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Felix Julian Schupp
Felix Julian Schupp
IBM Research
Geverifieerd e-mailadres voor zurich.ibm.com
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Shuttling a single charge across a one-dimensional array of silicon quantum dots
AR Mills, DM Zajac, MJ Gullans, FJ Schupp, TM Hazard, JR Petta
Nature communications 10 (1), 1063, 2019
2932019
A coherent nanomechanical oscillator driven by single-electron tunnelling
Y Wen, N Ares, FJ Schupp, T Pei, GAD Briggs, EA Laird
Nature physics 16 (1), 75-82, 2020
832020
Sensitive radio-frequency measurements of a quantum dot by tuning to perfect impedance matching
N Ares, FJ Schupp, A Mavalankar, G Rogers, J Griffiths, GAC Jones, ...
Physical Review Applied 5 (3), 034011, 2016
742016
One dimensional transport in silicon nanowire junction-less field effect transistors
MM Mirza, FJ Schupp, JA Mol, DA MacLaren, GAD Briggs, DJ Paul
Scientific reports 7 (1), 3004, 2017
462017
Sweet-spot operation of a germanium hole spin qubit with highly anisotropic noise sensitivity
NW Hendrickx, L Massai, M Mergenthaler, FJ Schupp, S Paredes, ...
Nature Materials 23 (7), 920-927, 2024
432024
Secondary electron interference from trigonal warping in clean carbon nanotubes
A Dirnaichner, M Del Valle, KJG Götz, FJ Schupp, N Paradiso, M Grifoni, ...
Physical review letters 117 (16), 166804, 2016
282016
Nanomechanical characterization of the Kondo charge dynamics in a carbon nanotube
KJG Götz, DR Schmid, FJ Schupp, PL Stiller, C Strunk, AK Hüttel
Physical review letters 120 (24), 246802, 2018
242018
Sensitive radiofrequency readout of quantum dots using an ultra-low-noise SQUID amplifier
FJ Schupp, F Vigneau, Y Wen, A Mavalankar, J Griffiths, GAC Jones, ...
Journal of Applied Physics 127 (24), 2020
232020
Single-electron devices in silicon
FJ Schupp
Materials Science and Technology 33 (8), 944-962, 2017
172017
Anisotropic etching of graphene in inert and oxygen atmospheres
F Oberhuber, S Blien, F Schupp, D Weiss, J Eroms
physica status solidi (a) 214 (2), 1600459, 2017
142017
Impact of interface traps on charge noise, mobility and percolation density in Ge/SiGe heterostructures
L Massai, B Hetényi, M Mergenthaler, FJ Schupp, L Sommer, S Paredes, ...
arXiv preprint arXiv:2310.05902, 2023
132023
Radio-frequency reflectometry of a quantum dot using an ultra-low-noise SQUID amplifier
FJ Schupp, F Vigneau, Y Wen, A Mavalankar, J Griffiths, GAC Jones, ...
arXiv preprint arXiv:1810.05767, 2018
62018
Impact of interface traps on charge noise and low-density transport properties in Ge/SiGe heterostructures
L Massai, B Hetényi, M Mergenthaler, FJ Schupp, L Sommer, S Paredes, ...
Communications Materials 5 (1), 151, 2024
52024
Quantum interference in silicon one-dimensional junctionless nanowire field-effect transistors
FJ Schupp, MM Mirza, DA MacLaren, GAD Briggs, DJ Paul, JA Mol
Physical Review B 98 (23), 235428, 2018
52018
Carbon nanotube millikelvin transport and nanomechanics
KJG Götz, FJ Schupp, AK Hüttel
physica status solidi (b) 256 (6), 1800517, 2019
42019
Prospects of silicide contacts for silicon quantum electronic devices
K Tsoukalas, F Schupp, L Sommer, I Bouquet, M Mergenthaler, S Paredes, ...
Applied Physics Letters 125 (1), 2024
32024
Spin qubits in silicon FinFET devices
A Fuhrer, M Aldeghi, T Berger, LC Camenzind, RS Eggli, S Geyer, ...
2022 International Electron Devices Meeting (IEDM), 14.1. 1-14.1. 4, 2022
32022
Capacitive crosstalk in gate-based dispersive sensing of spin qubits
EG Kelly, A Orekhov, NW Hendrickx, M Mergenthaler, FJ Schupp, ...
Applied Physics Letters 123 (26), 2023
22023
Nanomanipulation an Graphen
F Schupp
22011
Radio-frequency characterization of a supercurrent transistor made of a carbon nanotube
M Mergenthaler, FJ Schupp, A Nersisyan, N Ares, A Baumgartner, ...
Materials for Quantum Technology 1 (3), 035003, 2021
12021
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Artikelen 1–20