Determining the Compositional Profile of HgTe/Cdx 1 – x VA Shvets, NN Mikhailov, DG Ikusov, IN Uzhakov, SA Dvoretskii
Optics and Spectroscopy 127, 340-346, 2019
26 2019 MBE-grown MCT hetero-and nanostructures for IR and THz detectors SA Dvoretsky, NN Mikhailov, VG Remesnik, YG Sidorov, VA Shvets, ...
Opto-Electronics Review 27 (3), 282-290, 2019
24 2019 HgCdTe quantum wells grown by molecular beam epitaxy SA Dvoretsky, DG Ikusov, ZD Kvon, NN Mikhailov, VG Remesnik, ...
Semiconductor Physics Quantum Electronics & Optoelectronics, 2007
18 2007 Optical probing of extended defects in CdTe virtual substrates via isolated emitters produced by weakly perturbed fragments of partial dislocations VS Krivobok, SI Chentsov, SN Nikolaev, MA Chernopitssky, ...
Applied Physics Letters 115 (23), 2019
14 2019 The growth of CdTe layer on GaAs substrate by MBE SA Dvoretsky, NN Mikhailov, DG Ikusov, VA Kartashev, AV Kolesnikov, ...
Methods for Film Synthesis and Coating Procedures, 2019
13 2019 Microtubes and corrugations fabricated from strained ZnTe/CdHgTe/HgTe/CdHgTe heterofilms with 2D electron–hole gas in the HgTe quantum well SV Mutilin, RA Soots, AB Vorob'Ev, DG Ikusov, NN Mikhailov, VY Prinz
Journal of Physics D: Applied Physics 47 (29), 295301, 2014
12 2014 Effect of the arsenic cracking zone temperature on the efficiency of arsenic incorporation in CdHgTe films in molecular-beam epitaxy GY Sidorov, NN Mikhaĭlov, VS Varavin, DG Ikusov, YG Sidorov, ...
Semiconductors 42, 651-654, 2008
11 2008 Molecular beam epitaxy of CdxHg1− xTe YG Sidorov, AP Anciferov, VS Varavin, SA Dvoretsky, NN Mikhailov, ...
Advances in Semiconductor Nanostructures, 297-323, 2017
9 2017 Stimulated radiation of optically pumped Cd x Hg1 − x Te-Based heterostructures at room temperature AA Andronov, YN Nozdrin, AV Okomel’kov, AA Babenko, VS Varavin, ...
Semiconductors 42, 179-182, 2008
9 2008 Spontaneous and stimulated emission from Cdx Hg1−x Te semiconductor films AA Andronov, YN Nozdrin, AV Okomel’kov, VS Varavin, RN Smirnov, ...
Semiconductors 40, 1266-1274, 2006
9 2006 Dependence of the electrical parameters of MBE-grown Cd x Hg1 − x Te films on the level of doping with indium VS Varavin, SA Dvoretskiĭ, DG Ikusov, NN Mikhaĭlov, YG Sidorov, ...
Semiconductors 42, 648-650, 2008
8 2008 Possibilities of Characterizing the Crystal Parameters of Cdx 1 – x MF Stupak, NN Mikhailov, SA Dvoretskii, MV Yakushev, DG Ikusov, ...
Physics of the Solid State 62, 252-259, 2020
7 2020 Optoelectron. Instrum SA Dvoretsky, DG Ikusov, DK Kvon, NN Mikhailov, N Dai, RN Smirnov, ...
Data Process 43 (4), 375, 2007
7 2007 Interface studies in HgTe/HgCdTe quantum wells N Mikhailov, V Shvets, D Ikusov, I Uzhakov, S Dvoretsky, K Mynbaev, ...
physica status solidi (b) 257 (5), 1900598, 2020
4 2020 Polarization pyrometry of layered semiconductor structures under conditions of low-temperature technological processes IA Azarov, VA Shvets, SA Dulin, NN Mikhailov, SA Dvoretskii, DG Ikusov, ...
Optoelectronics, Instrumentation and Data Processing 53, 630-638, 2017
4 2017 HgCdTe structures for dual-band photodetectors operating in the 3–5 and 8–12 µ m spectral ranges VS Varavin, SA Dvoretskii, DG Ikusov, NN Mikhailov, VG Remesnik, ...
Optoelectronics, Instrumentation and Data Processing 49, 476-484, 2013
4 2013 1.5–1.8 μm photoluminescence of MBE-grown HgCdTe films VI Ivanov-Omskiĭ, NL Bazhenov, KD Mynbaev, VA Smirnov, VS Varavin, ...
Technical Physics Letters 33, 471-473, 2007
4 2007 Mechanisms of recombination of nonequilibrium charge carriers in epitaxial Cdx Hg1−x Te (x = 0.20–0.23) layers DG Ikusov, FF Sizov, SV Staryi, VV Teterkin
Semiconductors 41, 130-135, 2007
4 2007 Study of MIS structures based on CdHgTe and HfO2 applied by PEALD DV Gorshkov, ER Zakirov, GY Sidorov, IV Sabinina, DV Marin, DG Ikusov, ...
Applied Physics Letters 121 (8), 2022
2 2022 Determination of the composition profile of HgTe/Cd VA Shvets, NN Mikhailov, DG Ikusov, IN Uzhakov, SA Dvoretskii
Optics and Spectroscopy 127 (2), 318-324, 2019
2 2019 