A 0.8 THz PS Chakraborty, AS Cardoso, BR Wier, AP Omprakash, JD Cressler, ...
IEEE Electron Device Letters 35 (2), 151-153, 2014
92 2014 A new wideband, low insertion loss, high linearity SiGe RF switch CD Cheon, MK Cho, SG Rao, AS Cardoso, JD Connor, JD Cressler
IEEE Microwave and Wireless Components Letters 30 (10), 985-988, 2020
38 2020 Low-loss, wideband SPDT switches and switched-line phase shifter in 180-nm RF CMOS on SOI technology AS Cardoso, P Saha, PS Chakraborty, DM Fleischhauer, JD Cressler
2014 IEEE Radio and Wireless Symposium (RWS), 199-201, 2014
37 2014 Evaluation of enhanced low dose rate sensitivity in fourth-generation SiGe HBTs ZE Fleetwood, AS Cardoso, I Song, E Wilcox, NE Lourenco, SD Phillips, ...
IEEE transactions on Nuclear Science 61 (6), 2915-2922, 2014
28 2014 Single-event transient and total dose response of precision voltage reference circuits designed in a 90-nm SiGe BiCMOS technology AS Cardoso, PS Chakraborty, N Karaulac, DM Fleischhauer, ...
IEEE transactions on Nuclear Science 61 (6), 3210-3217, 2014
26 2014 An investigation of single-event effects and potential SEU mitigation strategies in fourth-generation, 90 nm SiGe BiCMOS NE Lourenco, SD Phillips, TD England, AS Cardoso, ZE Fleetwood, ...
IEEE transactions on Nuclear Science 60 (6), 4175-4183, 2013
26 2013 An investigation of single-event transients in C-SiGe HBT on SOI current mirror circuits S Jung, NE Lourenco, I Song, MA Oakley, TD England, R Arora, ...
IEEE transactions on Nuclear Science 61 (6), 3193-3200, 2014
22 2014 An investigation of single event transient response in 45-nm and 32-nm SOI RF-CMOS devices and circuits TD England, R Arora, ZE Fleetwood, NE Lourenco, KA Moen, AS Cardoso, ...
IEEE Transactions on Nuclear Science 60 (6), 4405-4411, 2013
21 2013 On the Transient Response of a Complementary (npn NE Lourenco, ZE Fleetwood, S Jung, AS Cardoso, PS Chakraborty, ...
IEEE Transactions on Nuclear Science 61 (6), 3146-3153, 2014
20 2014 A SiGe 8–18-GHz receiver with built-in-testing capability for self-healing applications DC Howard, PK Saha, S Shankar, TD England, AS Cardoso, ...
IEEE Transactions on Microwave Theory and Techniques 62 (10), 2370-2380, 2014
18 2014 Evaluating the effects of single event transients in FET-based single-pole double-throw RF switches AS Cardoso, PS Chakraborty, NE Lourenco, TD England, P Saha, ...
IEEE Transactions on Nuclear Science 61 (2), 756-765, 2014
18 2014 Single-event effects in a W-band (75-110 GHz) radar down-conversion mixer implemented in 90 nm, 300 GHz SiGe HBT technology S Zeinolabedinzadeh, I Song, US Raghunathan, NE Lourenco, ...
IEEE Transactions on Nuclear Science 62 (6), 2657-2665, 2015
17 2015 Design methodology for a wideband, low insertion loss, digital step attenuator in SiGe BiCMOS technology CD Cheon, SG Rao, W Lim, AS Cardoso, MK Cho, JD Cressler
IEEE Transactions on Circuits and Systems II: Express Briefs 69 (3), 744-748, 2021
16 2021 Single-event transient response of comparator pre-amplifiers in a complementary SiGe technology A Ildefonso, NE Lourenco, ZE Fleetwood, MT Wachter, GN Tzintzarov, ...
IEEE transactions on Nuclear Science 64 (1), 89-96, 2016
14 2016 Impact of total ionizing dose on a 4th generation, 90 nm SiGe HBT Gaussian pulse generator F Inanlou, NE Lourenco, ZE Fleetwood, I Song, DC Howard, A Cardoso, ...
IEEE transactions on Nuclear Science 61 (6), 3050-3054, 2014
12 2014 Total ionizing dose response of triple-well FET-based wideband, high-isolation RF switches in a 130 nm SiGe BiCMOS technology AS Cardoso, PS Chakraborty, NE Lourenco, P Song, TD England, ...
IEEE Transactions on Nuclear Science 60 (4), 2567-2573, 2013
11 2013 On the cryogenic RF linearity of SiGe HBTs in a fourth-generation 90-nm SiGe BiCMOS technology AS Cardoso, AP Omprakash, PS Chakraborty, N Karaulac, ...
IEEE Transactions on Electron Devices 62 (4), 1127-1135, 2015
9 2015 A 42.5–51.0 GHz SiGe BiCMOS integrated tunable bandpass filter and attenuator A Moradinia, CD Cheon, CT Coen, NE Lourenco, AS Cardoso, ...
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2022
8 2022 The effects of temperature on the single-event transient response of a high-voltage (> 30 V) complementary SiGe-on-SOI technology AP Omprakash, A Ildefonso, ZE Fleetwood, GN Tzintzarov, AS Cardoso, ...
IEEE Transactions on Nuclear Science 66 (1), 389-396, 2018
7 2018 Cryogenic characterization of RF low-noise amplifiers utilizing inverse-mode SiGe HBTs for extreme environment applications I Song, AS Cardoso, H Ying, MK Cho, JD Cressler
IEEE Transactions on Device and Materials Reliability 18 (4), 613-619, 2018
7 2018 