| Unveiling the origin of robust ferroelectricity in sub-2 nm hafnium zirconium oxide films H Lee, DH Choe, S Jo, JH Kim, HH Lee, HJ Shin, Y Park, S Kang, Y Cho, ... ACS Applied Materials & Interfaces 13 (30), 36499-36506, 2021 | 35 | 2021 |
| Traps at the hBN/WSe2 interface and their impact on polarity transition in WSe2 F Ali, F Ahmed, M Taqi, SB Mitta, TD Ngo, DJ Eom, K Watanabe, ... 2D Materials 8 (3), 035027, 2021 | 25 | 2021 |
| Impact of Chamber/Annealing Temperature on the Endurance Characteristic of Zr:HfO2 Ferroelectric Capacitor Y Choi, C Han, J Shin, S Moon, J Min, H Park, D Eom, J Lee, C Shin Sensors 22 (11), 4087, 2022 | 21 | 2022 |
| Sublayer thickness dependence of nanolaminated HfO2–Al2O3 films for ferroelectric phase stabilization J Lee, D Eom, C Lee, W Lee, J Oh, C Park, J Kim, H Lee, S Lee, E Lee, ... Applied Physics Letters 120 (22), 2022 | 8 | 2022 |
| Abruptly-switching MoS₂-channel atomic-threshold-switching field-effect transistor with AgTi/HfO₂-based threshold switching device S Jeong, S Han, HJ Lee, D Eom, G Youm, Y Choi, S Moon, K Ahn, J Oh, ... IEEE Access 9, 116953-116961, 2021 | 8 | 2021 |
| Combined effects of the deposition temperature and metal electrodes on ferroelectric properties of atomic-layer-deposited Hf0. 5Zr0. 5O2 films D Eom, J Lee, W Lee, J Oh, C Park, J Kim, H Lee, E Lee, H Kim Journal of Physics D: Applied Physics 56 (6), 065301, 2023 | 4 | 2023 |
| Thermal stability of MgO film on Si grown by atomic layer deposition using Mg (EtCp) 2 and H2O C Park, C Lee, W Lee, J Lee, J Kim, D Eom, J Oh, SH Lee, H Kim Ceramics International 47 (22), 31583-31589, 2021 | 4 | 2021 |
| Effect of H 2 S pre-annealing treatment on interfacial and electrical properties of HfO 2/Si 1− x Ge x (x= 0–0.3) W Lee, C Lee, J Kim, J Lee, D Eom, JC Park, TJ Park, H Kim Journal of Materials Chemistry C 9 (5), 1829-1835, 2021 | 4 | 2021 |
| Ultrathin Al2O3 interfacial layer for Hf0. 5Zr0. 5O2-based ferroelectric field-effect transistors J Lee, D Eom, H Lee, W Lee, J Oh, C Park, H Kim Journal of Physics D: Applied Physics 57 (12), 125103, 2023 | 1 | 2023 |
| Direct growth and interface reactions of ferroelectric Hf0. 5Zr0. 5O2 films on MoS2 M Leem, D Eom, H Lee, K Park, K Jeong, H Kim Applied Surface Science 629, 157426, 2023 | 1 | 2023 |
| Electrical properties of the HfO2/Al2O3 dielectrics stacked using single-and dual-temperature atomic-layer deposition processes on In0. 53Ga0. 47As C Lee, S Choi, Y An, BS An, W Lee, W Oh, D Eom, J Lee, CW Yang, ... Semiconductor Science and Technology 34 (10), 105018, 2019 | 1 | 2019 |
| Comparative analysis of Y2O3 and Al2O3 interfacial layers in modulating the electrical properties of ZrO2 and HfO2 on Ge W Lee, H Shin, J Chae, J Lee, D Eom, JH Oh, H Kim Semiconductor Science and Technology, 2025 | | 2025 |
| Capacitance Boosting of Antiferroelectric‐Hf0.2Zr0.8O2/Al2O3 Blocking Layer Using Y2O3 Interfacial Layer for Charge Trap Flash Memory J Lee, D Eom, H Lee, W Lee, J Oh, C Park, H Kim physica status solidi (RRL)–Rapid Research Letters, 2400332, 2025 | | 2025 |
| Correlation between Crystalline Defects and Electrical Characteristics of In Situ Boron‐Doped Epitaxial Si0.8Ge0.2 Films H Shin, D Eom, D Yoon, K Kim, HK Yoo, DH Ko, H Kim physica status solidi (RRL)–Rapid Research Letters, 2400335, 2025 | | 2025 |
| Steep‐Slope IGZO Transistor Monolithically Integrated with Initialization‐Free Ag/Ti/Hf0.8Zr0.2O2 Atomic Threshold Switch J Park, H Jung, D Eom, H Lee, H Kim, Y Kim, J Jeon, H Kim Advanced Electronic Materials, 2400780, 2024 | | 2024 |
| Electrical Properties of HfO2 on Si1–xGex Substrates Pretreated Using a Y Precursor with and without Subsequent Oxidant Pulsing W Lee, J Lee, D Eom, J Oh, C Park, J Kim, H Shin, H Kim ACS Applied Electronic Materials 5 (2), 1189-1195, 2023 | | 2023 |
| Impact of Various Pulse-Bases on Charge Boost in Ferroelectric Capacitors G Kim, J Lim, D Eom, Y Choi, H Kim, C Shin IEEE Electron Device Letters 43 (11), 1953-1956, 2022 | | 2022 |
