| From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices K Woo, Z Bian, M Noshin, RP Martinez, M Malakoutian, B Shankar, ... Journal of Physics: Materials 7 (2), 022003, 2024 | 23 | 2024 |
| A review of GaN RF devices and power amplifiers for 5G communication applications H Lu, M Zhang, L Yang, B Hou, RP Martinez, M Mi, J Du, L Deng, M Wu, ... Fundamental Research, 2023 | 21 | 2023 |
| Design of Ka-band Doherty power amplifier using 0.15 μmd GaN on SiC process based on novel complex load modulation X Zhou, S Chowdhury, RP Martinez, B Shankar 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 14 | 2021 |
| Development of high-voltage vertical GaN PN diodes RJ Kaplar, BP Gunning, AA Allerman, MH Crawford, JD Flicker, ... 2020 IEEE International Electron Devices Meeting (IEDM), 5.1. 1-5.1. 4, 2020 | 13 | 2020 |
| Hot-Carrier-Damage-Induced Current Gain Enhancement (CGE) Effects in SiGe HBTs US Raghunathan, R Perez Martinez, BR Wier, AP Omprakash, H Ying, ... IEEE Transactions on Electron Devices, 2018 | 13 | 2018 |
| Impact of Diamond Passivation on fT and fmax of mm-wave N-Polar GaN HEMTs X Zhou, M Malakoutian, R Soman, Z Bian, RP Martinez, S Chowdhury IEEE Transactions on Electron Devices 69 (12), 6650-6655, 2022 | 8 | 2022 |
| Study of avalanche behavior in 3 kV GaN vertical PN diode under UIS stress for edge-termination optimization B Shankar, Z Bian, K Zeng, C Meng, RP Martinez, S Chowdhury, ... 2022 IEEE International Reliability Physics Symposium (IRPS), 2B. 2-1-2B. 2-4, 2022 | 8 | 2022 |
| Best practices to quantify linearity performance of GaN HEMTs for power amplifier applications RP Martinez, DJ Munzer, XY Zhou, B Shankar, EM Schmidt, K Wildnauer, ... 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 8 | 2021 |
| Revisiting Safe Operating Area: SiGe HBT Aging Models for Reliability-Aware Circuit Design BR Wier, R Perez Martinez, US Raghunathan, H Ying, ... 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2018 | 7 | 2018 |
| Benchmarking measurement-based large-signal FET models for GaN HEMT devices RP Martinez, M Iwamoto, J Xu, P Pahl, S Chowdhury 2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 69-72, 2023 | 6 | 2023 |
| Assessment and comparison of measurement-based large-signal FET models for GaN HEMTs RP Martinez, M Iwamoto, J Xu, C Gillease, S Cochran, M Culver, ... IEEE Transactions on Microwave Theory and Techniques 72 (5), 2692-2703, 2024 | 5 | 2024 |
| Linearity performance of derivative superposition in GaN HEMTs: A device-to-circuit perspective RP Martinez, DJ Munzer, B Shankar, B Murmann, S Chowdhury IEEE Transactions on Electron Devices 70 (5), 2247-2254, 2023 | 4 | 2023 |
| Visual anomaly detection in video by variational autoencoder F Waseem, RP Martinez, C Wu arXiv preprint arXiv:2203.03872, 2022 | 4 | 2022 |
| Modeling of High-Current Damage in SiGe HBTs Under Pulsed Stress US Raghunathan, B Wier, R Perez Martinez, ZE Fleetwood, A Omprakash, ... Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2016 IEEE, 17-20, 2016 | 4 | 2016 |
| Reliability differences between SiGe HBTs optimized for high-performance and medium-breakdown RP Martinez, US Raghunathan, BR Wier, HP Lee, JD Cressler 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019 | 3 | 2019 |
| Movement of Current Filaments and its Impact on Avalanche Robustness in Vertical GaN P-N diode Under UIS stress B Shankar, K Zeng, B Gunning, RP Martinez, C Meng, J Flicker, A Binder, ... 2022 Device Research Conference (DRC), 1-2, 2022 | 2 | 2022 |
| On-Wafer Investigation of Avalanche Robustness in 1.3 kV GaN-on-GaN PN Diode Under Unclamped Inductive Switching Stress B Shankar, K Zeng, B Gunning, KJ Lee, RP Martinez, C Meng, XY Zhou, ... 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 2 | 2021 |
| Robust Pareto design of GaN HEMTs for millimeter-wave applications RP Martinez, S Boyd, S Chowdhury IEEE Access, 2025 | 1 | 2025 |
| Compact Model Parameter Extraction via Derivative-Free Optimization RP Martinez, M Iwamoto, K Woo, Z Bian, R Tinti, S Boyd, S Chowdhury IEEE Access, 2024 | 1 | 2024 |
| A di/dt triggered self-powered unidirectional dc circuit breaker for both GaN and sic platform for 400 V dc applications B Shankar, RP Martinez, P Zuk, S Chowdhury 2022 IEEE Energy Conversion Congress and Exposition (ECCE), 1-4, 2022 | 1 | 2022 |
Srabanti ChowdhuryStanford UniversityGeverifieerd e-mailadres voor stanford.edu
