİ
2020
Comparison of the Current-Transport Mechanisms and the Temperature Sensitivities of Gaas-Based Ms Contacts and Some Interfacial Layered Mps Devices
A Kaymaz, E Evcin Baydilli, H Tecimer, H Uslu Tecimer, Ş Altındal
Available at SSRN 4436040, 0
The Comparison of the Temperature Susceptibility of the Serial Resistance Effect of Au/n-GaAs Type M/S Structures
EE Baydilli
Gazi University Journal of Science Part A: Engineering and Innovation 10 (1 …, 0
Fabrication and characterization of Bİ-2212 superconducting seramic thin films
E Evcin Baydilli
Fen Bilimleri Enstitüsü, 0
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Artikelen 1–15