A 0.8 THz PS Chakraborty, AS Cardoso, BR Wier, AP Omprakash, JD Cressler, ...
IEEE Electron Device Letters 35 (2), 151-153, 2014
92 2014 Operation of SiGe HBTs down to 70 mK H Ying, BR Wier, J Dark, NE Lourenco, L Ge, AP Omprakash, M Mourigal, ...
IEEE Electron Device Letters 38 (1), 12-15, 2016
42 2016 Large-signal reliability analysis of SiGe HBT cascode driver amplifiers MA Oakley, US Raghunathan, BR Wier, PS Chakraborty, JD Cressler
IEEE Transactions on Electron Devices 62 (5), 1383-1389, 2015
39 2015 Collector transport in SiGe HBTs operating at cryogenic temperatures H Ying, J Dark, AP Omprakash, BR Wier, L Ge, U Raghunathan, ...
IEEE Transactions on Electron Devices 65 (9), 3697-3703, 2018
32 2018 A comparison of field and current-driven hot-carrier reliability in NPN SiGe HBTs BR Wier, US Raghunathan, PS Chakraborty, H Yasuda, P Menz, ...
IEEE Transactions on Electron Devices 62 (7), 2244-2250, 2015
27 2015 Tunneling, current gain, and transconductance in silicon-germanium heterojunction bipolar transistors operating at millikelvin temperatures D Davidović, H Ying, J Dark, BR Wier, L Ge, NE Lourenco, AP Omprakash, ...
Physical Review Applied 8 (2), 024015, 2017
26 2017 A physics-based circuit aging model for mixed-mode degradation in SiGe HBTs BR Wier, K Green, J Kim, DT Zweidinger, JD Cressler
IEEE Transactions on Electron Devices 63 (8), 2987-2993, 2016
24 2016 Bias-and temperature-dependent accumulated stress modeling of mixed-mode damage in SiGe HBTs US Raghunathan, PS Chakraborty, TG Bantu, BR Wier, H Yasuda, ...
IEEE Transactions on electron Devices 62 (7), 2084-2091, 2015
23 2015 Hot-carrier-damage-induced current gain enhancement (CGE) effects in SiGe HBTs US Raghunathan, RP Martinez, BR Wier, AP Omprakash, H Ying, ...
IEEE Transactions on Electron Devices 65 (6), 2430-2438, 2018
13 2018 SiGe HBT profiles with enhanced inverse-mode operation and their impact on single-event transients ZE Fleetwood, A Ildefonso, GN Tzintzarov, B Wier, U Raghunathan, ...
IEEE transactions on Nuclear Science 65 (1), 399-406, 2017
13 2017 Physical differences in hot carrier degradation of oxide interfaces in complementary (np-n+ pnp) SiGe HBTs US Raghunathan, H Ying, BR Wier, AP Omprakash, PS Chakraborty, ...
IEEE Transactions on Electron Devices 64 (1), 37-44, 2016
12 2016 The role of negative feedback effects on single-event transients in SiGe HBT analog circuits J Seungwoo, I Song, ZE Fleetwood, U Raghunathan, NE Lourenco, ...
IEEE Transactions on Nuclear Science 62 (6), 2599-2605, 2015
9 2015 TCAD modeling of accumulated damage during time-dependent mixed-mode stress US Raghunathan, PS Chakraborty, B Wier, JD Cressler, H Yasuda, ...
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 179-182, 2013
8 2013 Revisiting safe operating area: SiGe HBT aging models for reliability-aware circuit design BR Wier, RP Martinez, US Raghunathan, H Ying, S Zeinolabedinzadeh, ...
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2018
7 2018 IEEE Trans. Electron Devices BR Wier
IEEE Trans. Electron Devices 62 (7), 2244, 2015
6 2015 Influence of ethical position and information asymmetry on transfer price negotiations K Green, B Wier
Accounting and Finance Research 4 (1), 1-30, 2015
5 2015 On the reliability of SiGe HBT cascode driver amplifiers MA Oakley, B Wier, US Raghunathan, PS Chakraborty, JD Cressler
2014 IEEE Radio Frequency Integrated Circuits Symposium, 445-448, 2014
5 2014 Base current degradation mechanisms in NPN SiGe HBTs subjected to high current stress BR Wier, US Raghunathan, PS Chakraborty, JD Cressler, H Yasuda, ...
Proc. 2013 IEEE International Solid-State Device Research Symposium, 1-2, 2013
5 2013 On the use of vertical superjunction collectors for enhanced breakdown performance in SiGe HBTs BR Wier, US Raghunathan, ZE Fleetwood, MA Oakley, AJ Joseph, V Jain, ...
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 21-24, 2016
4 2016 Modeling of high-current damage in SiGe HBTs under pulsed stress US Raghunathan, B Wier, RP Martinez, ZE Fleetwood, A Omprakash, ...
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 17-20, 2016
4 2016 