Nucleation of ``Hut'' Pits and Clusters during Gas-Source Molecular-Beam Epitaxy of Ge/Si(001) in In Situ Scanning Tunnelng Microscopy I Goldfarb, PT Hayden, JHG Owen, GAD Briggs
Physical review letters 78 (20), 3959, 1997
142 1997 Bismuth-induced structures on Si (001) surfaces K Miki, JHG Owen, DR Bowler, GAD Briggs, K Sakamoto
Surface science 421 (3), 397-418, 1999
130 1999 Stress relief as the driving force for self-assembled Bi nanolines JHG Owen, K Miki, H Koh, HW Yeom, DR Bowler
Physical review letters 88 (22), 226104, 2002
129 2002 Self-assembled nanowires on semiconductor surfaces JHG Owen, K Miki, DR Bowler
Journal of materials science 41, 4568-4603, 2006
121 2006 Atomically perfect bismuth lines on Si (001) K Miki, DR Bowler, JHG Owen, GAD Briggs, K Sakamoto
Physical Review B 59 (23), 14868, 1999
121 1999 Surface reconstructions for InAs (001) studied with density-functional theory and STM C Ratsch, W Barvosa-Carter, F Grosse, JHG Owen, JJ Zinck
Physical Review B 62 (12), R7719, 2000
117 2000 Competing growth mechanisms of Ge/Si (001) coherent clusters I Goldfarb, PT Hayden, JHG Owen, GAD Briggs
Physical Review B 56 (16), 10459, 1997
102 1997 Hydrogen diffusion on Si (001) JHG Owen, DR Bowler, CM Goringe, K Miki, GAD Briggs
Physical Review B 54 (19), 14153, 1996
101 1996 Controlling the atomic layer deposition of titanium dioxide on silicon: dependence on surface termination S McDonnell, RC Longo, O Seitz, JB Ballard, G Mordi, D Dick, JHG Owen, ...
The Journal of Physical Chemistry C 117 (39), 20250-20259, 2013
83 2013 Selectivity of metal oxide atomic layer deposition on hydrogen terminated and oxidized Si (001)-(2× 1) surface RC Longo, S McDonnell, D Dick, RM Wallace, YJ Chabal, JHG Owen, ...
Journal of Vacuum Science & Technology B 32 (3), 2014
64 2014 Scanning tunneling microscopy study of benzene adsorption on KW Self, RI Pelzel, JHG Owen, C Yan, W Widdra, WH Weinberg
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16 (3 …, 1998
63 1998 Identification of the Si (001) missing dimer defect structure by low bias voltage STM and LDA modelling JHG Owen, DR Bowler, CM Goringe, K Miki, GAD Briggs
Surface science 341 (3), L1042-L1047, 1995
61 1995 Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si (001) I Goldfarb, JHG Owen, PT Hayden, DR Bowler, K Miki, GAD Briggs
Surface science 394 (1-3), 105-118, 1997
50 1997 Gas-source growth of group IV semiconductors: II. Growth regimes and the effect of hydrogen JHG Owen, K Miki, DR Bowler, CM Goringe, I Goldfarb, GAD Briggs
Surface science 394 (1-3), 91-104, 1997
47 1997 Next generation of extreme-resolution electron beam lithography JN Randall, JHG Owen, J Lake, E Fuchs
Journal of Vacuum Science & Technology B 37 (6), 2019
46 2019 Multimode hydrogen depassivation lithography: A method for optimizing atomically precise write times JB Ballard, TW Sisson, JHG Owen, WR Owen, E Fuchs, J Alexander, ...
Journal of Vacuum Science & Technology B 31 (6), 2013
46 2013 Interaction between electronic structure and strain in Bi nanolines on Si (0 0 1) JHG Owen, K Miki, DR Bowler
Surface Science 527 (1-3), L177-L183, 2003
45 2003 Bi nanoline passivity to attack by radical hydrogen or oxygen JHG Owen, DR Bowler, K Miki
Surface science 499 (1), L124-L128, 2002
43 2002 Molecular interactions and decomposition pathways of DR Bowler, JHG Owen
Physical Review B—Condensed Matter and Materials Physics 75 (15), 155310, 2007
41 2007 Atomic scale structure of InAs (001)-(2× 4) steady-state surfaces determined by scanning tunneling microscopy and density functional theory W Barvosa-Carter, RS Ross, C Ratsch, F Grosse, JHG Owen, JJ Zinck
Surface science 499 (1), L129-L134, 2002
41 2002 