| Incorporating bottom-up approach into device/circuit co-design for SRAM-based cache memory applications S Tayal, B Smaani, SB Rahi, AK Upadhyay, S Bhattacharya, J Ajayan, ... IEEE Transactions on Electron Devices 69 (11), 6127-6132, 2022 | 33 | 2022 |
| Compact drain-current model for undoped cylindrical surrounding-gate metal-oxide-semiconductor field effect transistors including short channel effects B Smaani, S Latreche, B Iñiguez Journal of Applied Physics 114 (22), 224507, 2013 | 23 | 2013 |
| Analytical Compact Model of Nanowire Junctionless Gate-All-Around MOSFET Implemented in Verilog-A for Circuit Simulation B Smaani, SB Rahi, S Labiod Silicon 14, 10967–10976, 2022 | 16 | 2022 |
| Impact of the self-heating effect on nanosheet field effect transistor performance B Smaani, N Paras, SB Rahi, YS Song, R Yadav, S Tayal ECS Journal of Solid State Science and Technology 12 (2), 021005, 2023 | 11 | 2023 |
| Double-gate MOSFET model implemented in VerilogAMS language for the transient simulation and the configuration of ultra low-power analog circuits Billel Smaani, Yacin Meraihi, Fares Nafa, Mohamed Salah Benlatreche, Hamza ... International Journal of Electronics and Telecommunications 67 (4), 609-614, 2021 | 6 | 2021 |
| Analytical Drain-Current Model and Surface-Potential Calculation for Junctionless Cylindrical Surrounding-Gate MOSFETs Billel Smaani, Samir Labiod, Fares Nafa, Mohamed Salah Benlatreche, Saida ... International Journal of Circuits, Systems and Signal Processing 15, 1394-1399, 2021 | 5 | 2021 |
| Experimentally verified drain‐current model for variable barrier transistor O Moldovan, F Lime, S Barraud, B Smaani, S Latreche, B Iñiguez Electronics letters 51 (17), 1364-1366, 2015 | 5 | 2015 |
| Device Circuit Co-Design Issues in FETs Shubham Tayal, Billel Smaani, Shiromani Balmukund Rahi, Samir Labiod, Zeinab ... CRC Press, 2023 | 4* | 2023 |
| Nanotechnology and Quantum Dot Lasers Husien Salama, Billel Smaani, Faouzi Nasri, Alain Tshipamba Journal of Computer Science and Technology Studies 5 (1), 45-51, 2023 | 4* | 2023 |
| Mixed‑Mode Optical/Electric Simulation of Silicon Lateral PIN Photodiode Using FDTD Method S Labiod, B Smaani, S Tayal, SB Rahi, H Sedrati, S Latreche Silicon 15, 1181–1191, 2022 | 4 | 2022 |
| Compact modeling of junctionless gate-all-around MOSFET for circuit simulation B Smaani, F Nafa, A Kumar, SL Upadhyay, S Balmukund, MSB Rahi, ... Device Circuit Co-Design Issues in FETs, 57, 2023 | 2* | 2023 |
| Adaptive wavelets sliding mode control for a class of second order underactuated mechanical systems F Nafa, A Boudouda, B Smaani Acta Polytechnica 61 (2), 350-363, 2021 | 2 | 2021 |
| Compact modeling of lightly doped nanoscale DG MOSFET transistor B Smaani, M Bella, S Latreche Applied Mechanics and Materials 492, 306-310, 2014 | 2 | 2014 |
| SEM and AFM Characterizing the Roots Morphology of a ZnO (Sn) Thin Film Deposited on a Silicon Substrate by a Sol-Gel Spin Coating Process Amel Benbott, Mouhamed Salah Benlatreche, Billel Smaani,Ouafa Boukhemis ... Tobacco Regulatory Science (TRS), 1783-1792, 2023 | 1 | 2023 |
| Investigating the behavior of arsenic during silicide formation using scanning electron microscopy (SEM), Rutherford backscatter spectrometry (RBS) and secondary ion mass … MS Benlatreche, O Tahar, B Smaani, O Boukhemis Psychology and Education 60 (2), 1173-1185, 2023 | 1 | 2023 |
| Numerical modeling of electrical/optical combination for the simulation of PIN photodiode S Labiod, B Smaani, S Latreche 2022 19th International Multi-Conference on Systems, Signals & Devices (SSD …, 2022 | 1 | 2022 |
| Analysis of the gate-to-channel capacitance variation for the tri-gate nanowire junctionless transistors B. Smaani, Y. Yakhelef, F. Nafa, M. S. Benlatreche, S. Latreche GLOBAL CONFERENCE on ENGINEERING RESEARCH (GLOBCER'21), 2021 | 1 | 2021 |
| Robust decoupled adaptive fuzzy sliding mode control for a class of underactuated mechanical systems F Nafa, A Boudouda, B Smaani Levrotto and Bella, 2021 | 1 | 2021 |
| Steady state performance improvement of state observer based drive systems under load variation conditions Y Yakhelef, M Boulouh, F Nafa, B Smaani, AK Zarat | 1 | 2021 |
| Numerical modeling of MOS transistor using implicit finite different-time domain method S Labiod, S Latreche, B Smali, MR Beghoul, C Gontrand 2012 24th International Conference on Microelectronics (ICM), 1-4, 2012 | 1 | 2012 |
