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Shehrin Sayed
Shehrin Sayed
TDK Headway Technologies, Inc.
Verifisert e-postadresse på headway.com - Startside
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Novel Spin–Orbit Torque Generation at Room Temperature in an All‐Oxide Epitaxial La0.7Sr0.3MnO3/SrIrO3 System
X Huang, S Sayed, J Mittelstaedt, S Susarla, S Karimeddiny, L Caretta, ...
Advanced Materials, 2008269, 2021
582021
Tunable charge to spin conversion in strontium iridate thin films
AS Everhardt, M DC, X Huang, S Sayed, TA Gosavi, Y Tang, CC Lin, ...
Phys. Rev. Materials 3, 051201(R), 2019
532019
Spin circuit representation for the spin hall effect
S Hong, S Sayed, S Datta
IEEE Transactions on Nanotechnology 15 (2), 225-236, 2016
432016
Multifunctional spin logic operations in graphene spin circuits
D Khokhriakov, S Sayed, AM Hoque, B Karpiak, B Zhao, S Datta, SP Dash
Physical Review Applied 18 (6), 064063, 2022
352022
Multi-Terminal Spin Valve on Channels with Spin-Momentum Locking
S Sayed, S Hong, S Datta
Scientific Reports 6 (35658), 2016
332016
Proposal of a Single Nano-Magnet Memory Device
S Sayed, S Hong, EE Marinero, S Datta
IEEE Electron Device Letters, 2017
252017
Spin Funneling for Enhanced Spin Injection into Ferromagnets
S Sayed, VQ Diep, KY Camsari, S Datta
Scientific Reports 6 (28868), 2016
252016
Transmission-Line Model for Materials with Spin-Momentum Locking
S Sayed, S Hong, S Datta
Phys. Rev. Applied 10, 054044, 2018
18*2018
Spin circuit model for 2D channels with spin-orbit coupling
S Hong, S Sayed, S Datta
Scientific reports 6 (1), 20325, 2016
182016
Multi-terminal spin valve in a strong Rashba channel exhibiting three resistance states
J Lee, H Kim, J Chang, SH Han, HC Koo, S Sayed, S Hong, S Datta
Scientific reports 8 (1), 3397, 2018
172018
Magnetic memory structures using electric-field controlled interlayer exchange coupling (IEC) for magnetization switching
S Salahuddin, S Sayed
US Patent 10,964,468, 2021
162021
Unified Framework for Charge-Spin Interconversion in Spin-Orbit Materials
S Sayed, S Hong, X Huang, L Caretta, AS Everhardt, R Ramesh, ...
Phys. Rev. Applied 15, 054004, 2021
132021
On the understanding of current-induced spin polarization of three-dimensional topological insulators
J Tian, S Hong, S Sayed, JS Lee, S Datta, N Samarth, YP Chen
Nature Communications 10, 1461, 2019
13*2019
A subthreshold swing model for thin-film fully depleted SOI four-gate transistors
S Sayed, MI Hossain, MZR Khan
IEEE Transactions on Electron Devices 59 (3), 854-857, 2012
132012
Compression of ECG signals exploiting correlation between ECG cycles
EMA Anas, MI Hossain, MS Afran, S Sayed
International Conference on Electrical & Computer Engineering (ICECE 2010 …, 2010
132010
Apparatus for spin injection enhancement and method of making the same
S Sayed, VQ Diep, KY Camsari, S Datta
US Patent 10,516,098, 2019
122019
Electrical Control of Effective Mass, Damping, and Stiffness of MEMS Devices
J Clark, O Misiats, S Sayed
IEEE Sensors Journal, 2016
122016
Analytical modeling of surface accumulation behavior of fully depleted SOI four gate transistors (G4-FETs)
S Sayed, MZR Khan
Solid-state electronics 81, 105-112, 2013
112013
Analytical expression of the three-dimensional potential distribution of a SOI four-gate transistor
S Sayed, MI Hossain, R Huq, MZR Khan
International Conference on Electrical & Computer Engineering (ICECE 2010 …, 2010
92010
Three dimensional modeling of SOI four gate transistors
S Sayed, MI Hossain, R Huq, MZR Khan
2010 IEEE Nanotechnology Materials and Devices Conference, 383-388, 2010
92010
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Artikler 1–20