Shaowen Chen

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Cory R. DeanColumbia UnviersityVerifisert e-postadresse på phys.columbia.edu
Kenji WatanabeNational Institute for Materials ScienceVerifisert e-postadresse på nims.go.jp
T.TaniguchiNational Institute for Materials ScienceVerifisert e-postadresse på nims.go.jp
Matthew YankowitzUniversity of WashingtonVerifisert e-postadresse på uw.edu
James C. HoneDepartment of Mechanical Engineering, Columbia UniversityVerifisert e-postadresse på columbia.edu
Andrea YoungProfessor, Physics Department, UCSBVerifisert e-postadresse på physics.ucsb.edu
Hryhoriy PolshynInstitute of Science and Technology AustriaVerifisert e-postadresse på ist.ac.at
Yuxuan ZhangUMDVerifisert e-postadresse på umd.edu
Dante M. KennesProfessor of Physics, RWTH Aachen University and Visiting Scientist at MPSD HamburgVerifisert e-postadresse på rwth-aachen.de
Alexander KerelskyGoogleVerifisert e-postadresse på google.com
Lede XianTheory department, Max Planck Institute for the Structure and Dynamics of MatterVerifisert e-postadresse på mpsd.mpg.de
David GrafNational High Magnetic Field Laboratory, Florida State UniversityVerifisert e-postadresse på magnet.fsu.edu
Lei WangColumbia UniversityVerifisert e-postadresse på columbia.edu
Bo WenResearch Staff Member, IBMVerifisert e-postadresse på us.ibm.com
Yuanda GaoIntel Corporation, Columbia UniversityVerifisert e-postadresse på columbia.edu
avik W ghoshProfessor, University of Virginia, Electrical EngineeringVerifisert e-postadresse på virginia.edu
K M Masum HabibIntel Corp.Verifisert e-postadresse på ee.ucr.edu
Qianqian HuangInstitute of Microelectronics, Peking UniversityVerifisert e-postadresse på pku.edu.cn
Zheng XinResearch Fellow, National University of SingaporeVerifisert e-postadresse på nus.edu.sg
Prof. Lang ZengProfessor in School of Integrated Circuits Science and Engineering, Beihang UniversityVerifisert e-postadresse på buaa.edu.cn

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Shaowen Chen

Rutgers University

Verifisert e-postadresse på rutgers.edu - Startside

2D material NV centers in diamond Superconductivity Fractional quantum Hall effect


Tittel Sorter etter sitater Sorter etter år Sorter etter tittel	Sitert av Sitert av	År
Tuning superconductivity in twisted bilayer graphene M Yankowitz, S Chen, H Polshyn, Y Zhang, K Watanabe, T Taniguchi, ... Science 363 (6431), 1059-1064, 2019	2254	2019
Maximized electron interactions at the magic angle in twisted bilayer graphene A Kerelsky, LJ McGilly, DM Kennes, L Xian, M Yankowitz, S Chen, ... Nature 572 (7767), 95-100, 2019	936	2019
Fractional Chern insulators in magic-angle twisted bilayer graphene Y Xie, AT Pierce, JM Park, DE Parker, E Khalaf, P Ledwith, Y Cao, SH Lee, ... Nature 600 (7889), 439-443, 2021	426	2021
Large linear-in-temperature resistivity in twisted bilayer graphene H Polshyn, M Yankowitz, S Chen, Y Zhang, K Watanabe, T Taniguchi, ... Nature Physics 15 (10), 1011-1016, 2019	410	2019
Electron optics with pn junctions in ballistic graphene S Chen, Z Han, MM Elahi, KMM Habib, L Wang, B Wen, Y Gao, ... Science 353 (6307), 1522-1525, 2016	333	2016
Electrically tunable correlated and topological states in twisted monolayer–bilayer graphene S Chen, M He, YH Zhang, V Hsieh, Z Fei, K Watanabe, T Taniguchi, ... Nature Physics 17 (3), 374-380, 2021	294	2021
Unconventional sequence of correlated Chern insulators in magic-angle twisted bilayer graphene AT Pierce, Y Xie, JM Park, E Khalaf, SH Lee, Y Cao, DE Parker, ... Nature Physics 17 (11), 1210-1215, 2021	175	2021
Quantum metric nonlinear Hall effect in a topological antiferromagnetic heterostructure A Gao, YF Liu, JX Qiu, B Ghosh, T V. Trevisan, Y Onishi, C Hu, T Qian, ... Science 381 (6654), 181-186, 2023	165	2023
Even denominator fractional quantum Hall state in bilayer graphene JIA Li, C Tan, S Chen, Y Zeng, T Taniguchi, K Watanabe, J Hone, ... science 358 (6363), 648-652, 2017	161	2017
Moiré metrology of energy landscapes in van der Waals heterostructures D Halbertal, NR Finney, SS Sunku, A Kerelsky, C Rubio-Verdú, ... Nature communications 12 (1), 242, 2021	92	2021
Graphene/GaN diodes for ultraviolet and visible photodetectors F Lin, SW Chen, J Meng, G Tse, XW Fu, FJ Xu, B Shen, ZM Liao, DP Yu Applied Physics Letters 105 (7), 2014	91	2014
Remote phonon and impurity screening effect of substrate and gate dielectric on electron dynamics in single layer MoS2 L Zeng, Z Xin, S Chen, G Du, J Kang, X Liu Applied Physics Letters 103 (11), 2013	80	2013
Hyperbolic enhancement of photocurrent patterns in minimally twisted bilayer graphene SS Sunku, D Halbertal, T Stauber, S Chen, AS McLeod, A Rikhter, ... Nature communications 12 (1), 1641, 2021	54	2021
Competing Fractional Quantum Hall and Electron Solid Phases in Graphene S Chen, R Ribeiro-Palau, K Yang, K Watanabe, T Taniguchi, J Hone, ... Physical Review Letters 122 (2), 026802, 2019	45	2019
High-Quality Electrostatically Defined Hall Bars in Monolayer Graphene R Ribeiro-Palau, S Chen, Y Zeng, K Watanabe, T Taniguchi, J Hone, ... Nano letters 19 (4), 2583-2587, 2019	35	2019
Unusual magnetotransport in twisted bilayer graphene J Finney, AL Sharpe, EJ Fox, CL Hsueh, DE Parker, M Yankowitz, S Chen, ... Proceedings of the National Academy of Sciences 119 (16), e2118482119, 2022	31	2022
High performance tunnel field-effect transistor by gate and source engineering R Huang, Q Huang, S Chen, C Wu, J Wang, X An, Y Wang Nanotechnology 25 (50), 505201, 2014	18	2014
Current induced hidden states in Josephson junctions S Chen, S Park, U Vool, N Maksimovic, DA Broadway, M Flaks, TX Zhou, ... Nature Communications 15 (1), 8059, 2024	11	2024
Source doping profile design for Si and Ge tunnel FET S Chen, Q Huang, R Huang ECS Transactions 60 (1), 91, 2014	11	2014
Device physics and design of T-gate Schottky barrier tunnel FET with adaptive operation mechanism Q Huang, R Huang, S Chen, J Wu, Z Zhan, Y Qiu, Y Wang Semiconductor Science and Technology 29 (9), 095013, 2014	9	2014

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