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Dr. Shiromani Balmukund Rahi
Dr. Shiromani Balmukund Rahi
Assistant Professor(Gautam Buddha University)&Associated-Researcher|(IIT Kanpur),|Editor|,|Reviewer|
Verifisert e-postadresse på iitk.ac.in - Startside
Tittel
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Heterogate junctionless tunnel field-effect transistor: future of low-power devices
SB Rahi, P Asthana, S Gupta
Journal of Computational Electronics 16, 30-38, 2017
742017
A review on emerging negative capacitance field effect transistor for low power electronics
SB Rahi, S Tayal, AK Upadhyay
Microelectronics Journal 116, 105242, 2021
632021
Temperature effect on hetero structure junctionless tunnel FET
SB Rahi, B Ghosh, B Bishnoi
Journal of semiconductors 36 (3), 034002, 2015
502015
Emerging low-power semiconductor devices: Applications for future technology nodes
S Tayal, AK Upadhyay, D Kumar, SB Rahi
CRC Press, 2022
432022
Recent progress on negative capacitance tunnel FET for low-power applications: Device perspective
AK Upadhyay, SB Rahi, S Tayal, YS Song
Microelectronics Journal 129, 105583, 2022
412022
High-k double gate junctionless tunnel FET with a tunable bandgap
SB Rahi, B Ghosh
RSC Advances 5 (67), 54544-54550, 2015
402015
Improved performance of a junctionless tunnel field effect transistor with a Si and SiGe heterostructure for ultra low power applications
PK Asthana, Y Goswami, S Basak, SB Rahi, B Ghosh
RSC Advances 5 (60), 48779-48785, 2015
402015
Identifying the moderating effect of trust on the adoption of cloud‐based services
SB Rahi, S Bisui, SC Misra
International Journal of Communication Systems 30 (11), e3253, 2017
362017
Optimal design for a high performance H-JLTFET using HfO 2 as a gate dielectric for ultra low power applications
PK Asthana, B Ghosh, SBM Rahi, Y Goswami
RSC Advances 4 (43), 22803-22807, 2014
342014
Incorporating bottom-up approach into device/circuit co-design for SRAM-based cache memory applications
S Tayal, B Smaani, SB Rahi, AK Upadhyay, S Bhattacharya, J Ajayan, ...
IEEE Transactions on Electron Devices 69 (11), 6127-6132, 2022
332022
A simulation-based proposed high-k heterostructure AlGaAs/Si junctionless n-type tunnel FET
SB Rahi, B Ghosh, P Asthana
Journal of semiconductors 35 (11), 114005, 2014
322014
Low power circuit and system design hierarchy and thermal reliability of tunnel field effect transistor
G Naima, SB Rahi
Silicon, 1-11, 2021
242021
Rigorous study of double gate tunneling field effect transistor structure based on silicon
N Guenifi, SB Rahi, T Ghodbane
Materials Focus 7 (6), 866-872, 2018
232018
Identifying critical challenges in the adoption of cloud‐based services
SB Rahi, S Bisui, SC Misra
International Journal of Communication Systems 30 (12), e3261, 2017
232017
Intelligent green technologies for sustainable smart cities
SL Tripathi, S Ganguli, A Kumar, T Magradze
John Wiley & Sons, 2022
222022
Thermal-aware IC chip design by combining high thermal conductivity materials and GAA MOSFET
YS Song, S Tayal, SB Rahi, JH Kim, AK Upadhyay, BG Park
2022 5th international conference on circuits, systems and simulation (ICCSS …, 2022
212022
Suppression of Ambipolar Current and Analysis of RF Performance in Double Gate Tunneling Field Effect Transistors for Low-Power Applications
SBRML N Guenifi
International Journal of Nanoparticles and Nanotechnology 6 (1), 1-12, 2020
212020
Performance evaluation of gate engineered InAs–Si heterojunction surrounding gate TFET
M Sathishkumar, TSA Samuel, K Ramkumar, IV Anand, SB Rahi
Superlattices and Microstructures 162, 107099, 2022
192022
Analytical compact model of nanowire junctionless gate-all-around MOSFET implemented in verilog-a for circuit simulation
B Smaani, SB Rahi, S Labiod
Silicon 14 (16), 10967-10976, 2022
162022
Factors influencing the success of cloud adoption in the semiconductor industry
SC Misra, SB Rahi, S Bisui, A Singh
Software Quality Professional 21 (2), 38-51, 2019
162019
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