Artikelen met mandaten voor openbare toegang - Robert SchewskiMeer informatie
Nergens beschikbaar: 8
Epitaxial stabilization of pseudomorphic α-Ga2O3 on sapphire (0001)
R Schewski, G Wagner, M Baldini, D Gogova, Z Galazka, T Schulz, ...
Applied physics express 8 (1), 011101, 2014
Mandaten: Leibniz Association
Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy
A Fiedler, R Schewski, M Baldini, Z Galazka, G Wagner, M Albrecht, ...
Journal of Applied Physics 122 (16), 2017
Mandaten: Leibniz Association
Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al
Z Galazka, S Ganschow, A Fiedler, R Bertram, D Klimm, K Irmscher, ...
Journal of Crystal Growth 486, 82-90, 2018
Mandaten: German Research Foundation, Leibniz Association
Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE
S Bin Anooz, R Grüneberg, C Wouters, R Schewski, M Albrecht, A Fiedler, ...
Applied Physics Letters 116 (18), 2020
Mandaten: German Research Foundation, Federal Ministry of Education and Research, Germany
Bulk single crystals of β-Ga2O3 and Ga-based spinels as ultra-wide bandgap transparent semiconducting oxides
Z Galazka, S Ganschow, K Irmscher, D Klimm, M Albrecht, R Schewski, ...
Progress in Crystal Growth and Characterization of Materials 67 (1), 100511, 2021
Mandaten: German Research Foundation, Leibniz Association, Federal Ministry of …
Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE
SB Anooz, R Grüneberg, TS Chou, A Fiedler, K Irmscher, C Wouters, ...
Journal of Physics D: Applied Physics 54 (3), 034003, 2020
Mandaten: German Research Foundation, Federal Ministry of Education and Research, Germany
Bulk β-Ga2O3 single crystals doped with Ce, Ce+ Si, Ce+ Al, and Ce+ Al+ Si for detection of nuclear radiation
Z Galazka, R Schewski, K Irmscher, W Drozdowski, ME Witkowski, ...
Journal of Alloys and Compounds 818, 152842, 2020
Mandaten: German Research Foundation
Semiconductor scintillator development: pure and doped β-Ga2O3
W Drozdowski, M Makowski, ME Witkowski, AJ Wojtowicz, R Schewski, ...
Optical Materials 105, 109856, 2020
Mandaten: German Research Foundation
Ergens beschikbaar: 27
Homoepitaxial growth of β‐Ga2O3 layers by metal‐organic vapor phase epitaxy
G Wagner, M Baldini, D Gogova, M Schmidbauer, R Schewski, M Albrecht, ...
physica status solidi (a) 211 (1), 27-33, 2014
Mandaten: Leibniz Association
Electrical compensation by Ga vacancies in Ga2O3 thin films
E Korhonen, F Tuomisto, D Gogova, G Wagner, M Baldini, Z Galazka, ...
Applied Physics Letters 106 (24), 2015
Mandaten: Academy of Finland
Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE
D Gogova, G Wagner, M Baldini, M Schmidbauer, K Irmscher, R Schewski, ...
Journal of Crystal Growth 401, 665-669, 2014
Mandaten: Leibniz Association
Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy
M Baldini, M Albrecht, A Fiedler, K Irmscher, D Klimm, R Schewski, ...
Journal of Materials Science 51, 3650-3656, 2016
Mandaten: Leibniz Association
Substrate-orientation dependence of β-Ga2O3 (100),(010),(001), and (2¯ 01) homoepitaxy by indium-mediated metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)
P Mazzolini, A Falkenstein, C Wouters, R Schewski, T Markurt, Z Galazka, ...
Apl Materials 8 (1), 2020
Mandaten: Leibniz Association
Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting
R Schewski, K Lion, A Fiedler, C Wouters, A Popp, SV Levchenko, ...
Apl Materials 7 (2), 2019
Mandaten: Leibniz Association
Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model
R Schewski, M Baldini, K Irmscher, A Fiedler, T Markurt, B Neuschulz, ...
Journal of Applied Physics 120 (22), 2016
Mandaten: Leibniz Association
Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals
Z Galazka, S Ganschow, R Schewski, K Irmscher, D Klimm, ...
APL Materials 7 (2), 2019
Mandaten: Leibniz Association
Static dielectric constant of β-Ga2O3 perpendicular to the principal planes (100),(010), and (001)
A Fiedler, R Schewski, Z Galazka, K Irmscher
ECS Journal of Solid State Science and Technology 8 (7), Q3083, 2019
Mandaten: German Research Foundation, Leibniz Association
Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy
P Mazzolini, P Vogt, R Schewski, C Wouters, M Albrecht, O Bierwagen
APL Materials 7 (2), 2019
Mandaten: Leibniz Association
Effect of indium as a surfactant in (Ga1− xInx) 2O3 epitaxial growth on β-Ga2O3 by metal organic vapour phase epitaxy
M Baldini, M Albrecht, D Gogova, R Schewski, G Wagner
Semiconductor Science and Technology 30 (2), 024013, 2015
Mandaten: Leibniz Association
Growth, characterization, and properties of bulk SnO2 single crystals
Z Galazka, R Uecker, D Klimm, K Irmscher, M Pietsch, R Schewski, ...
physica status solidi (a) 211 (1), 66-73, 2014
Mandaten: German Research Foundation
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