Dr. Md Tanvir Hasan

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Medeauteurs

Akio YamamotoUniversity of FukuiGeverifieerd e-mailadres voor u-fukui.ac.jp
Md. Rafiqul Islam (PhD) SMIEEEDepartment of Electrical and Electronic Engineering, Khulna University of Engineering &TechnologyGeverifieerd e-mailadres voor eee.kuet.ac.bd
Dr. Ibrahim Mustafa MehediIEEE Senior Member | World's Top 2% Scientist | Professor @ King AbdulAziz UniversityGeverifieerd e-mailadres voor kau.edu.sa
Ashraful Ghani BhuiyanProfessor of Electrical and Electronic Engineering, Khulna University of Engineering & TechnologyGeverifieerd e-mailadres voor eee.kuet.ac.bd
Muhammad Shaffatul IslamRochester Institute of TechnologyGeverifieerd e-mailadres voor g.rit.edu
Naoteru Shigekawaosaka meteropolitan universityGeverifieerd e-mailadres voor omu.ac.jp
Biplob HossainPhD Candidate, UOW, Australia | GMIEEE | World's Top 2% ScientistGeverifieerd e-mailadres voor just.edu.bd
Md. Sakib Hasan KhanPhD Student at The Australian National University (ANU), Assistant Professor, EEE, KUETGeverifieerd e-mailadres voor eee.kuet.ac.bd
Safayet AhmedPostdoctoral Scholar, Physics Dept. Oregon State UniversityGeverifieerd e-mailadres voor connect.polyu.hk
Md Mottaleb Hossain, PhDTechnology Development Engineer at Intel Corporation, NM, USAGeverifieerd e-mailadres voor unm.edu
Md Jahirul IslamProfessor, Khulna University of Engineering & Technology, BangladeshGeverifieerd e-mailadres voor eee.kuet.ac.bd
Adnan RiazInstitute of Nanotechnology,Karlsruhe institute of technology.Geverifieerd e-mailadres voor partner.kit.edu
Dr Md Azim UllahAcademic Staff (Teaching and Research), Swinburne University of TechnologyGeverifieerd e-mailadres voor swin.edu.au
Takashi AsanoKyoto UniversityGeverifieerd e-mailadres voor kuee.kyoto-u.ac.jp
Shahidul M. IslamAssociate Professor, Delaware State UniversityGeverifieerd e-mailadres voor desu.edu

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Dr. Md Tanvir Hasan

Senior Research Fellow, University of Michigan, Ann Arbor, USA

Geverifieerd e-mailadres voor umich.edu

Semiconductor Devices


Titel Sorteren op citaties Sorteren op jaar Sorteren op titel	Geciteerd door Geciteerd door	Jaar
High performance dual core D-shape PCF-SPR sensor modeling employing gold coat MN Sakib, MB Hossain, KF Al-tabatabaie, IM Mehedi, MT Hasan, ... Results in Physics 15, 102788, 2019	142	2019
Current collapse suppression by gate field-plate in AlGaN/GaN HEMTs MT Hasan, T Asano, H Tokuda, M Kuzuhara IEEE Electron Device Letters 34 (11), 1379-1381, 2013	124	2013
Detection of small variations of ECG features using Wavelet AKMF Haque, MH Ali, MA Kiber, MT Hasan ARPN Journal of Engineering and applied Sciences 4 (6), 27-30, 2009	70	2009
LED Illumination for High-Quality High-Yield Crop Growth in Protected Cropping Environments MM Rahman, DL Field, SM Ahmed, MT Hasan, MK Basher, K Alameh Plants 10 (11), 2470, 2021	40	2021
Two dimensional electron gas in InN-based heterostructures: Effects of spontaneous and piezoelectric polarization MT Hasan, AG Bhuiyan, A Yamamoto Solid-State Electronics 52 (1), 134-139, 2008	33	2008
Numerical analysis and design of photonic crystal fiber based surface plasmon resonance biosensor MB Hossain, MS Hossain, M Moznuzzaman, MA Hossain, ... Journal of Sensor Technology 9 (2), 27-34, 2019	27	2019
Tunable Photocatalytic Properties of Planar GaN/GeC Hetero-Bilayer: Production of H₂ Fuel MSH Khan, MR Islam, MS Islam, IM Mehedi, MT Hasan IEEE Access 8, 209030-209042, 2020	20	2020
Real-Time Non-Intrusive Electrical Load Classification Over IoT Using Machine Learning MT Ahammed, MM Hasan, MS Arefin, MR Islam, MA Rahman, E Hossain, ... IEEE Access 9, 115053-115067, 2021	19	2021
Impact of Channel Thickness on the Performance of GaAs and GaSb DG-JLMOSFETs: An Atomistic Tight Binding Based Evaluation MS Islam, MS Hasan, MR Islam, A Iskanderani, IM Mehedi, MT Hasan IEEE Access 9, 117649-117659, 2021	18	2021
Strain-dependent electronic and optical properties of boron-phosphide and germanium-carbide hetero-bilayer: A first-principles study MS Hasan Khan, MR Islam, MT Hasan AIP Advances 10 (8), 085128, 2020	18	2020
Phase separation of thick (∼ 1 µm) InxGa1− xN (x∼ 0.3) grown on AlN/Si (111): Simultaneous emergence of metallic In–Ga and GaN-rich InGaN A Yamamoto, MT Hasan, A Mihara, N Narita, N Shigekawa, M Kuzuhara Applied Physics Express 7 (3), 035502, 2014	18	2014
Growth temperature dependent critical thickness for phase separation in thick (~ 1μm) In x Ga 1− x N (x= 0.2–0.4) A Yamamoto, TM Hasan, K Kodama, N Shigekawa, M Kuzuhara Journal of Crystal Growth 419, 64-68, 2015	17	2015
Design and performance of inxga1-xn-based mj solar cells MR Islam, MT Hasan, AG Bhuiyan, MR Islam, A Yamamoto IETECH Journal of Electrical Analysis 2 (4), 237-243, 2008	15	2008
Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study P Murugapandiyan, D Nirmal, MT Hasan, A Varghese, J Ajayan, ... Materials Science and Engineering: B 273, 115449, 2021	14	2021
Breakdown voltage enhancement of gate field plate Al_0.295Ga_0.705N/GaN HEMTs P Murugapandiyan, MT Hasan, V Rajya Lakshmi, M Wasim, J Ajayan, ... International Journal of Electronics 108 (8), 1273-1287, 2021	14	2021
Surface barrier height lowering at above 540 K in AlInN/AlN/GaN heterostructures T Hasan, H Tokuda, M Kuzuhara Applied physics letters 99 (13), 2011	14	2011
Mechanism and Suppression of Current Collapse in AlGaN/GaN High Electron Mobility Transistors MT Hasan University of Fukui, 2013	12	2013
Proposal of High Performance 1.55 µm Quantum Dot Heterostructure Laser Using InN MM Hossain, M Abdullah-Al Humayun, MT Hasan, AG Bhuiyan, ... IEICE transactions on electronics 95 (2), 255-261, 2012	12	2012
Study of Two-Dimensional Janus WXY (X≠ Y= S, Se, and Te) Trilayer Homostructures for Photovoltaic Applications Using DFT Screening of Different Stacking Patterns K Kubra, MR Islam, MS Hasan Khan, MS Islam, MT Hasan ACS omega 7 (15), 12947-12955, 2022	10	2022
Potential Visible-Light Driven PtO₂/GaN vdW Hetero-Bilayer Photocatalysts for Water Splitting Using First-Principles MSH Khan, MS Islam, MR Islam, A Iskanderani, IM Mehedi, MT Hasan IEEE Access 9, 109510-109521, 2021	10	2021

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