| Large-signal reliability analysis of SiGe HBT cascode driver amplifiers MA Oakley, US Raghunathan, BR Wier, PS Chakraborty, JD Cressler IEEE Transactions on Electron Devices 62 (5), 1383-1389, 2015 | 39 | 2015 |
| A class-E tuned W-band SiGe power amplifier with 40.4% power-added efficiency at 93 GHz P Song, MA Oakley, AÇ Ulusoy, M Kaynak, B Tillack, GA Sadowy, ... IEEE Microwave and Wireless Components Letters 25 (10), 663-665, 2015 | 35 | 2015 |
| Integrated power amplifiers for use in wireless communication devices MA Oakley, DH Lee, KH An, CH Lee, J Laskar US Patent 7,961,048, 2011 | 25 | 2011 |
| An investigation of single-event transients in C-SiGe HBT on SOI current mirror circuits S Jung, NE Lourenco, I Song, MA Oakley, TD England, R Arora, ... IEEE transactions on Nuclear Science 61 (6), 3193-3200, 2014 | 22 | 2014 |
| On the application of inverse-mode SiGe HBTs in RF receivers for the mitigation of single-event transients I Song, MK Cho, MA Oakley, A Ildefonso, I Ju, SP Buchner, D McMorrow, ... IEEE transactions on Nuclear Science 64 (5), 1142-1150, 2017 | 18 | 2017 |
| Single-event effects in a W-band (75-110 GHz) radar down-conversion mixer implemented in 90 nm, 300 GHz SiGe HBT technology S Zeinolabedinzadeh, I Song, US Raghunathan, NE Lourenco, ... IEEE Transactions on Nuclear Science 62 (6), 2657-2665, 2015 | 17 | 2015 |
| An investigation of the use of inverse-mode SiGe HBTs as switching pairs for SET-mitigated RF mixers I Song, US Raghunathan, NE Lourenco, ZE Fleetwood, MA Oakley, ... IEEE Transactions on Nuclear Science 63 (2), 1099-1108, 2016 | 16 | 2016 |
| A 0.3–15 GHz SiGe LNA with> 1 THz gain-bandwidth product S Zeinolabedinzadeh, AÇ Ulusoy, MA Oakley, NE Lourenco, JD Cressler IEEE Microwave and Wireless Components Letters 27 (4), 380-382, 2017 | 15 | 2017 |
| Power Amplifier Bias Control WD Anderson, DR Story, MA Oakley US Patent App. 11/613,392, 2008 | 14 | 2008 |
| SiGe technology as a millimeter-wave platform: scaling issues, reliability physics, circuit performance, and new opportunities JD Cressler, C Coen, S Zeinolabedinzadeh, P Song, R Schmid, M Oakley, ... 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-13, 2016 | 10 | 2016 |
| The role of negative feedback effects on single-event transients in SiGe HBT analog circuits J Seungwoo, I Song, ZE Fleetwood, U Raghunathan, NE Lourenco, ... IEEE Transactions on Nuclear Science 62 (6), 2599-2605, 2015 | 9 | 2015 |
| On the cryogenic RF linearity of SiGe HBTs in a fourth-generation 90-nm SiGe BiCMOS technology AS Cardoso, AP Omprakash, PS Chakraborty, N Karaulac, ... IEEE Transactions on Electron Devices 62 (4), 1127-1135, 2015 | 9 | 2015 |
| On the reliability of SiGe HBT cascode driver amplifiers MA Oakley, B Wier, US Raghunathan, PS Chakraborty, JD Cressler 2014 IEEE Radio Frequency Integrated Circuits Symposium, 445-448, 2014 | 5 | 2014 |
| On the use of vertical superjunction collectors for enhanced breakdown performance in SiGe HBTs BR Wier, US Raghunathan, ZE Fleetwood, MA Oakley, AJ Joseph, V Jain, ... 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 21-24, 2016 | 4 | 2016 |
| Optimizing the vertical profile of SiGe HBTs to mitigate radiation-induced upsets ZE Fleetwood, BR Wier, US Raghunathan, NE Lourenco, MA Oakley, ... 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting-BCTM, 72-75, 2015 | 3 | 2015 |
| Inverse class‐FX‐band S i G e HBT power amplifier with 44% PAE and 24.5 d B m peak output power I Song, AÇ Ulusoy, MA Oakley, I Ju, MK Cho, JD Cressler Microwave and Optical Technology Letters 58 (12), 2868-2871, 2016 | 2 | 2016 |
| Emitter-base profile optimization of SiGe HBTs for improved thermal stability and frequency response at low-bias currents US Raghunathan, BR Wier, ZE Fleetwood, MA Oakley, V Jain, ... 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2018 | 1 | 2018 |
| Limiting Effects on the Design of Vertical Superjunction Collectors in SiGe HBTs BR Wier, US Raghunathan, ZE Fleetwood, MA Oakley, AJ Joseph, V Jain, ... IEEE Transactions on Electron Devices 65 (2), 793-797, 2018 | 1 | 2018 |
| Predicting hard failures and maximum usable range of SiGe HBTs RP Martinez, US Raghunathan, BR Wier, AP Omprakash, MA Oakley, ... 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 122-125, 2017 | 1 | 2017 |
| LARGE-SIGNAL RELIABILITY OF SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTOR AMPLIFIERS MA Oakley Georgia Institute of Technology, 2016 | | 2016 |
