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Ankur Nipane
Ankur Nipane
Intel Corporation
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Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation
A Nipane, D Karmakar, N Kaushik, S Karande, S Lodha
ACS nano 10 (2), 2128-2137, 2016
4092016
Schottky barrier heights for Au and Pd contacts to MoS2
N Kaushik, A Nipane, F Basheer, S Dubey, S Grover, MM Deshmukh, ...
Applied Physics Letters 105 (11), 2014
3032014
Transferred via contacts as a platform for ideal two-dimensional transistors
Y Jung*, MS Choi*, A Nipane, A Borah, B Kim, A Zangiabadi, T Taniguchi, ...
Nature Electronics 2 (5), 187-194, 2019
2722019
Electrical characterization of 2D materials-based field-effect transistors
SB Mitta*, MS Choi*, A Nipane*, F Ali, C Kim, J Teherani, JC Hone, ...
2D Materials 8 (1), 012002, 2020
1812020
Interfacial n-Doping Using an Ultrathin TiO2 Layer for Contact Resistance Reduction in MoS2
N Kaushik, D Karmakar, A Nipane, S Karande, S Lodha
ACS applied materials & interfaces 8 (1), 256-263, 2016
1542016
High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide
MS Choi*, A Nipane*, BSY Kim*, ME Ziffer, I Datta, A Borah, Y Jung, B Kim, ...
Nature Electronics 4 (10), 731-739, 2021
702021
Absence of a Band Gap at the Interface of a Metal and Highly Doped Monolayer MoS2
A Kerelsky, A Nipane, D Edelberg, D Wang, X Zhou, A Motmaendadgar, ...
Nano letters 17 (10), 5962-5968, 2017
622017
Electrostatics of lateral pn junctions in atomically thin materials
A Nipane, S Jayanti, A Borah, JT Teherani
Journal of Applied Physics 122 (19), 2017
552017
Damage-Free Atomic Layer Etch of WSe2: A Platform for Fabricating Clean Two-Dimensional Devices
A Nipane*, MS Choi*, PJ Sebastian, K Yao, A Borah, P Deshmukh, ...
ACS Applied Materials & Interfaces, 2020
382020
Low-Resistance p-Type Ohmic Contacts to Ultrathin WSe2 by Using a Monolayer Dopant
A Borah, A Nipane, MS Choi, J Hone, JT Teherani
ACS Applied Electronic Materials 3 (7), 2941-2947, 2021
352021
Ambipolar charge-transfer graphene plasmonic cavities
BSY Kim, AJ Sternbach, MS Choi, Z Sun, FL Ruta, Y Shao, AS McLeod, ...
Nature Materials 22 (7), 838-843, 2023
202023
The 2D Debye length: An analytical study of weak charge screening in 2D semiconductors
AR Bechhofer, A Ueda, A Nipane, JT Teherani
Journal of Applied Physics 129 (2), 2021
182021
Analytical Measurements of Contact Resistivity in Two-Dimensional WSe2 Field-Effect Transistors
I Moon*, MS Choi*, S Lee, A Nipane, JC Hone, WJ Yoo
2D Materials, 2021
132021
Evaluating Au and Pd contacts in mono and multilayer MoS2 transistors
N Kaushik, A Nipane, F Basheer, S Dubey, S Grover, M Deshmukh, ...
72nd Device Research Conference, 195-196, 2014
132014
Role of out-of-plane dielectric thickness in the electrostatic simulation of atomically thin lateral junctions
A Nipane, Y Zhang, JT Teherani
Journal of Applied Physics 123 (21), 2018
92018
P-type doping of MoS2 with phosphorus using a plasma immersion ion implantation (PIII) process
A Nipane, N Kaushik, S Karande, D Karmakar, S Lodha
2015 73rd Annual Device Research Conference (DRC), 191-192, 2015
72015
Demystifying the role of channel region in two-dimensional transistors
A Nipane, JT Teherani, A Ueda
Applied Physics Express 14 (4), 044003, 2021
62021
Contact resistance reduction in MoS2 FETs using ultra-thin TiO2 interfacial layers
N Kaushik, A Nipane, S Karande, S Lodha
2015 73rd Annual Device Research Conference (DRC), 211-212, 2015
42015
An intuitive equivalent circuit model for multilayer van der Waals heterostructures
A Borah, PJ Sebastian, A Nipane, JT Teherani
IEEE Transactions on Electron Devices 65 (10), 4209-4215, 2018
32018
Atomic Layer Etching (ALE) of WSe2 Yielding High Mobility p-FETs
A Nipane, PJ Sebastian, Y Jung, MS Choi, A Borah, WJ Yoo, J Hone, ...
2019 Device Research Conference (DRC), 231-232, 2019
22019
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Artikelen 1–20