| Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition S Rafique, L Han, MJ Tadjer, JA Freitas, NA Mahadik, H Zhao Applied Physics Letters 108 (18), 2016 | 249 | 2016 |
| A (001) β-Ga2O3 MOSFET with+ 2.9 V threshold voltage and HfO2 gate dielectric MJ Tadjer, NA Mahadik, VD Wheeler, ER Glaser, L Ruppalt, AD Koehler, ... ECS Journal of Solid State Science and Technology 5 (9), P468, 2016 | 163 | 2016 |
| Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates MJ Tadjer, MA Mastro, NA Mahadik, M Currie, VD Wheeler, JA Freitas, ... Journal of Electronic Materials 45, 2031-2037, 2016 | 155 | 2016 |
| Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers NA Mahadik, RE Stahlbush, MG Ancona, EA Imhoff, KD Hobart, ... Applied Physics Letters 100 (4), 2012 | 75 | 2012 |
| Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy N Nepal, SB Qadri, JK Hite, NA Mahadik, MA Mastro, CR Eddy Applied Physics Letters 103 (8), 2013 | 74 | 2013 |
| Epitaxial growth of cubic and hexagonal InN thin films via plasma-assisted atomic layer epitaxy N Nepal, NA Mahadik, LO Nyakiti, SB Qadri, MJ Mehl, JK Hite, CR Eddy Jr Crystal growth & design 13 (4), 1485-1490, 2013 | 61 | 2013 |
| Ultra-low resistivity Al+ implanted 4H–SiC obtained by microwave annealing and a protective graphite cap SG Sundaresan, NA Mahadik, SB Qadri, JA Schreifels, YL Tian, Q Zhang, ... Solid-State Electronics 52 (1), 140-145, 2008 | 51 | 2008 |
| Microwave annealing of Mg-implanted and in situ Be-doped GaN GS Aluri, M Gowda, NA Mahadik, SG Sundaresan, MV Rao, JA Schreifels, ... Journal of Applied Physics 108 (8), 2010 | 50 | 2010 |
| Role of thermal expansion matching in CdTe heteroepitaxy on highly lattice-mismatched substrates RN Jacobs, J Markunas, J Pellegrino, LA Almeida, M Groenert, ... Journal of crystal growth 310 (12), 2960-2965, 2008 | 47 | 2008 |
| Damage recovery and dopant diffusion in Si and Sn ion implanted β-Ga2O3 MJ Tadjer, C Fares, NA Mahadik, JA Freitas, D Smith, R Sharma, ME Law, ... ECS Journal of Solid State Science and Technology 8 (7), Q3133, 2019 | 42 | 2019 |
| Ga2O3 Schottky barrier and heterojunction diodes for power electronics applications MJ Tadjer, NA Mahadik, JA Freitas Jr, ER Glaser, AD Koehler, LE Luna, ... Gallium Nitride Materials and Devices XIII 10532, 56-61, 2018 | 42 | 2018 |
| Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates TJ Anderson, AD Koehler, MJ Tadjer, JK Hite, A Nath, NA Mahadik, ... Applied Physics Express 10 (12), 126501, 2017 | 34 | 2017 |
| Structural and electronic properties of Si-and Sn-doped (− 201) β-Ga2O3 annealed in nitrogen and oxygen atmospheres MJ Tadjer, JA Freitas, JC Culbertson, MH Weber, ER Glaser, AL Mock, ... Journal of Physics D: Applied Physics 53 (50), 504002, 2020 | 33 | 2020 |
| Structure and morphology of inclusions in 4 offcut 4H-SiC epitaxial layers NA Mahadik, RE Stahlbush, SB Qadri, OJ Glembocki, DA Alexson, ... Journal of electronic materials 40, 413-418, 2011 | 33 | 2011 |
| Long range, non-destructive characterization of GaN substrates for power devices JC Gallagher, TJ Anderson, LE Luna, AD Koehler, JK Hite, NA Mahadik, ... Journal of Crystal Growth 506, 178-184, 2019 | 32 | 2019 |
| Growth of high crystalline quality HVPE-GaN crystals with controlled electrical properties JA Freitas Jr, JC Culbertson, NA Mahadik, T Sochacki, M Bockowski, ... Crystal Growth & Design 15 (10), 4837-4842, 2015 | 32 | 2015 |
| Relevance of thermal mismatch in large-area composite substrates for HgCdTe heteroepitaxy RN Jacobs, LA Almeida, J Markunas, J Pellegrino, M Groenert, ... Journal of electronic materials 37, 1480-1487, 2008 | 29 | 2008 |
| Nanoscale spectroscopy of dielectric properties of mica A Fali, S Gamage, M Howard, TG Folland, NA Mahadik, T Tiwald, ... ACS photonics 8 (1), 175-181, 2020 | 27 | 2020 |
| Effects of basal plane dislocations on SiC power device reliability RE Stahlbush, NA Mahadik, AJ Lelis, R Green 2018 IEEE International Electron Devices Meeting (IEDM), 19.4. 1-19.4. 4, 2018 | 27 | 2018 |
| HVPE GaN wafers with improved crystalline and electrical properties JA Freitas Jr, JC Culbertson, NA Mahadik, T Sochacki, M Iwinska, ... Journal of Crystal Growth 456, 113-120, 2016 | 26 | 2016 |
Syed B. QadriResearch PhysicistGeverifieerd e-mailadres voor nrl.navy.mil