Thermal Transport across Ion-Cut Monocrystalline β-Ga2 O3 Thin Films and Bonded β-Ga2 O3 –SiC Interfaces Z Cheng, F Mu, T You, W Xu, J Shi, ME Liao, Y Wang, K Huynh, T Suga, ...
ACS Applied Materials & Interfaces 12 (40), 44943-44951, 2020
99 2020 First Demonstration of Waferscale Heterogeneous Integration of Ga2 O3 MOSFETs on SiC and Si Substrates by Ion-Cutting Process W Xu, Y Wang, T You, X Ou, G Han, H Hu, S Zhang, F Mu, T Suga, ...
2019 IEEE International Electron Devices Meeting (IEDM), 12.5. 1-12.5. 4, 2019
81 2019 β-Ga2 O3 MOSFETs on the Si substrate fabricated by the ion-cutting process YB Wang, WH Xu, TG You, FW Mu, HD Hu, Y Liu, H Huang, T Suga, ...
Science China Physics, Mechanics & Astronomy 63 (7), 277311, 2020
48 2020 Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline β-Ga2O3 thin film on SiC W Xu, T You, Y Wang, Z Shen, K Liu, L Zhang, H Sun, R Qian, Z An, F Mu, ...
Fundamental Research 1 (6), 691-696, 2021
35 2021 Thermal visualization of buried interfaces enabled by ratio signal and steady-state heating of time-domain thermoreflectance Z Cheng, F Mu, X Ji, T You, W Xu, T Suga, X Ou, DG Cahill, S Graham
ACS Applied Materials & Interfaces 13 (27), 31843-31851, 2021
33 2021 Solar-Blind Photodetector Based on Single Crystal Ga2 O3 Film Prepared by a Unique Ion-Cutting Process Q Ren, W Xu, Z Shen, T You, Q Liu, C Liu, L Zhao, L Chen, W Yu
ACS Applied Electronic Materials 3 (1), 451-460, 2020
31 2020 Channel Properties of Ga₂O₃-on-SiC MOSFETs Y Wang, W Xu, G Han, T You, F Mu, H Hu, Y Liu, X Zhang, H Huang, ...
IEEE Transactions on Electron Devices 68 (3), 1185-1189, 2021
27 2021 Recessed-Gate Ga₂O₃-on-SiC MOSFETs Demonstrating a Stable Power Figure of Merit of 100 mW/cm² Up to 200° C Y Wang, G Han, W Xu, T You, H Hu, Y Liu, X Zhang, H Huang, X Ou, X Ma, ...
IEEE transactions on electron devices 69 (4), 1945-1949, 2022
26 2022 The effect of oxygen annealing on characteristics of β-Ga2O3 solar-blind photodetectors on SiC substrate by ion-cutting process Z Shen, W Xu, Y Xu, H Huang, J Lin, T You, J Ye, X Ou
Journal of Alloys and Compounds 889, 161743, 2021
24 2021 Thermodynamics of Ion-Cutting of β-Ga2 O3 and Wafer-Scale Heterogeneous Integration of a β-Ga2 O3 Thin Film onto a Highly Thermal Conductive SiC Substrate W Xu, T You, F Mu, Z Shen, J Lin, K Huang, M Zhou, A Yi, Z Qu, T Suga, ...
ACS Applied Electronic Materials 4 (1), 494-502, 2021
22 2021 Realization of wafer-scale single-crystalline GaN film on CMOS-compatible Si (100) substrate by ion-cutting technique H Shi, K Huang, F Mu, T You, Q Ren, J Lin, W Xu, T Jin, H Huang, A Yi, ...
Semiconductor Science and Technology 35 (12), 125004, 2020
20 2020 Wafer-scale single-crystalline β-Ga2 O3 thin film on SiC substrate by ion-cutting technique with hydrophilic wafer bonding at elevated temperatures Z Shen, W Xu, Y Chen, J Lin, Y Xie, K Huang, T You, G Han, X Ou
Science China Materials 66 (2), 756-763, 2023
18 2023 Temperature-dependent characteristics of Schottky barrier diode on heterogeneous β-Ga2O3( Y Wang, W Xu, G Han, T You, F Mu, H Hu, Y Liu, X Zhang, H Huang, ...
Journal of Physics D: Applied Physics 54 (3), 034004, 2020
18 2020 Heterointegrated Ga2 O3 -on-SiC RF MOSFETs With f T /f max of 47/51 GHz by Ion-Cutting Process X Yu, W Xu, Y Wang, B Qiao, R Shen, J Zhou, Z Li, T You, Z Shen, ...
IEEE Electron Device Letters 44 (12), 1951-1954, 2023
13 2023 High-Voltage β-Ga2 O3 RF MOSFETs With a Shallowly-Implanted 2DEG-Like Channel X Yu, H Gong, J Zhou, Z Shen, W Xu, T You, J Wang, S Zhang, Y Wang, ...
IEEE Electron Device Letters 44 (7), 1060-1063, 2023
11 2023 Gallium oxide (Ga2O3) heterogeneous and heterojunction power devices B Li, Y Wang, Z Luo, W Xu, H Gong, T You, X Ou, J Ye, Y Hao, G Han
Fundamental research, 2023
8 2023 Unique Bias Stress Instability of Heterogeneous Ga2 O3 -on-SiC MOSFET C Liu, Y Wang, W Xu, X Jia, S Huang, Y Li, B Li, Z Luo, C Fang, Y Liu, ...
IEEE Electron Device Letters 44 (8), 1256-1259, 2023
8 2023 Current transport mechanism of lateral Schottky barrier diodes on β-Ga2O3/SiC structure with atomic level interface W Xu, Z Shen, Z Qu, T Zhao, A Yi, T You, G Han, X Ou
Applied Physics Letters 124 (11), 2024
7 2024 Comparative study of the ion-slicing mechanism of Y-cut LiNbO3 K Huang, Z Li, Y Yan, X Zhao, W Li, T You, S Zhang, H Zhou, J Lin, W Xu, ...
AIP Advances 9 (8), 2019
7 2019 Effect of Amorphous Layer at the Heterogeneous Interface on the Device Performance of β-Ga2 O3 /Si Schottky Barrier Diodes Z Qu, W Xu, T You, Z Shen, T Zhao, K Huang, A Yi, DW Zhang, G Han, ...
IEEE Journal of the Electron Devices Society 11, 135-140, 2023
5 2023