| Room-temperature sub-band gap optoelectronic response of hyperdoped silicon JP Mailoa, AJ Akey, CB Simmons, D Hutchinson, J Mathews, JT Sullivan, ... Nature communications 5 (1), 3011, 2014 | 264 | 2014 |
| Direct-gap photoluminescence with tunable emission wavelength in Ge1− ySny alloys on silicon J Mathews, RT Beeler, J Tolle, C Xu, R Roucka, J Kouvetakis, ... Applied physics letters 97 (22), 2010 | 236 | 2010 |
| Extended performance GeSn/Si (100) pin photodetectors for full spectral range telecommunication applications J Mathews, R Roucka, J Xie, SQ Yu, J Menéndez, J Kouvetakis Applied physics letters 95 (13), 2009 | 235 | 2009 |
| Electromagnetically induced transparency control in terahertz metasurfaces based on bright-bright mode coupling R Yahiaoui, JA Burrow, SM Mekonen, A Sarangan, J Mathews, I Agha, ... Physical Review B 97 (15), 155403, 2018 | 206 | 2018 |
| Direct gap electroluminescence from Si/Ge1− ySny pin heterostructure diodes R Roucka, J Mathews, RT Beeler, J Tolle, J Kouvetakis, J Menendez Applied physics letters 98 (6), 2011 | 133 | 2011 |
| Compositional dependence of the direct and indirect band gaps in Ge1− ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover … L Jiang, JD Gallagher, CL Senaratne, T Aoki, J Mathews, J Kouvetakis, ... Semiconductor Science and Technology 29 (11), 115028, 2014 | 128 | 2014 |
| Sn-alloying as a means of increasing the optical absorption of Ge at the C-and L-telecommunication bands VR D'Costa, Y Fang, J Mathews, R Roucka, J Tolle, J Menéndez, ... Semiconductor science and technology 24 (11), 115006, 2009 | 124 | 2009 |
| High-performance near-IR photodiodes: a novel chemistry-based approach to Ge and Ge–Sn devices integrated on silicon R Roucka, J Mathews, R Beeler, J Tolle, J Menéndez, J Kouvetakis IEEE Journal of Quantum Electronics 47 (2), 213-222, 2011 | 106 | 2011 |
| Direct versus indirect optical recombination in Ge films grown on Si substrates G Grzybowski, R Roucka, J Mathews, L Jiang, RT Beeler, J Kouvetakis, ... Physical Review B—Condensed Matter and Materials Physics 84 (20), 205307, 2011 | 93 | 2011 |
| Supersaturating silicon with transition metals by ion implantation and pulsed laser melting D Recht, MJ Smith, S Charnvanichborikarn, JT Sullivan, MT Winkler, ... Journal of Applied Physics 114 (12), 2013 | 83 | 2013 |
| Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si (100) R Roucka, R Beeler, J Mathews, MY Ryu, Y Kee Yeo, J Menéndez, ... Journal of Applied Physics 109 (10), 2011 | 57 | 2011 |
| Photoluminescence from heavily doped GeSn: P materials grown on Si (100) G Grzybowski, L Jiang, J Mathews, R Roucka, C Xu, RT Beeler, ... Applied Physics Letters 99 (17), 2011 | 51 | 2011 |
| Ge1− ySny photoconductor structures at 1.55 μm: From advanced materials to prototype devices R Roucka, J Xie, J Kouvetakis, J Mathews, V D’costa, J Menendez, J Tolle, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 50 | 2008 |
| Polarization-dependent electromagnetic responses of ultrathin and highly flexible asymmetric terahertz metasurfaces JA Burrow, R Yahiaoui, A Sarangan, I Agha, J Mathews, TA Searles Optics Express 25 (26), 32540-32549, 2017 | 41 | 2017 |
| Comparative study of InGaAs integration on bulk Ge and virtual Ge/Si (1 0 0) substrates for low-cost photovoltaic applications R Beeler, J Mathews, J Tolle, R Roucka, AVG Chizmeshya, R Juday, ... Solar Energy Materials and Solar Cells 94 (12), 2362-2370, 2010 | 41 | 2010 |
| Hyperdoping of Si by ion implantation and pulsed laser melting W Yang, J Mathews, JS Williams Materials Science in Semiconductor Processing 62, 103-114, 2017 | 40 | 2017 |
| Practical materials chemistry approaches for tuning optical and structural properties of group IV semiconductors and prototype photonic devices J Kouvetakis, J Mathews, R Roucka, AVG Chizmeshya, J Tolle, ... IEEE Photonics Journal 2 (6), 924-941, 2010 | 34 | 2010 |
| On the limits to Ti incorporation into Si using pulsed laser melting J Mathews, AJ Akey, D Recht, G Malladi, H Efstathiadis, MJ Aziz, ... Applied Physics Letters 104 (11), 2014 | 33 | 2014 |
| All-optical switching via four-wave mixing Bragg scattering in a silicon platform Y Zhao, D Lombardo, J Mathews, I Agha Apl Photonics 2 (2), 2017 | 29 | 2017 |
| Dynamically tunable single-layer VO2/metasurface based THz cross-polarization converter R Yahiaoui, ZA Chase, C Kyaw, E Seabron, J Mathews, TA Searles Journal of Physics D: Applied Physics 54 (23), 235101, 2021 | 28 | 2021 |
