| Physics of semiconductor devices M Shur, J Singh Physics Today 43 (10), 98-99, 1990 | 1348 | 1990 |
| A micro-convection model for thermal conductivity of nanofluids HE Patel, T Sundararajan, T Pradeep, A Dasgupta, N Dasgupta, SK Das PRAMANA-JOURNAL OF PHYSICS, 2005 | 557 | 2005 |
| Gate leakage mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: comparison and modeling S Turuvekere, N Karumuri, AA Rahman, A Bhattacharya, A DasGupta, ... IEEE Transactions on electron devices 60 (10), 3157-3165, 2013 | 280 | 2013 |
| Subthreshold current model of FinFETs based on analytical solution of 3-D Poisson's equation DS Havaldar, G Katti, N DasGupta, A DasGupta IEEE transactions on electron devices 53 (4), 737-742, 2006 | 161 | 2006 |
| Analytical model of subthreshold current and slope for asymmetric 4-T and 3-T double-gate MOSFETs A Dey, A Chakravorty, N DasGupta, A DasGupta IEEE Transactions on Electron Devices 55 (12), 3442-3449, 2008 | 102 | 2008 |
| An analytical expression for sheet carrier concentration vs gate voltage for HEMT modelling N DasGupta, A DasGupta Solid-state electronics 36 (2), 201-203, 1993 | 92 | 1993 |
| Pulsed laser deposition of TiO2 for MOS gate dielectric R Paily, A DasGupta, N DasGupta, P Bhattacharya, P Misra, T Ganguli, ... Applied Surface Science 187 (3-4), 297-304, 2002 | 91 | 2002 |
| Threshold voltage model for mesa-isolated small geometry fully depleted SOI MOSFETs based on analytical solution of 3-D Poisson's equation G Katti, N DasGupta, A DasGupta IEEE Transactions on Electron Devices 51 (7), 1169-1177, 2004 | 86 | 2004 |
| Semiconductor devices: modelling and technology N DasGupta, A Dasgupta PHI Learning Pvt. Ltd., 2004 | 67 | 2004 |
| Positive Shift in Threshold Voltage for Reactive-Ion- Sputtered Al2O3/AlInN/GaN MIS-HEMT G Dutta, S Turuvekere, N Karumuri, N DasGupta, A DasGupta IEEE Electron Device Letters 35 (11), 1085-1087, 2014 | 65 | 2014 |
| Deep-level traps in AlGaN/GaN-and AlInN/GaN-based HEMTs with different buffer doping technologies PV Raja, M Bouslama, S Sarkar, KR Pandurang, JC Nallatamby, ... IEEE Transactions on Electron Devices 67 (6), 2304-2310, 2020 | 64 | 2020 |
| Evidence of Fowler–Nordheim tunneling in gate leakage current of AlGaN/GaN HEMTs at room temperature S Turuvekere, DS Rawal, A DasGupta, N DasGupta IEEE Transactions on Electron Devices 61 (12), 4291-4294, 2014 | 58 | 2014 |
| A continuous analytical model for 2-DEG charge density in AlGaN/GaN HEMTs valid for all bias voltages N Karumuri, S Turuvekere, N DasGupta, A DasGupta IEEE Transactions on Electron Devices 61 (7), 2343-2349, 2014 | 58 | 2014 |
| Gate leakage mechanisms in AlInN/GaN and AlGaN/GaN MIS-HEMTs and its modeling G Dutta, N DasGupta, A DasGupta IEEE Transactions on Electron Devices 64 (9), 3609-3615, 2017 | 57 | 2017 |
| Study of random dopant fluctuation effects in FD-SOI MOSFET using analytical threshold voltage model R Rao, N DasGupta, A DasGupta IEEE Transactions on Device and Materials Reliability 10 (2), 247-253, 2010 | 48 | 2010 |
| Trapping effects on AlGaN/GaN HEMT characteristics PV Raja, JC Nallatamby, N DasGupta, A DasGupta Solid-State Electronics 176, 107929, 2021 | 46 | 2021 |
| Effect of Sputtered-Al2O3Layer Thickness on the Threshold Voltage of III-Nitride MIS-HEMTs G Dutta, N DasGupta, A DasGupta IEEE Transactions on Electron Devices 63 (4), 1450-1458, 2016 | 43 | 2016 |
| Low-Temperature ICP-CVD SiNxas Gate Dielectric for GaN-Based MIS-HEMTs G Dutta, N DasGupta, A DasGupta IEEE Transactions on Electron Devices 63 (12), 4693-4701, 2016 | 39 | 2016 |
| Effect of BCl3 concentration and process pressure on the GaN mesa sidewalls in BCl3/Cl2 based inductively coupled plasma etching DS Rawal, BK Sehgal, R Muralidharan, HK Malik, A Dasgupta Vacuum 86 (12), 1844-1849, 2012 | 39 | 2012 |
| Effect of sulfur passivation and polyimide capping on InGaAs-InP PIN photodetectors MR Ravi, A DasGupta, N DasGupta IEEE Transactions on Electron Devices 50 (2), 532-534, 2003 | 38 | 2003 |
