| Probabilistic computing using Cu0.1Te0.9/HfO2/Pt diffusive memristors KS Woo, J Kim, J Han, W Kim, YH Jang, CS Hwang Nature Communications 13 (1), 5762, 2022 | 69 | 2022 |
| Time-varying data processing with nonvolatile memristor-based temporal kernel YH Jang, W Kim, J Kim, KS Woo, HJ Lee, JW Jeon, SK Shim, J Han, ... Nature Communications 12 (1), 5727, 2021 | 67 | 2021 |
| Investigation of Optimum Deposition Conditions of Radio Frequency Reactive Magnetron Sputtering of Al0.7Sc0.3N Film with Thickness down to 20 nm SK Ryoo, KD Kim, HW Park, YB Lee, SH Lee, IS Lee, S Byun, D Shim, ... Advanced Electronic Materials 8 (11), 2200726, 2022 | 35 | 2022 |
| Graph analysis with multifunctional self‐rectifying memristive crossbar array YH Jang, J Han, J Kim, W Kim, KS Woo, J Kim, CS Hwang Advanced Materials 35 (10), 2209503, 2023 | 20 | 2023 |
| Spatiotemporal Data Processing with Memristor Crossbar Array‐Based Graph Reservoir YH Jang, SH Lee, J Han, W Kim, SK Shim, S Cheong, KS Woo, JK Han, ... Advanced Materials, 2309314, 2023 | 19 | 2023 |
| Memristors with tunable volatility for reconfigurable neuromorphic computing KS Woo, H Park, N Ghenzi, AA Talin, T Jeong, JH Choi, S Oh, YH Jang, ... ACS nano 18 (26), 17007-17017, 2024 | 10 | 2024 |
| A high-dimensional in-sensor reservoir computing system with optoelectronic memristors for high-performance neuromorphic machine vision YH Jang, JK Han, S Moon, SK Shim, J Han, S Cheong, SH Lee, ... Materials Horizons 11 (2), 499-509, 2024 | 10 | 2024 |
| Heterogeneous reservoir computing in second-order Ta 2 O 5/HfO 2 memristors N Ghenzi, TW Park, SS Kim, HJ Kim, YH Jang, KS Woo, CS Hwang Nanoscale Horizons 9 (3), 427-437, 2024 | 9 | 2024 |
| Double S‐Shaped Polarization – Voltage Curve and Negative Capacitance from Al2O3‐Hf0.5Zr0.5O2‐Al2O3 Triple‐Layer Structure HW Park, M Oh, IS Lee, S Byun, YH Jang, YB Lee, BY Kim, SH Lee, ... Advanced Functional Materials 33 (9), 2206637, 2023 | 9 | 2023 |
| Parallel Density‐Based Spatial Clustering with Dual‐Functional Memristive Crossbar Array S Cheong, DH Shin, SH Lee, YH Jang, T Park, J Han, SK Shim, YR Kim, ... Advanced Functional Materials 34 (8), 2309108, 2024 | 8 | 2024 |
| Fully CMOS‐Based p‐Bits with a Bistable Resistor for Probabilistic Computing J Kim, JK Han, HY Maeng, J Han, JW Jeon, YH Jang, KS Woo, YK Choi, ... Advanced Functional Materials 34 (22), 2307935, 2024 | 6 | 2024 |
| Understanding phase evolution of ferroelectric Hf 0.5 Zr 0.5 O 2 thin films with Al 2 O 3 and Y 2 O 3 inserted layers J Shin, H Seo, KH Ye, YH Jang, DS Kwon, J Lim, TK Kim, H Paik, H Song, ... Journal of Materials Chemistry C 12 (14), 5035-5046, 2024 | 6 | 2024 |
| A ternary gate-connected threshold switching thin-film transistor KS Woo, Y Lee, JK Han, TW Park, YH Jang, CS Hwang Applied Physics Letters 124 (15), 2024 | 3 | 2024 |
| Vertically Stackable Ovonic Threshold Switch Oscillator Using Atomic Layer Deposited Ge0.6Se0.4 Film for High-Density Artificial Neural Networks JW Jeon, B Park, YH Jang, SH Lee, S Jeon, J Han, SK Ryoo, KD Kim, ... ACS Applied Materials & Interfaces 16 (12), 15032-15042, 2024 | 3 | 2024 |
| Cross-Wired Memristive Crossbar Array for Effective Graph Data Analysis. YH Jang, J Han, SK Shim, S Cheong, SH Lee, JK Han, CS Hwang Advanced Materials, 2311040, 2023 | 3 | 2023 |
| Enhancing the Crystallization and Properties of the SrRuO3 Electrode Film Grown by Atomic-Layer-Deposited SrO and Pulsed-Chemical Vapor-Deposited RuO2 through Al Substitution J Lim, KH Ye, DS Kwon, H Seo, TK Kim, H Paik, JH Shin, H Song, ... ACS Applied Electronic Materials 5 (8), 4187-4197, 2023 | 3 | 2023 |
| 2Memristor‐1Capacitor Integrated Temporal Kernel for High‐Dimensional Data Mapping SK Shim, YH Jang, J Han, JW Jeon, DH Shin, YR Kim, JK Han, KS Woo, ... Small 20 (25), 2306585, 2024 | 2 | 2024 |
| Heterogeneous density-based clustering with a dual-functional memristive array DH Shin, S Cheong, SH Lee, YH Jang, T Park, J Han, SK Shim, YR Kim, ... Materials Horizons 11 (18), 4493-4506, 2024 | 2 | 2024 |
| Fabrication of Ultrathin Ferroelectric Al0.7Sc0.3N Films under Complementary‐Metal‐Oxide‐Semiconductor Compatible Conditions by using HfN0.4 Electrode SK Ryoo, KD Kim, W Choi, P Sriboriboon, S Heo, H Seo, YH Jang, ... Advanced Materials 37 (1), 2413295, 2025 | 1 | 2025 |
| Thresholding Computing with Heterogeneous Integration of Memristive Kernel with Metal‐Oxide‐Semiconductor Capacitor for Temporal Data Analysis SK Shim, K Lee, J Han, DH Shin, SH Lee, S Cheong, YH Jang, ... Advanced Materials 36 (50), 2410432, 2024 | 1 | 2024 |
Cheol Seong HwangProfessor, Department of Materials Science and Engineering, Seoul National UniversityVerifisert e-postadresse på snu.ac.kr