Electrochemical random-access memory: recent advances in materials, devices, and systems towards neuromorphic computing H Kwak, N Kim, S Jeon, S Kim, J Woo
Nano Convergence 11 (1), 9, 2024
8 2024 Understanding rhythmic synchronization of oscillatory neural networks based on NbOx artificial neurons for edge detection HW Kim, S Jeon, H Kang, E Hong, N Kim, J Woo
IEEE Transactions on Electron Devices 70 (6), 3031-3036, 2023
5 2023 WOx channel engineering of Cu-ion-driven synaptic transistor array for low-power neuromorphic computing S Jeon, H Kang, H Kwak, K Noh, S Kim, N Kim, HW Kim, E Hong, S Kim, ...
Scientific Reports 13 (1), 22111, 2023
3 2023 Experimental Robust Spontaneous Synchronizations in Coupled NbO HW Kim, SY Kang, J Moon, N Kim, E Hong, S Jeon, S Jeon, J Woo
IEEE Transactions on Electron Devices, 2023
3 2023 Analysis of electro-chemical RAM synaptic array for energy-efficient weight update H Kang, N Kim, S Jeon, HW Kim, E Hong, S Kim, J Woo
Frontiers in Nanotechnology 4, 1034357, 2022
3 2022 Strategy to improve synaptic behavior of ion-actuated synaptic transistors—the use of ion blocking layer to improve state retention S Jeon, N Tessler, N Kim, E Hong, HW Kim, J Woo
Scientific Reports 14 (1), 5030, 2024
2 2024 Demonstration of Threshold Switching in Undoped SiO E Hong, HW Kim, H Choi, S Jeon, N Kim, J Woo
IEEE Transactions on Electron Devices, 2024
2 2024 Three-dimensional vertical structural electrochemical random access memory for high-density integrated synapse device H Kim, J Seo, S Cho, S Jeon, J Woo, D Lee
Scientific Reports 13 (1), 14325, 2023
2 2023 Hybrid Precision in Resistive Memory-Based Convolutional Kernel for Fault-Resilient Neuromorphic Systems S Jeon, E Hong, H Kang, HW Kim, N Kim, J Woo
IEEE Transactions on Electron Devices 70 (4), 1659-1663, 2023
2 2023 Convolutional kernel with PrCaMnOx-based resistive random-access memory for neuromorphic image processing E Hong, S Jeon, N Kim, HW Kim, H Kang, K Moon, J Woo
AIP Advances 13 (1), 2023
2 2023 Back-end-of-line Compatible Transistor With Ultrathin InZnO Channel Enabling Operations in Cryogenic Environments N Kim, H Park, J Jeong, HW Kim, E Hong, S Jeon, H Choi, Y Kim, J Woo
IEEE Electron Device Letters, 2024
1 2024 Dual Ferroelectric Stack of HfZrO J Jeong, H Park, N Kim, HW Kim, E Hong, H Choi, S Jeon, Y Kim, J Woo
IEEE Transactions on Electron Devices, 2024
1 2024 Effect of the number and distribution of Al2O3 atomic layer deposition cycles within HfO2 layer on ferroelectric characteristics H Park, J Jeong, HW Kim, E Hong, N Kim, S Jeon, Y Kim, H Choi, J Woo
Applied Physics Letters 124 (13), 2024
1 2024 Hf0.4 Zr0.6 O2 Thickness-Dependent Transfer Characteristics of Inx 1–x Oy J Jeong, H Park, J Kim, H Moon, H Choi, E Kim, S Jeon, Y Kim, J Woo
The Journal of Physical Chemistry Letters 15, 10258-10264, 2024
2024 Enhancing the Performance of Electrochemical RAM (ECRAM) through Modeling Guided Device Engineering N Tessler, S Jeon, J Woo
Electrochemical Society Meeting Abstracts 245, 1497-1497, 2024
2024 Linear Synaptic Weight Update in Selector-Less HfO₂ RRAM Using Al₂O₃ Built-In Resistor for Neuromorphic Computing Systems Y Kim, H Kim, S Jeon, HW Kim, E Hong, N Kim, H Choi, H Park, J Jeong, ...
IEEE Transactions on Electron Devices 71 (8), 4637-4643, 2024
2024 Linear Synaptic Weight Update in Selector-Less HfO Y Kim, H Kim, S Jeon, HW Kim, E Hong, N Kim, H Choi, H Park, J Jeong, ...
IEEE Transactions on Electron Devices, 2024
2024 Role of oxide barrier in a NbOx layer with noninert electrodes for high-yield threshold switching characteristics H Choi, HW Kim, E Hong, N Kim, S Jeon, Y Kim, J Woo
AIP Advances 14 (1), 2024
2024 