Field effect transistor manufacturing method H Yabuta, M Sano, T Iwasaki, H Hosono, T Kamiya, K Nomura
US Patent 7,829,444, 2010
3862 2010 Oxide semiconductor thin film transistor and method of manufacturing the same H Yabuta
US Patent App. 11/511,263, 2007
3815 2007 Method of fabricating oxide semiconductor device N Kaji, H Yabuta
US Patent 7,468,304, 2008
3813 2008 High-mobility thin-film transistor with amorphous H Yabuta, M Sano, K Abe, T Aiba, T Den, H Kumomi, K Nomura, T Kamiya, ...
Applied physics letters 89 (11), 112123, 2006
1450 2006 42.1: Invited Paper : Improved Amorphous In‐Ga‐Zn‐O TFTs R Hayashi, A Sato, M Ofuji, K Abe, H Yabuta, M Sano, H Kumomi, ...
SID Symposium Digest of Technical Papers 39 (1), 621-624, 2008
684 2008 Oxide semiconductor device including insulating layer and display apparatus using the same A Sato, R Hayashi, H Yabuta, T Watanabe
US Patent 8,502,217, 2013
308 2013 Bottom gate type thin film transistor, method of manufacturing the same, and display apparatus R Hayashi, N Kaji, H Yabuta
US Patent 8,148,721, 2012
305 2012 Method for manufacturing thin film transistor using oxide semiconductor and display apparatus H Omura, R Hayashi, N Kaji, H Yabuta
US Patent 8,143,115, 2012
278 2012 Sputtering formation of H Yabuta, N Kaji, R Hayashi, H Kumomi, K Nomura, T Kamiya, M Hirano, ...
Applied Physics Letters 97 (7), 072111, 2010
260 2010 Thin-film transistor and method of manufacturing same N Kaji, R Hayashi, H Yabuta, K Abe
US Patent 9,153,703, 2015
233 2015 Bottom gate type thin film transistor, method of manufacturing the same, and display apparatus R Hayashi, N Kaji, H Yabuta
US Patent App. 13/419,417, 2012
201 2012 Method for manufacturing field-effect transistor R Hayashi, H Yabuta, Y Tateishi, N Kaji
US Patent 8,110,436, 2012
180 2012 (Ba+Sr)/Ti ratio dependence of the dielectric properties for (Ba0.5 Sr0.5 )TiO3 thin films prepared by ion beam sputtering S Yamamichi, H Yabuta, T Sakuma, Y Miyasaka
Applied physics letters 64 (13), 1644-1646, 1994
170 1994 Thin film transistor and method of manufacturing the same A Sato, R Hayashi, H Yabuta, M Sano
US Patent 8,445,902, 2013
146 2013 Circuits using uniform TFTs based on amorphous In‐Ga‐Zn‐O R Hayashi, M Ofuji, N Kaji, K Takahashi, K Abe, H Yabuta, M Sano, ...
Journal of the Society for Information Display 15 (11), 915-921, 2007
141 2007 Thin film transistor, method of manufacturing the same, and display apparatus R Hayashi, N Kaji, H Yabuta
US Patent 9,905,699, 2018
123 2018 Structural, dielectric, and piezoelectric properties of Mn-doped BaTiO3–Bi (Mg1/2Ti1/2) O3–BiFeO3 ceramics I Fujii, R Mitsui, K Nakashima, N Kumada, M Shimada, T Watanabe, ...
Japanese journal of applied physics 50 (9S2), 09ND07, 2011
106 2011 Top gate thin film transistor and display apparatus including the same A Sato, H Kumomi, H Yabuta, R Hayashi, Y Takai
US Patent 8,624,240, 2014
105 2014 Materials, devices, and circuits of transparent amorphous-oxide semiconductor H Kumomi, S Yaginuma, H Omura, A Goyal, A Sato, M Watanabe, ...
Journal of Display Technology 5 (12), 531-540, 2009
89 2009 Field effect transistor manufacturing method H Yabuta, M Sano, T Iwasaki, H Hosono, T Kamiya, K Nomura
US Patent App. 12/824,568, 2010
66 2010 
Toshio KamiyaTokyo Institute of TechnologyVerifisert e-postadresse på msl.titech.ac.jp
