Lateral 1.8 kV 2 O3 MOSFET With 155 MW/cm2 Power Figure of Merit K Tetzner, EB Treidel, O Hilt, A Popp, SB Anooz, G Wagner, A Thies, ...
IEEE Electron Device Letters 40 (9), 1503-1506, 2019
144 2019 Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting R Schewski, K Lion, A Fiedler, C Wouters, A Popp, SV Levchenko, ...
Apl Materials 7 (2), 2019
124 2019 Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE S Bin Anooz, R Grüneberg, C Wouters, R Schewski, M Albrecht, A Fiedler, ...
Applied Physics Letters 116 (18), 2020
95 2020 Bulk single crystals of β-Ga2O3 and Ga-based spinels as ultra-wide bandgap transparent semiconducting oxides Z Galazka, S Ganschow, K Irmscher, D Klimm, M Albrecht, R Schewski, ...
Progress in Crystal Growth and Characterization of Materials 67 (1), 100511, 2021
71 2021 Two inch diameter, highly conducting bulk β-Ga2O3 single crystals grown by the Czochralski method Z Galazka, S Ganschow, P Seyidov, K Irmscher, M Pietsch, TS Chou, ...
Applied Physics Letters 120 (15), 2022
61 2022 Effect of metal contacts on (100) β-Ga2O3 Schottky barriers LAM Lyle, K Jiang, EV Favela, K Das, A Popp, Z Galazka, G Wagner, ...
Journal of Vacuum Science & Technology A 39 (3), 2021
55 2021 Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates KJ Liddy, AJ Green, NS Hendricks, ER Heller, NA Moser, KD Leedy, ...
Applied Physics Express 12 (12), 126501, 2019
51 2019 Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE SB Anooz, R Grüneberg, TS Chou, A Fiedler, K Irmscher, C Wouters, ...
Journal of Physics D: Applied Physics 54 (3), 034003, 2020
50 2020 Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE TS Chou, P Seyidov, S Bin Anooz, R Grüneberg, TTV Tran, K Irmscher, ...
AIP Advances 11 (11), 2021
45 2021 Challenges to overcome breakdown limitations in lateral β-Ga2O3 MOSFET devices K Tetzner, O Hilt, A Popp, SB Anooz, J Würfl
Microelectronics Reliability 114, 113951, 2020
41 2020 Exploiting the Nanostructural Anisotropy of β-Ga2 O3 to Demonstrate Giant Improvement in Titanium/Gold Ohmic Contacts MH Lee, TS Chou, S Bin Anooz, Z Galazka, A Popp, RL Peterson
ACS nano 16 (8), 11988-11997, 2022
33 2022 Self-Heating Characterization of 2 O3 Thin-Channel MOSFETs by Pulsed NA Blumenschein, NA Moser, ER Heller, NC Miller, AJ Green, A Popp, ...
IEEE Transactions on Electron Devices 67 (1), 204-211, 2019
33 2019 SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes K Tetzner, K Egbo, M Klupsch, RS Unger, A Popp, TS Chou, SB Anooz, ...
Applied Physics Letters 120 (11), 2022
29 2022 Electrical properties of (100) β-Ga2O3 Schottky diodes with four different metals K Jiang, LAM Lyle, E Favela, D Moody, T Lin, KK Das, A Popp, Z Galazka, ...
ECS Transactions 92 (7), 71, 2019
26 2019 Bulk single crystals and physical properties of β-(AlxGa1− x) 2O3 (x= 0–0.35) grown by the Czochralski method Z Galazka, A Fiedler, A Popp, S Ganschow, A Kwasniewski, P Seyidov, ...
Journal of Applied Physics 133 (3), 2023
24 2023 500° C operation of β-Ga2O3 field-effect transistors AE Islam, NP Sepelak, KJ Liddy, R Kahler, DM Dryden, J Williams, H Lee, ...
Applied Physics Letters 121 (24), 2022
20 2022 Si doping mechanism in MOVPE-grown (100) β-Ga2O3 films TS Chou, S Bin Anooz, R Grüneberg, N Dropka, J Rehm, TTV Tran, ...
Applied Physics Letters 121 (3), 2022
20 2022 Indium incorporation in homoepitaxial β-Ga2O3 thin films grown by metal organic vapor phase epitaxy S Bin Anooz, A Popp, R Grüneberg, C Wouters, R Schewski, ...
Journal of Applied Physics 125 (19), 2019
20 2019 Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β-Ga2O3 films for vertical device application TS Chou, P Seyidov, S Bin Anooz, R Grüneberg, M Pietsch, J Rehm, ...
Applied Physics Letters 122 (5), 2023
19 2023 High-mobility 4 μm MOVPE-grown (100) β-Ga2O3 film by parasitic particles suppression TS Chou, P Seyidov, SB Anooz, R Grüneberg, J Rehm, TTV Tran, ...
Japanese Journal of Applied Physics 62 (SF), SF1004, 2023
17 2023 
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