Evaluation of gamma-irradiation effects on the electrical properties of Al/(ZnO-PVA)/p-Si type Schottky diodes using current-voltage measurements A Kaymaz, EE Baydilli, HU Tecimer, Ş Altındal, Y Azizian-Kalandaragh Radiation Physics and Chemistry 183, 109430, 2021 | 39 | 2021 |
Detection of current transport mechanisms for graphene-doped-PVA interlayered metal/semiconductor structures EE Baydilli, SO Tan, HU Tecimer, Ş Altındal Physica B: Condensed Matter 598, 412457, 2020 | 21 | 2020 |
Investigation of gamma-irradiation effects on electrical characteristics of Al/(ZnO–PVA)/p-Si Schottky diodes using capacitance and conductance measurements A Kaymaz, H Uslu Tecimer, E Evcin Baydilli, Ş Altındal Journal of Materials Science: Materials in Electronics 31, 8349-8358, 2020 | 19 | 2020 |
Determination of temperature sensitivity and current-transport mechanisms of the GaAs-based MS contact A Kaymaz, EE Baydilli, H Tecimer, HU Tecimer, Ş Altındal Materials Today Communications 35, 106380, 2023 | 13 | 2023 |
On the multi-parallel diodes model in Au/PVA/n-GaAs Schottky diodes and investigation of conduction mechanisms (CMs) in a temperature range of 80–360 K E Evcin Baydilli, A Kaymaz, H Uslu Tecimer, Ş Altındal Journal of Electronic Materials 49, 7427-7434, 2020 | 12 | 2020 |
The determination of the temperature and voltage dependence of the main device parameters of Au/7% Gr-doped PVA/n-GaAs-type Schottky Diode (SD) E Evcin Baydilli, Ş Altındal, H Tecimer, A Kaymaz, H Uslu Tecimer Journal of Materials Science: Materials in Electronics 31, 17147-17157, 2020 | 10 | 2020 |
Investigation of the dielectric properties of Au/Bi4Ti3O12-SiO2/n-Si (MFIS) type structures depending on gamma-irradiation EE Baydilli Microelectronics Reliability 140, 114868, 2023 | 4 | 2023 |
Overview of the irradiation-dependent behaviour of the negative dielectric properties of GaAs-based MIS devices EE Baydilli, A Kaymaz, Ş Altındal Radiation Physics and Chemistry, 111877, 2024 | 2 | 2024 |
The effect of Cu-doping to the DLC interlayer on the temperature dependent current-conduction mechanisms and barrier shape of the Schottky devices EE Baydilli Materials Science in Semiconductor Processing 184, 108828, 2024 | 1 | 2024 |
The Role of Co/Zn-Doped Organic Interlayer on the Operating Performance of Schottky Devices as an Ionizing Radiation Sensor A Kaymaz, EE Baydilli IEEE Sensors Journal, 2024 | 1 | 2024 |
Overview of the irradiation-dependent behaviour of the negative dielectric properties of GaAs-based MIS devices E EVCİN BAYDİLLİ, A Kaymaz, Ş ALTINDAL Radiation Physics and Chemistry 222, 2024 | | 2024 |
THE INVESTIGATIONS OF TEMPERATURE DEPENDENT CURRENT-TRANSPORT MECHANISMS WITH PURE AND GRAPHENE DOPED PVA INTERFACE LAYER METAL-SEMICONDUCTURE DIODE E EVCİN BAYDİLLİ | | 2020 |
Comparison of the Current-Transport Mechanisms and the Temperature Sensitivities of Gaas-Based Ms Contacts and Some Interfacial Layered Mps Devices A Kaymaz, E Evcin Baydilli, H Tecimer, H Uslu Tecimer, Ş Altındal Available at SSRN 4436040, 0 | | |
The Comparison of the Temperature Susceptibility of the Serial Resistance Effect of Au/n-GaAs Type M/S Structures EE Baydilli Gazi University Journal of Science Part A: Engineering and Innovation 10 (1 …, 0 | | |
Fabrication and characterization of Bİ-2212 superconducting seramic thin films E Evcin Baydilli Fen Bilimleri Enstitüsü, 0 | | |