| Enhanced Avalanche (2.1 kV, 83 A) in NiO/Ga2O3 Heterojunction by Edge Termination Optimization H Gong, F Zhou, M Xiao, Z Yang, F Ren, S Gu, H Lu, R Zhang, Y Zhang, ... IEEE Electron Device Letters, 2024 | 12 | 2024 |
| Depletion- and Enhancement-Mode p-Channel MISHFET Based on GaN/AlGaN Single Heterostructures on Sapphire Substrates C Beckmann, Z Yang, J Wieben, T Zweipfennig, J Ehrler, A Kirchbrücher, ... IEEE Journal of the Electron Devices Society, 2023 | 11 | 2023 |
| Experimentally validated methodology for real-time temperature cycle tracking in SiC power modules F Stella, O Olanrewaju, Z Yang, A Castellazzi, G Pellegrino Microelectronics Reliability 88, 615-619, 2018 | 11 | 2018 |
| Investigation of Temperature Distribution in SiC Power Module Prototype in Transient Conditions O Olanrewaju, Z Yang, N Evans, A Fayyaz, T Lagier, A Castellazzi 2019 20th International Symposium on Power Electronics (Ee), 1-5, 2019 | 7 | 2019 |
| Switching figure-of-merit, optimal design, and power loss limit of (ultra-) wide bandgap power devices: A perspective M Porter, X Yang, H Gong, B Wang, Z Yang, Y Zhang Applied Physics Letters 125 (11), 2024 | 6 | 2024 |
| MOVPE-grown GaN/AlGaN heterostructures on sapphire with polarization-induced two-dimensional hole gases C Beckmann, J Wieben, T Zweipfennig, A Kirchbrücher, J Ehrler, ... Journal of Physics D: Applied Physics 55 (43), 435102, 2022 | 5 | 2022 |
| Ga2O3/NiO junction barrier Schottky diodes with ultra-low barrier TiN contact H Gong, N Sun, T Hu, X Yu, M Porter, Z Yang, F Ren, S Gu, Y Zheng, ... Applied Physics Letters 124 (23), 2024 | 4 | 2024 |
| Breakdown Voltage and Leakage Current of the Nonuniformly Activated Lightly Doped p-GaN Z Yang, Y Ma, M Porter, H Gong, Z Du, H Wang, Y Luo, L Wang, Y Zhang IEEE Transactions on Electron Devices, 2024 | 2 | 2024 |
| Reliability of NiO/β-Ga2O3 bipolar heterojunction H Gong, X Yang, M Porter, Z Yang, B Wang, L Li, L Fu, K Sasaki, H Wang, ... Applied Physics Letters 126 (1), 2025 | | 2025 |
| First Characterization of Si, SiC and GaN Power Deivces at Deep Cryogenic Temperatures Down to 0.1 K X Yang, M Porter, Z Yang, Z Xi, Q Li, L Shao, Y Zhang 2024 IEEE International Electron Devices Meeting (IEDM), 1-4, 2024 | | 2024 |
| 10 kV, 250°C Operational, Enhancement-Mode Ga2O3 JFET with Charge-Balance and Hybrid-Drain Designs Y Qin, Z Yang, H Gong, AG Jacobs, J Spencer, M Porter, B Wang, ... 2024 IEEE International Electron Devices Meeting (IEDM), 1-4, 2024 | | 2024 |
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